Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells (1994)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Superlattices and Microstrutuctures
- Volume/Número/Paginação/Ano: v.15, n.3 , p.333-7, 1994
-
ABNT
CESCHIN, A M et al. Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells. Superlattices and Microstrutuctures, v. 15, n. 3 , p. 333-7, 1994Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/ddb56a0a-6c7c-47e5-bbbd-d752c8d5af5f/1-s2.0-S0749603684710652-main.pdf. Acesso em: 17 mar. 2026. -
APA
Ceschin, A. M., Quivy, A. A., Soares, J. A. N. T., Enderlein, R., Tabata, A., Scolfaro, L. M. R., et al. (1994). Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells. Superlattices and Microstrutuctures, 15( 3 ), 333-7. Recuperado de https://repositorio.usp.br/directbitstream/ddb56a0a-6c7c-47e5-bbbd-d752c8d5af5f/1-s2.0-S0749603684710652-main.pdf -
NLM
Ceschin AM, Quivy AA, Soares JANT, Enderlein R, Tabata A, Scolfaro LMR, Silva ECF da, Leite JR, Oliveira JBB, Meneses EA. Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells [Internet]. Superlattices and Microstrutuctures. 1994 ;15( 3 ): 333-7.[citado 2026 mar. 17 ] Available from: https://repositorio.usp.br/directbitstream/ddb56a0a-6c7c-47e5-bbbd-d752c8d5af5f/1-s2.0-S0749603684710652-main.pdf -
Vancouver
Ceschin AM, Quivy AA, Soares JANT, Enderlein R, Tabata A, Scolfaro LMR, Silva ECF da, Leite JR, Oliveira JBB, Meneses EA. Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells [Internet]. Superlattices and Microstrutuctures. 1994 ;15( 3 ): 333-7.[citado 2026 mar. 17 ] Available from: https://repositorio.usp.br/directbitstream/ddb56a0a-6c7c-47e5-bbbd-d752c8d5af5f/1-s2.0-S0749603684710652-main.pdf - Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells
- Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers
- Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers
- Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers
- Theory of luminescence spectra 'delta'-doping structures: application to GaAs
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
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