Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells (1997)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- DOI: 10.1006/spmi.1996.0206
- Assunto: MECÂNICA QUÂNTICA
- Language: Inglês
- Source:
- Título: Superlattices and Microstructures
- Volume/Número/Paginação/Ano: v. 21, n. 4, p. 581-585, 1997
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
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ABNT
SOLER, M A G et al. Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells. Superlattices and Microstructures, v. 21, n. 4, p. 581-585, 1997Tradução . . Disponível em: https://doi.org/10.1006/spmi.1996.0206. Acesso em: 25 jan. 2026. -
APA
Soler, M. A. G., Depeyrot, J., Morais, P. C., Soares, J. A. N. T., Scólfaro, L. M. R., Silva, E. C. F. da, et al. (1997). Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells. Superlattices and Microstructures, 21( 4), 581-585. doi:10.1006/spmi.1996.0206 -
NLM
Soler MAG, Depeyrot J, Morais PC, Soares JANT, Scólfaro LMR, Silva ECF da, Enderlein R, Weimann G, Trankle G. Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells [Internet]. Superlattices and Microstructures. 1997 ; 21( 4): 581-585.[citado 2026 jan. 25 ] Available from: https://doi.org/10.1006/spmi.1996.0206 -
Vancouver
Soler MAG, Depeyrot J, Morais PC, Soares JANT, Scólfaro LMR, Silva ECF da, Enderlein R, Weimann G, Trankle G. Photoreflectance measurements in GaAs/AlGaAs asymmetric quantum wells [Internet]. Superlattices and Microstructures. 1997 ; 21( 4): 581-585.[citado 2026 jan. 25 ] Available from: https://doi.org/10.1006/spmi.1996.0206 - Theory of luminescence spectra 'delta'-doping structures: application to GaAs
- Photoluminescence line shape analysis of 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS''GAMA'-doped quantum wells
- Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers
- Photoluminescence and photoreflectance studies on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures
- Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers
- Photoluminescence and photoreflectance studies on on 'DELTA'-doped 'IN IND.0.15''GA IND.0.85''AS' / 'GA''AS' quantum wells
- Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers
- AIA: band structure, energies at symmetry points
- Propriedades elasticas e momento de dipolo de moleculas diatomicas
Informações sobre o DOI: 10.1006/spmi.1996.0206 (Fonte: oaDOI API)
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