Transient effects in accumulation mode p-channel soi - mosfets operating at 77k (1994)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Ieee Transactions on Electron Devices
- Volume/Número/Paginação/Ano: v.41, n.4 , p.519-23, apr. 1994
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ABNT
MARTINO, João Antonio et al. Transient effects in accumulation mode p-channel soi - mosfets operating at 77k. Ieee Transactions on Electron Devices, v. 41, n. 4 , p. 519-23, 1994Tradução . . Acesso em: 19 set. 2024. -
APA
Martino, J. A., Rotondaro, A. L. P., Simoen, E., Magnusson, U., & Claeys, C. (1994). Transient effects in accumulation mode p-channel soi - mosfets operating at 77k. Ieee Transactions on Electron Devices, 41( 4 ), 519-23. -
NLM
Martino JA, Rotondaro ALP, Simoen E, Magnusson U, Claeys C. Transient effects in accumulation mode p-channel soi - mosfets operating at 77k. Ieee Transactions on Electron Devices. 1994 ;41( 4 ): 519-23.[citado 2024 set. 19 ] -
Vancouver
Martino JA, Rotondaro ALP, Simoen E, Magnusson U, Claeys C. Transient effects in accumulation mode p-channel soi - mosfets operating at 77k. Ieee Transactions on Electron Devices. 1994 ;41( 4 ): 519-23.[citado 2024 set. 19 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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