Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers (1998)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; QUÍMICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Superlattices and Microstructures
- Volume/Número/Paginação/Ano: v. 23, n. 2, p. 301-306, 1998
-
ABNT
LEVINE, A et al. Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers. Superlattices and Microstructures, v. 23, n. 2, p. 301-306, 1998Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/67d287aa-b1d5-4f32-b25b-33bb9ed40ccd/1-s2.0-S0749603696999929-main.pdf. Acesso em: 05 nov. 2024. -
APA
Levine, A., Silva, E. C. F. da, Scolfaro, L. M. R., Beliaev, D., Quivy, A. A., Enderlein, R., & Leite, J. R. (1998). Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers. Superlattices and Microstructures, 23( 2), 301-306. Recuperado de https://repositorio.usp.br/directbitstream/67d287aa-b1d5-4f32-b25b-33bb9ed40ccd/1-s2.0-S0749603696999929-main.pdf -
NLM
Levine A, Silva ECF da, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers [Internet]. Superlattices and Microstructures. 1998 ; 23( 2): 301-306.[citado 2024 nov. 05 ] Available from: https://repositorio.usp.br/directbitstream/67d287aa-b1d5-4f32-b25b-33bb9ed40ccd/1-s2.0-S0749603696999929-main.pdf -
Vancouver
Levine A, Silva ECF da, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers [Internet]. Superlattices and Microstructures. 1998 ; 23( 2): 301-306.[citado 2024 nov. 05 ] Available from: https://repositorio.usp.br/directbitstream/67d287aa-b1d5-4f32-b25b-33bb9ed40ccd/1-s2.0-S0749603696999929-main.pdf - Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells
- Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers
- Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers
- Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
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