Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/'Ga IND.0.7''Al IND.0.3' Al quantum wells (1999)
- Authors:
- Autor USP: SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review B
- Volume/Número/Paginação/Ano: v. 60, n. 3, p. 1519-1522, 1999
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ABNT
OLIVEIRA, J. B. B. e MENESES, E. A. e SILVA, Euzi Conceicao Fernandes da. Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/'Ga IND.0.7''Al IND.0.3' Al quantum wells. Physical Review B, v. 60, n. 3, p. 1519-1522, 1999Tradução . . Acesso em: 16 ago. 2024. -
APA
Oliveira, J. B. B., Meneses, E. A., & Silva, E. C. F. da. (1999). Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/'Ga IND.0.7''Al IND.0.3' Al quantum wells. Physical Review B, 60( 3), 1519-1522. -
NLM
Oliveira JBB, Meneses EA, Silva ECF da. Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/'Ga IND.0.7''Al IND.0.3' Al quantum wells. Physical Review B. 1999 ; 60( 3): 1519-1522.[citado 2024 ago. 16 ] -
Vancouver
Oliveira JBB, Meneses EA, Silva ECF da. Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/'Ga IND.0.7''Al IND.0.3' Al quantum wells. Physical Review B. 1999 ; 60( 3): 1519-1522.[citado 2024 ago. 16 ] - Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well
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- Propriedades elasticas e momento de dipolo de moleculas diatomicas
- AIA: band structure, energies at symmetry points
- Estudo das propriedades de interfaces em poços quânticos de GaAs/GaAlAs
- Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells
- New results in photoluminescence-excitation measurements from Be single delta-doped GaAs layers
- New results on bound exciton in quantum wells
- Estudo de micro-rugosidades em pocos quanticos
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