Interference effects in nonplanar wires with a two-dimensional electron gas (1999)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; GOUSSEV, GUENNADII MICHAILOVICH - IF
- Unidades: IFSC; IF
- Subjects: MATÉRIA CONDENSADA; FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
-
ABNT
BASMAJI, Pierre et al. Interference effects in nonplanar wires with a two-dimensional electron gas. . São Paulo: IFUSP. Disponível em: http://publica-sbi.if.usp.br/PDFs/pd1370.pdf. Acesso em: 27 jan. 2026. , 1999 -
APA
Basmaji, P., Gusev, G. M., Gonzales-Borrero, P. P., Lubyshev, D. I., Silva, M. P. A. da, La Scala Junior, N., et al. (1999). Interference effects in nonplanar wires with a two-dimensional electron gas. São Paulo: IFUSP. Recuperado de http://publica-sbi.if.usp.br/PDFs/pd1370.pdf -
NLM
Basmaji P, Gusev GM, Gonzales-Borrero PP, Lubyshev DI, Silva MPA da, La Scala Junior N, Maude DK, Portal JC. Interference effects in nonplanar wires with a two-dimensional electron gas [Internet]. 1999 ;[citado 2026 jan. 27 ] Available from: http://publica-sbi.if.usp.br/PDFs/pd1370.pdf -
Vancouver
Basmaji P, Gusev GM, Gonzales-Borrero PP, Lubyshev DI, Silva MPA da, La Scala Junior N, Maude DK, Portal JC. Interference effects in nonplanar wires with a two-dimensional electron gas [Internet]. 1999 ;[citado 2026 jan. 27 ] Available from: http://publica-sbi.if.usp.br/PDFs/pd1370.pdf - Evidence of localized luminescence centers in porous silicon
- Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy
- Luminescence degradation and fatigue effects in porous silicon
- Ion incorporation and exchange effects in porous silicon
- Optical absorption in porous silicon of high porosity
- Formacao natural de pontos quanticos
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Capacitance-voltage characterization of InAs and InGaAs quantum dots
- Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'
- Low dimensional quantum structures grown by molecular beam epitaxy
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