ReP USP - Resultado da busca

Trabalho de evento
Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs (2008)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Rooyackers, Rita; Collaert, Nadine ; Claeys, Cor
Fonte: SBMICRO 2008: Anais. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Rooyackers, R., Collaert, N., & Claeys, C. (2008). Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C. Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 15 ]
Vancouver
Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C. Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 15 ]
Trabalho de evento
Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point (2008)
Camillo, Luciano Mendes; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: SBMICRO 2008: Anais. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAMILLO, Luciano Mendes et al. Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 15 nov. 2025.
APA
Camillo, L. M., Martino, J. A., Simoen, E., & Claeys, C. (2008). Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Camillo LM, Martino JA, Simoen E, Claeys C. Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 15 ]
Vancouver
Camillo LM, Martino JA, Simoen E, Claeys C. Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 15 ]
Trabalho de evento
Low temperature operation of undoped body triple-gate finFETs from an analog perspective (2007)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Rooyackers, Rita; Collaert, Nadine ; Claeys, Cor
Fonte: SBMicro 2007. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Low temperature operation of undoped body triple-gate finFETs from an analog perspective. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Rooyackers, R., Collaert, N., & Claeys, C. (2007). Low temperature operation of undoped body triple-gate finFETs from an analog perspective. In SBMicro 2007. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C. Low temperature operation of undoped body triple-gate finFETs from an analog perspective. SBMicro 2007. 2007 ;[citado 2025 nov. 15 ]
Vancouver
Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C. Low temperature operation of undoped body triple-gate finFETs from an analog perspective. SBMicro 2007. 2007 ;[citado 2025 nov. 15 ]
Trabalho de evento
The impact of the gate oxide thickness reduction on the gate induced floating body effect in SOI nMOSFETs (2007)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: SBMicro 2007. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AGOPIAN, Paula Ghedini Der et al. The impact of the gate oxide thickness reduction on the gate induced floating body effect in SOI nMOSFETs. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 15 nov. 2025.
APA
Agopian, P. G. D., Martino, J. A., Simoen, E., & Claeys, C. (2007). The impact of the gate oxide thickness reduction on the gate induced floating body effect in SOI nMOSFETs. In SBMicro 2007. Pennington: The Electrochemical Society.
NLM
Agopian PGD, Martino JA, Simoen E, Claeys C. The impact of the gate oxide thickness reduction on the gate induced floating body effect in SOI nMOSFETs. SBMicro 2007. 2007 ;[citado 2025 nov. 15 ]
Vancouver
Agopian PGD, Martino JA, Simoen E, Claeys C. The impact of the gate oxide thickness reduction on the gate induced floating body effect in SOI nMOSFETs. SBMicro 2007. 2007 ;[citado 2025 nov. 15 ]
Trabalho de evento
Influence of the N-type finFET width on the zero temperature coefficient (2007)
Bellodi, Marcello; Martino, João Antonio ; Claeys, Cor ; Camillo, Luciano Mendes; Simoen, Eddy
Fonte: SBMicro 2007. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello et al. Influence of the N-type finFET width on the zero temperature coefficient. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 15 nov. 2025.
APA
Bellodi, M., Martino, J. A., Claeys, C., Camillo, L. M., & Simoen, E. (2007). Influence of the N-type finFET width on the zero temperature coefficient. In SBMicro 2007. Pennington: The Electrochemical Society.
NLM
Bellodi M, Martino JA, Claeys C, Camillo LM, Simoen E. Influence of the N-type finFET width on the zero temperature coefficient. SBMicro 2007. 2007 ;[citado 2025 nov. 15 ]
Vancouver
Bellodi M, Martino JA, Claeys C, Camillo LM, Simoen E. Influence of the N-type finFET width on the zero temperature coefficient. SBMicro 2007. 2007 ;[citado 2025 nov. 15 ]
Trabalho de evento
Physical characterization and reliability aspects of MuGFETs (2007)
Claeys, Cor ; Simoen, Eddy ; Rafi, J.M.; Pavanello, Marcelo Antonio ; Martino, João Antonio
Fonte: SBMicro 2007. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CLAEYS, Cor et al. Physical characterization and reliability aspects of MuGFETs. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 15 nov. 2025.
APA
Claeys, C., Simoen, E., Rafi, J. M., Pavanello, M. A., & Martino, J. A. (2007). Physical characterization and reliability aspects of MuGFETs. In SBMicro 2007. Pennington: The Electrochemical Society.
NLM
Claeys C, Simoen E, Rafi JM, Pavanello MA, Martino JA. Physical characterization and reliability aspects of MuGFETs. SBMicro 2007. 2007 ;[citado 2025 nov. 15 ]
Vancouver
Claeys C, Simoen E, Rafi JM, Pavanello MA, Martino JA. Physical characterization and reliability aspects of MuGFETs. SBMicro 2007. 2007 ;[citado 2025 nov. 15 ]
Trabalho de evento
Analysis of the linear kink effect in partially depleted SOI nMOSFETs (2005)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AGOPIAN, Paula Ghedini Der et al. Analysis of the linear kink effect in partially depleted SOI nMOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 15 nov. 2025.
APA
Agopian, P. G. D., Martino, J. A., Simoen, E., & Claeys, C. (2005). Analysis of the linear kink effect in partially depleted SOI nMOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Agopian PGD, Martino JA, Simoen E, Claeys C. Analysis of the linear kink effect in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Vancouver
Agopian PGD, Martino JA, Simoen E, Claeys C. Analysis of the linear kink effect in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Trabalho de evento
Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K (2005)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., & Claeys, C. (2005). Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Simoen E, Claeys C. Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Vancouver
Pavanello MA, Martino JA, Simoen E, Claeys C. Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Trabalho de evento
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs (2005)
Galeti, Milene; Claeys, Cor ; Martino, João Antonio ; Simoen, Eddy
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GALETI, Milene et al. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 15 nov. 2025.
APA
Galeti, M., Claeys, C., Martino, J. A., & Simoen, E. (2005). Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Galeti M, Claeys C, Martino JA, Simoen E. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Vancouver
Galeti M, Claeys C, Martino JA, Simoen E. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Trabalho de evento
Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures (2004)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Microelectronic Technology and Devices SBMicro 2004. Proceedings, v. 2003-9. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., & Claeys, C. (2004). Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures. In Microelectronic Technology and Devices SBMicro 2004. Proceedings, v. 2003-9. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Simoen E, Claeys C. Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures. Microelectronic Technology and Devices SBMicro 2004. Proceedings, v. 2003-9. 2004 ;[citado 2025 nov. 15 ]
Vancouver
Pavanello MA, Martino JA, Simoen E, Claeys C. Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures. Microelectronic Technology and Devices SBMicro 2004. Proceedings, v. 2003-9. 2004 ;[citado 2025 nov. 15 ]
Parte de monografia/livro
Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 15 nov. 2025.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 15 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 15 ]
Parte de monografia/livro
The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 15 nov. 2025.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 15 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 15 ]

Unidades USP

ReP

Filtros

Autores