Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy (1993)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; HENRIQUES, ANDRE BOHOMOLETZ - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; SHIBLI, SUHAILA MALUF - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Crystal Growth
- Volume/Número/Paginação/Ano: v.127, p.700-2, 1993
-
ABNT
SHIBLI, S M et al. Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth, v. 127, p. 700-2, 1993Tradução . . Acesso em: 19 abr. 2024. -
APA
Shibli, S. M., Henriques, A. B., Mendonca, C. A. C., Da Silva, E. C. F., Meneses, E. A., Scolfaro, L. M. R., & Leite, J. R. (1993). Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth, 127, 700-2. -
NLM
Shibli SM, Henriques AB, Mendonca CAC, Da Silva ECF, Meneses EA, Scolfaro LMR, Leite JR. Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth. 1993 ;127 700-2.[citado 2024 abr. 19 ] -
Vancouver
Shibli SM, Henriques AB, Mendonca CAC, Da Silva ECF, Meneses EA, Scolfaro LMR, Leite JR. Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth. 1993 ;127 700-2.[citado 2024 abr. 19 ] - Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures
- Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers
- Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS'
- Theory of luminescence spectra 'delta'-doping structures: application to GaAs
- Transporte quantico por minibandas em super-redes semicondutoras dopadas
- Fermi surface study of spike doped 'GA''AS' superlattices
- Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells
- Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures
- Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells
- Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers
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