Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS' (1992)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; SHIBLI, SUHAILA MALUF - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Applied Physics Letters
- Volume/Número/Paginação/Ano: v.60, n.23, p.2895, jun. 1992
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ABNT
SHIBILI, S M e SCOLFARO, L M R e LEITE, J. R. Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS'. Applied Physics Letters, v. 60, n. ju 1992, p. 2895, 1992Tradução . . Acesso em: 24 jul. 2024. -
APA
Shibili, S. M., Scolfaro, L. M. R., & Leite, J. R. (1992). Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS'. Applied Physics Letters, 60( ju 1992), 2895. -
NLM
Shibili SM, Scolfaro LMR, Leite JR. Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS'. Applied Physics Letters. 1992 ;60( ju 1992): 2895.[citado 2024 jul. 24 ] -
Vancouver
Shibili SM, Scolfaro LMR, Leite JR. Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS'. Applied Physics Letters. 1992 ;60( ju 1992): 2895.[citado 2024 jul. 24 ] - Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers
- Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures
- Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures
- Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
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