Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells (1994)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Superlattices and Microstructures
- Volume/Número/Paginação/Ano: v.15, n.3 , p.333-7, 1994
- Conference titles: International Conference on Superlattices, Microructures and Microdevices
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ABNT
CESCHIN, A M et al. Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells. Superlattices and Microstructures. London: Instituto de Física, Universidade de São Paulo. . Acesso em: 14 out. 2024. , 1994 -
APA
Ceschin, A. M., Quivy, A. A., Soares, J. A. N. T., Enderlein, R., Tabata, A., Scolfaro, L. M. R., et al. (1994). Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells. Superlattices and Microstructures. London: Instituto de Física, Universidade de São Paulo. -
NLM
Ceschin AM, Quivy AA, Soares JANT, Enderlein R, Tabata A, Scolfaro LMR, Silva ECF, Leite JR, Oliveira JBB, Menezes EA. Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells. Superlattices and Microstructures. 1994 ;15( 3 ): 333-7.[citado 2024 out. 14 ] -
Vancouver
Ceschin AM, Quivy AA, Soares JANT, Enderlein R, Tabata A, Scolfaro LMR, Silva ECF, Leite JR, Oliveira JBB, Menezes EA. Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells. Superlattices and Microstructures. 1994 ;15( 3 ): 333-7.[citado 2024 out. 14 ] - Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells
- Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers
- Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers
- Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers
- Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
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