A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC (2001)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: SBMicro 2001: proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
BELLODI, Marcello et al. A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 23 jan. 2026. -
APA
Bellodi, M., Iniguez, B., Flandre, D., & Martino, J. A. (2001). A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC. In SBMicro 2001: proceedings. Brasília: SBMicro. -
NLM
Bellodi M, Iniguez B, Flandre D, Martino JA. A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC. SBMicro 2001: proceedings. 2001 ;[citado 2026 jan. 23 ] -
Vancouver
Bellodi M, Iniguez B, Flandre D, Martino JA. A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC. SBMicro 2001: proceedings. 2001 ;[citado 2026 jan. 23 ] - Analog circuit design using graded-channel SOI NMOSFETs
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