Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures (1993)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; SHIBLI, SUHAILA MALUF - IF ; DMITRI BELIAEV - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physical Review B
- Volume/Número/Paginação/Ano: v.48, n.16, p.12316, out. 1993
-
ABNT
MENDONCA, C A C et al. Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures. Physical Review B, v. 48, n. 16, p. 12316, 1993Tradução . . Acesso em: 25 jan. 2026. -
APA
Mendonca, C. A. C., Plentz, F., Oliveira, J. B. B., Meneses, E. A., Scolfaro, L. M. R., Beliaev, D., et al. (1993). Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures. Physical Review B, 48( 16), 12316. -
NLM
Mendonca CAC, Plentz F, Oliveira JBB, Meneses EA, Scolfaro LMR, Beliaev D, Shibli SM, Leite JR. Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures. Physical Review B. 1993 ;48( 16): 12316.[citado 2026 jan. 25 ] -
Vancouver
Mendonca CAC, Plentz F, Oliveira JBB, Meneses EA, Scolfaro LMR, Beliaev D, Shibli SM, Leite JR. Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures. Physical Review B. 1993 ;48( 16): 12316.[citado 2026 jan. 25 ] - Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS'
- Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers
- Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures
- Influência da distribuição espacial do campo eletrico na forma de espectros da fotorefletancia
- Propriedades eletronicas de super-redes com dopagem planar e de heteroestruturas epitaxiais
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic structure and stability of Be impurities in cubic boron nitride
- Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
- Light emission process in GaN/InGaN/GaN quantum wells
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