Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers (1996)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Fisica
- Publisher place: São Paulo
- Date published: 1996
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
-
ABNT
LEVINE, Alexandre et al. Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers. 1996, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1996. . Acesso em: 26 jan. 2026. -
APA
Levine, A., Silva, E. C. F. da, Scolfaro, L. M. R., Beliaev, D., Quivy, A. A., Enderlein, R., & Leite, J. R. (1996). Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers. In Resumos. São Paulo: Sociedade Brasileira de Fisica. -
NLM
Levine A, Silva ECF da, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers. Resumos. 1996 ;[citado 2026 jan. 26 ] -
Vancouver
Levine A, Silva ECF da, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers. Resumos. 1996 ;[citado 2026 jan. 26 ] - Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells
- Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers
- Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers
- Theory of luminescence spectra 'delta'-doping structures: application to GaAs
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates
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