Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers (1999)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1103/physrevb.59.4634
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physical Review B
- ISSN: 0163-1829
- Volume/Número/Paginação/Ano: v. 59, n. 7, p. 4634-4637, 1999
- Status:
- Artigo possui versão em acesso aberto em repositório (Green Open Access)
- Versão do Documento:
- Versão publicada (Published version)
- Acessar versão aberta:
-
ABNT
LEVINE, Alexandre et al. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers. Physical Review B, v. 59, n. 7, p. 4634-4637, 1999Tradução . . Disponível em: https://doi.org/10.1103/physrevb.59.4634. Acesso em: 17 mar. 2026. -
APA
Levine, A., Silva, E. C. F. da, Sipahi, G. M., Quivy, A. A., Scolfaro, L. M. R., Leite, J. R., et al. (1999). Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers. Physical Review B, 59( 7), 4634-4637. doi:10.1103/physrevb.59.4634 -
NLM
Levine A, Silva ECF da, Sipahi GM, Quivy AA, Scolfaro LMR, Leite JR, Dias IFL, Lauretto E, Oliveira JBB, Meneses EA, Oliveira AG. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers [Internet]. Physical Review B. 1999 ; 59( 7): 4634-4637.[citado 2026 mar. 17 ] Available from: https://doi.org/10.1103/physrevb.59.4634 -
Vancouver
Levine A, Silva ECF da, Sipahi GM, Quivy AA, Scolfaro LMR, Leite JR, Dias IFL, Lauretto E, Oliveira JBB, Meneses EA, Oliveira AG. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers [Internet]. Physical Review B. 1999 ; 59( 7): 4634-4637.[citado 2026 mar. 17 ] Available from: https://doi.org/10.1103/physrevb.59.4634 - Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells
- Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers
- Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers
- Theory of luminescence spectra 'delta'-doping structures: application to GaAs
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
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