Dislocations in dendritic web silicon (2000)
- Authors:
- Autor USP: MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- Assunto: CRISTALOGRAFIA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Crystal Growth
- ISSN: 0022-0248
- Volume/Número/Paginação/Ano: v. 213, n. 3-4, p. 288-298, 2000
-
ABNT
MORELHÃO, Sérgio Luiz e HARTWIG, J e MEIER, D L. Dislocations in dendritic web silicon. Journal of Crystal Growth, v. 213, n. 3-4, p. 288-298, 2000Tradução . . Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v213i3-4&article=288_didws&form=pdf&file=file.pdf. Acesso em: 06 fev. 2026. -
APA
Morelhão, S. L., Hartwig, J., & Meier, D. L. (2000). Dislocations in dendritic web silicon. Journal of Crystal Growth, 213( 3-4), 288-298. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v213i3-4&article=288_didws&form=pdf&file=file.pdf -
NLM
Morelhão SL, Hartwig J, Meier DL. Dislocations in dendritic web silicon [Internet]. Journal of Crystal Growth. 2000 ; 213( 3-4): 288-298.[citado 2026 fev. 06 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v213i3-4&article=288_didws&form=pdf&file=file.pdf -
Vancouver
Morelhão SL, Hartwig J, Meier DL. Dislocations in dendritic web silicon [Internet]. Journal of Crystal Growth. 2000 ; 213( 3-4): 288-298.[citado 2026 fev. 06 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v213i3-4&article=288_didws&form=pdf&file=file.pdf - Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors
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