Improved current mirror output performance by using graded-channel SOI nMOSFETs (2001)
- Authors:
- USP affiliated authors: MARTINO, JOAO ANTONIO - EP
- Unidades: EP
- Subjects: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: SBMicro 2001: proceedings
- Conference title: International Conference on Microelectronics and Packaging
-
ABNT
PAVANELLO, Marcelo Antonio; MARTINO, João Antonio; FLANDRE, Denis. Improved current mirror output performance by using graded-channel SOI nMOSFETs. Anais.. Brasília: SBMicro, 2001. -
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2001). Improved current mirror output performance by using graded-channel SOI nMOSFETs. In SBMicro 2001: proceedings. Brasília: SBMicro. -
NLM
Pavanello MA, Martino JA, Flandre D. Improved current mirror output performance by using graded-channel SOI nMOSFETs. SBMicro 2001: proceedings. 2001 ; -
Vancouver
Pavanello MA, Martino JA, Flandre D. Improved current mirror output performance by using graded-channel SOI nMOSFETs. SBMicro 2001: proceedings. 2001 ; - Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- Combined l and series resistance extraction of ldd mosfets
- New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets
- Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
- Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence
- Sistema endereçável de detecção e controle. (também em CD-Rom)
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