Influence of plasma etching on Raman spectra of DLC films deposited by magnetron sputtering (1999)
- Authors:
- USP affiliated authors: MANSANO, RONALDO DOMINGUES - EP ; VERDONCK, PATRICK BERNARD - EP ; MACIEL, HOMERO SANTIAGO - EP ; MASSI, MARCOS - EP
- Unidade: EP
- Assunto: ENGENHARIA ELÉTRICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia Eletrônica
- ISSN: 1413-2206
- Volume/Número/Paginação/Ano: n.41, 1999
-
ABNT
MASSI, Marcos et al. Influence of plasma etching on Raman spectra of DLC films deposited by magnetron sputtering. Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia Eletrônica, n. 41, 1999Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/fa947f7e-177c-4df9-8496-d89415d67262/BT-PEE-99_41_250911_082721.pdf. Acesso em: 15 fev. 2026. -
APA
Massi, M., Mansano, R. D., Maciel, H. S., Otani, C., Verdonck, P. B., & Nishioka, L. N. B. M. (1999). Influence of plasma etching on Raman spectra of DLC films deposited by magnetron sputtering. Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia Eletrônica, (41). Recuperado de https://repositorio.usp.br/directbitstream/fa947f7e-177c-4df9-8496-d89415d67262/BT-PEE-99_41_250911_082721.pdf -
NLM
Massi M, Mansano RD, Maciel HS, Otani C, Verdonck PB, Nishioka LNBM. Influence of plasma etching on Raman spectra of DLC films deposited by magnetron sputtering [Internet]. Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia Eletrônica. 1999 ;(41):[citado 2026 fev. 15 ] Available from: https://repositorio.usp.br/directbitstream/fa947f7e-177c-4df9-8496-d89415d67262/BT-PEE-99_41_250911_082721.pdf -
Vancouver
Massi M, Mansano RD, Maciel HS, Otani C, Verdonck PB, Nishioka LNBM. Influence of plasma etching on Raman spectra of DLC films deposited by magnetron sputtering [Internet]. Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia Eletrônica. 1999 ;(41):[citado 2026 fev. 15 ] Available from: https://repositorio.usp.br/directbitstream/fa947f7e-177c-4df9-8496-d89415d67262/BT-PEE-99_41_250911_082721.pdf - The applicability of Langmuir probes for end point detection of polymer etching
- Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications
- End-point detection of polymer etching using Langmuir probes
- Performance characterization of an RIE reactor with built-in RF excitation antenna
- Characteristics of silicon etching processes in a RIE reactor modified to include a built-in radio frequency excitation coil. (em CD-Rom)
- Anisotropic reactive ion etching in silicon, using a graphite electrode
- Effects of plasma etching on DLC films
- Electrical and structural characterization of DLC films deposited by magnetron sputtering
- Silicon surface roughness induced by reactive ion etching processes, using a graphite electrode. (Em CD-Rom)
- Electrical and structural characterisation of DLC films deposited by magnetron sputtering
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 |
BT-PEE-99_41_250911_08272... | Direct link |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
