Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS' (1992)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; SHIBLI, SUHAILA MALUF - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Applied Physics Letters
- Volume/Número/Paginação/Ano: v.60, n.23, p.2895, jun. 1992
-
ABNT
SHIBLI, Suhaila Maluf e SCOLFARO, L M R e LEITE, J. R. Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS'. Applied Physics Letters, v. 60, n. ju 1992, p. 2895, 1992Tradução . . Acesso em: 26 jan. 2026. -
APA
Shibli, S. M., Scolfaro, L. M. R., & Leite, J. R. (1992). Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS'. Applied Physics Letters, 60( ju 1992), 2895. -
NLM
Shibli SM, Scolfaro LMR, Leite JR. Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS'. Applied Physics Letters. 1992 ;60( ju 1992): 2895.[citado 2026 jan. 26 ] -
Vancouver
Shibli SM, Scolfaro LMR, Leite JR. Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS'. Applied Physics Letters. 1992 ;60( ju 1992): 2895.[citado 2026 jan. 26 ] - Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers
- Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures
- Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic structure and stability of Be impurities in cubic boron nitride
- Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
- Light emission process in GaN/InGaN/GaN quantum wells
- Dynamical properties of III-nitrides
- Reduction or suppression of spinodal phase separation in cubic 'In IND.X' 'Ga IND.1-X''N' alloys: the role of the biaxial strain
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