Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers (1999)
- Authors:
- Levine, A.
- Silva, Euzi Conceicao Fernandes da
- Sipahi, Guilherme Matos
- Quivy, A. A.
- Scolfaro, Luisa Maria Ribeiro
- Leite, J. R.
- Dias, I. F. L.
- Lauretto, E.
- Oliveira, J. B. B. - Universidade Estadual de Campinas (UNICAMP)
- Meneses, E. A. - Universidade Estadual de Campinas (UNICAMP)
- Oliveira, A. G. - Universidade Federal de Minas Gerais (UFMG)
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1103/physrevb.59.4634
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review B
- ISSN: 0163-1829
- Volume/Número/Paginação/Ano: v. 59, n. 7, p. 4634-4637, 1999
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
LEVINE, A. et al. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers. Physical Review B, v. 59, n. 7, p. 4634-4637, 1999Tradução . . Disponível em: https://doi.org/10.1103/physrevb.59.4634. Acesso em: 24 abr. 2024. -
APA
Levine, A., Silva, E. C. F. da, Sipahi, G. M., Quivy, A. A., Scolfaro, L. M. R., Leite, J. R., et al. (1999). Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers. Physical Review B, 59( 7), 4634-4637. doi:10.1103/physrevb.59.4634 -
NLM
Levine A, Silva ECF da, Sipahi GM, Quivy AA, Scolfaro LMR, Leite JR, Dias IFL, Lauretto E, Oliveira JBB, Meneses EA, Oliveira AG. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers [Internet]. Physical Review B. 1999 ; 59( 7): 4634-4637.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1103/physrevb.59.4634 -
Vancouver
Levine A, Silva ECF da, Sipahi GM, Quivy AA, Scolfaro LMR, Leite JR, Dias IFL, Lauretto E, Oliveira JBB, Meneses EA, Oliveira AG. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers [Internet]. Physical Review B. 1999 ; 59( 7): 4634-4637.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1103/physrevb.59.4634 - Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers
- Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells
- Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers
- Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
- Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
- Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
- Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers
- Theory of luminescence spectra 'delta'-doping structures: application to GaAs
Informações sobre o DOI: 10.1103/physrevb.59.4634 (Fonte: oaDOI API)
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