Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime (2001)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: SBMicro 2001: proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
GIMENEZ, Salvador Pinillos e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 23 jan. 2026. -
APA
Gimenez, S. P., Pavanello, M. A., & Martino, J. A. (2001). Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime. In SBMicro 2001: proceedings. Brasília: SBMicro. -
NLM
Gimenez SP, Pavanello MA, Martino JA. Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime. SBMicro 2001: proceedings. 2001 ;[citado 2026 jan. 23 ] -
Vancouver
Gimenez SP, Pavanello MA, Martino JA. Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime. SBMicro 2001: proceedings. 2001 ;[citado 2026 jan. 23 ] - Analog circuit design using graded-channel SOI NMOSFETs
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