Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures (1994)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; SHIBLI, SUHAILA MALUF - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher place: Swizerland
- Date published: 1994
- Source:
- Título: Materials Science Forum
- Volume/Número/Paginação/Ano: v.143-7, p.669-74, 1994
-
ABNT
SCOLFARO, L M R et al. Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures. Materials Science Forum, v. 143-7, p. 669-74, 1994Tradução . . Acesso em: 08 out. 2024. -
APA
Scolfaro, L. M. R., Leite, J. R., Mendonca, C. A. C., Beliaev, D., Shibli, S. M., Silva, E. C. F., & Meneses, E. A. (1994). Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures. Materials Science Forum, 143-7, 669-74. -
NLM
Scolfaro LMR, Leite JR, Mendonca CAC, Beliaev D, Shibli SM, Silva ECF, Meneses EA. Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures. Materials Science Forum. 1994 ;143-7 669-74.[citado 2024 out. 08 ] -
Vancouver
Scolfaro LMR, Leite JR, Mendonca CAC, Beliaev D, Shibli SM, Silva ECF, Meneses EA. Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures. Materials Science Forum. 1994 ;143-7 669-74.[citado 2024 out. 08 ] - Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy
- Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS'
- Theory of luminescence spectra 'delta'-doping structures: application to GaAs
- Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers
- Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells
- Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures
- Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells
- Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers
- Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
