Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells (1995)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Português
- Imprenta:
- Publisher: Sociedade Brasileira de Fisica
- Publisher place: São Paulo
- Date published: 1995
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
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ABNT
TABATA, A et al. Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells. 1995, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1995. . Acesso em: 17 mar. 2026. -
APA
Tabata, A., Ceschin, A. M., Scolfaro, L. M. R., Quivy, A. A., Silva, E. C. F. da, Enderlein, R., et al. (1995). Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells. In Resumos. São Paulo: Sociedade Brasileira de Fisica. -
NLM
Tabata A, Ceschin AM, Scolfaro LMR, Quivy AA, Silva ECF da, Enderlein R, Leite JR, Oliveira JBB, Laureto E, Meneses EA. Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells. Resumos. 1995 ;[citado 2026 mar. 17 ] -
Vancouver
Tabata A, Ceschin AM, Scolfaro LMR, Quivy AA, Silva ECF da, Enderlein R, Leite JR, Oliveira JBB, Laureto E, Meneses EA. Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells. Resumos. 1995 ;[citado 2026 mar. 17 ] - Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers
- Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers
- Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers
- Theory of luminescence spectra 'delta'-doping structures: application to GaAs
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
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