AIA: band structure, energies at symmetry points (2009)
- Autor:
- Autor USP: SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Springer Berlin
- Publisher place: Heidelberg
- Date published: 2009
- Source:
- Título do periódico: New data and updates for I-VII, III-V, III-VI and IV-Vi compounds
- Volume/Número/Paginação/Ano: v. 44A, p. 170-171, 2009
-
ABNT
SILVA, Euzi Conceicao Fernandes da. AIA: band structure, energies at symmetry points. New data and updates for I-VII, III-V, III-VI and IV-Vi compounds. Tradução . Heidelberg: Springer Berlin, 2009. v. 44A. p. 170-171. . Acesso em: 18 set. 2024. -
APA
Silva, E. C. F. da. (2009). AIA: band structure, energies at symmetry points. In New data and updates for I-VII, III-V, III-VI and IV-Vi compounds (Vol. 44A, p. 170-171). Heidelberg: Springer Berlin. -
NLM
Silva ECF da. AIA: band structure, energies at symmetry points. In: New data and updates for I-VII, III-V, III-VI and IV-Vi compounds. Heidelberg: Springer Berlin; 2009. p. 170-171.[citado 2024 set. 18 ] -
Vancouver
Silva ECF da. AIA: band structure, energies at symmetry points. In: New data and updates for I-VII, III-V, III-VI and IV-Vi compounds. Heidelberg: Springer Berlin; 2009. p. 170-171.[citado 2024 set. 18 ] - Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well
- Novos resultados para excitons ligados em pocos quanticos
- Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells
- Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/'Ga IND.0.7''Al IND.0.3' Al quantum wells
- Estudo das propriedades de interfaces em poços quânticos de GaAs/GaAlAs
- Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells
- Propriedades elasticas e momento de dipolo de moleculas diatomicas
- New results in photoluminescence-excitation measurements from Be single delta-doped GaAs layers
- New results on bound exciton in quantum wells
- Estudo de micro-rugosidades em pocos quanticos
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas