New empirical model for leakage drain current of soi mosfets valid from room to high temperatures (1996)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Solid-State Devices and Circuits
- Volume/Número/Paginação/Ano: v.4 , n.1 , p.7-10, jan. 1996
-
ABNT
BELLODI, Marcello e MARTINO, João Antonio e FLANDRE, Denis. New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits, v. 4 , n. ja 1996, p. 7-10, 1996Tradução . . Acesso em: 29 jan. 2026. -
APA
Bellodi, M., Martino, J. A., & Flandre, D. (1996). New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits, 4 ( ja 1996), 7-10. -
NLM
Bellodi M, Martino JA, Flandre D. New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 7-10.[citado 2026 jan. 29 ] -
Vancouver
Bellodi M, Martino JA, Flandre D. New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 7-10.[citado 2026 jan. 29 ] - Analog circuit design using graded-channel SOI NMOSFETs
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- Projeto de um processo CMOS com cavidade dupla e dimensões de porta de 2 um
- Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time
- Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation
- Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results
- Estudo comparativo de estruturas de fonte e dreno de transistores mos submicrometricos
- Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices
- Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs
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