Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers (1996)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Fisica
- Publisher place: Sao Paulo
- Date published: 1996
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
-
ABNT
LEVINE, A et al. Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers. 1996, Anais.. Sao Paulo: Sociedade Brasileira de Fisica, 1996. . Acesso em: 08 out. 2024. -
APA
Levine, A., Silva, E. C. F., Scolfaro, L. M. R., Beliaev, D., Quivy, A. A., Enderlein, R., & Leite, J. R. (1996). Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers. In Resumos. Sao Paulo: Sociedade Brasileira de Fisica. -
NLM
Levine A, Silva ECF, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers. Resumos. 1996 ;[citado 2024 out. 08 ] -
Vancouver
Levine A, Silva ECF, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers. Resumos. 1996 ;[citado 2024 out. 08 ] - Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells
- Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers
- Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
