The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs (2005)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2005
- Source:
- Conference titles: International Symposium on Silicon-on-Insulator Technology and Devices
-
ABNT
CAMILLO, Luciano Mendes et al. The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Tradução . Pennington: The Electrochemical Society, 2005. . . Acesso em: 19 set. 2024. -
APA
Camillo, L. M., Martino, J. A., Simoen, E., & Claeys, C. (2005). The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs. In International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Pennington: The Electrochemical Society. -
NLM
Camillo LM, Martino JA, Simoen E, Claeys C. The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs. In: International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Pennington: The Electrochemical Society; 2005. [citado 2024 set. 19 ] -
Vancouver
Camillo LM, Martino JA, Simoen E, Claeys C. The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs. In: International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Pennington: The Electrochemical Society; 2005. [citado 2024 set. 19 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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