Low temperature operation of undoped body triple-gate finFETs from an analog perspective (2007)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; PAVANELLO, MARCELO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2007
- Source:
- Título: SBMicro 2007
- ISSN: 1938-5862
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
PAVANELLO, Marcelo Antonio et al. Low temperature operation of undoped body triple-gate finFETs from an analog perspective. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 01 dez. 2025. -
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Rooyackers, R., Collaert, N., & Claeys, C. (2007). Low temperature operation of undoped body triple-gate finFETs from an analog perspective. In SBMicro 2007. Pennington: The Electrochemical Society. -
NLM
Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C. Low temperature operation of undoped body triple-gate finFETs from an analog perspective. SBMicro 2007. 2007 ;[citado 2025 dez. 01 ] -
Vancouver
Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C. Low temperature operation of undoped body triple-gate finFETs from an analog perspective. SBMicro 2007. 2007 ;[citado 2025 dez. 01 ] - Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range
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- Impact of the graded-channel architecture on double gate transistors for high-performance analog applications
- Analysis of deep submicrometer bulk and fully depleted soi nmosfet analog operation at cryogenic temperatures
- Physical characterization and reliability aspects of MuGFETs
- A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures
- Analog circuit design using graded-channel silicon-on-insulator nMOSFETs
- Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs
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