ReP USP - Resultado da busca

Parte de monografia/livro
A physically-based continuous model for graded-channel SOI MOSFET (2002)
Pavanello, Marcelo Antonio ; Iniguez, Benjamin; Martino, João Antonio ; Flandre, Denis
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. A physically-based continuous model for graded-channel SOI MOSFET. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Pavanello, M. A., Iniguez, B., Martino, J. A., & Flandre, D. (2002). A physically-based continuous model for graded-channel SOI MOSFET. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Iniguez B, Martino JA, Flandre D. A physically-based continuous model for graded-channel SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Pavanello MA, Iniguez B, Martino JA, Flandre D. A physically-based continuous model for graded-channel SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications (2002)
Santos, R.E.; Doi, Ioshiaki; Diniz, J. A.; Swart, Jacobus Willibrordus; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SANTOS, R.E. et al. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Santos, R. E., Doi, I., Diniz, J. A., Swart, J. W., & Santos Filho, S. G. dos. (2002). Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Santos RE, Doi I, Diniz JA, Swart JW, Santos Filho SG dos. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Santos RE, Doi I, Diniz JA, Swart JW, Santos Filho SG dos. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Porous silicon sacrifical layers applied on micromechanical structures fabrication (2002)
Dantas, Michel Oliveira da Silva; Galeazzo, Elisabete ; Peres, Henrique Estanislau Maldonado ; Ramírez Fernandez, Francisco Javier
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
DANTAS, Michel Oliveira da Silva et al. Porous silicon sacrifical layers applied on micromechanical structures fabrication. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Dantas, M. O. da S., Galeazzo, E., Peres, H. E. M., & Ramírez Fernandez, F. J. (2002). Porous silicon sacrifical layers applied on micromechanical structures fabrication. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Porous silicon sacrifical layers applied on micromechanical structures fabrication. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Porous silicon sacrifical layers applied on micromechanical structures fabrication. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures (2002)
Galeti, Milene; Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GALETI, Milene e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Galeti, M., Pavanello, M. A., & Martino, J. A. (2002). Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Galeti M, Pavanello MA, Martino JA. Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Galeti M, Pavanello MA, Martino JA. Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes (2002)
Navia, Alan Rodrigo; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NAVIA, Alan Rodrigo e SANTOS FILHO, Sebastião Gomes dos. Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Navia, A. R., & Santos Filho, S. G. dos. (2002). Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Navia AR, Santos Filho SG dos. Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Navia AR, Santos Filho SG dos. Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
A simple analytical model of graded-channel SOI nMOSFET transconductance (2002)
Gimenez, Salvador Pinillos ; Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GIMENEZ, Salvador Pinillos e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. A simple analytical model of graded-channel SOI nMOSFET transconductance. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Gimenez, S. P., Pavanello, M. A., & Martino, J. A. (2002). A simple analytical model of graded-channel SOI nMOSFET transconductance. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Gimenez SP, Pavanello MA, Martino JA. A simple analytical model of graded-channel SOI nMOSFET transconductance. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Gimenez SP, Pavanello MA, Martino JA. A simple analytical model of graded-channel SOI nMOSFET transconductance. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Formation of nickel monosilicide onto (100) silicon wafer surfaces (2002)
Reis, Ronaldo Willian; Santos Filho, Sebastião Gomes dos ; Laganá, Armando Antonio Maria ; Doi, Ioshiaki; Swart, Jacobus Willibrordus
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
REIS, Ronaldo Willian et al. Formation of nickel monosilicide onto (100) silicon wafer surfaces. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Reis, R. W., Santos Filho, S. G. dos, Laganá, A. A. M., Doi, I., & Swart, J. W. (2002). Formation of nickel monosilicide onto (100) silicon wafer surfaces. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Reis RW, Santos Filho SG dos, Laganá AAM, Doi I, Swart JW. Formation of nickel monosilicide onto (100) silicon wafer surfaces. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Reis RW, Santos Filho SG dos, Laganá AAM, Doi I, Swart JW. Formation of nickel monosilicide onto (100) silicon wafer surfaces. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Polarization-difference imaging technique for material characterization: algorithm and some applications (2002)
Araújo, Hugo Puertas de; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ARAÚJO, Hugo Puertas de e SANTOS FILHO, Sebastião Gomes dos. Polarization-difference imaging technique for material characterization: algorithm and some applications. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Araújo, H. P. de, & Santos Filho, S. G. dos. (2002). Polarization-difference imaging technique for material characterization: algorithm and some applications. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Araújo HP de, Santos Filho SG dos. Polarization-difference imaging technique for material characterization: algorithm and some applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Araújo HP de, Santos Filho SG dos. Polarization-difference imaging technique for material characterization: algorithm and some applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Effect of stencil alignment on the solder beading in SMT process (2002)
Silva, Flávio Sousa; Oka, Mauricio Massazumi
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002, Porto Alegre, 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SILVA, Flávio Sousa e OKA, Mauricio Massazumi. Effect of stencil alignment on the solder beading in SMT process. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Silva, F. S., & Oka, M. M. (2002). Effect of stencil alignment on the solder beading in SMT process. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Silva FS, Oka MM. Effect of stencil alignment on the solder beading in SMT process. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Silva FS, Oka MM. Effect of stencil alignment on the solder beading in SMT process. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor (2002)
Sonnenberg, Victor ; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Sonnenberg, V., & Martino, J. A. (2002). Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Sonnenberg V, Martino JA. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Sonnenberg V, Martino JA. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Characterization of SF6 plasmas by RF electrical measurements (2002)
Pisani, Marcelo Bento; Verdonck, Patrick Bernard
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PISANI, Marcelo Bento e VERDONCK, Patrick Bernard. Characterization of SF6 plasmas by RF electrical measurements. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Pisani, M. B., & Verdonck, P. B. (2002). Characterization of SF6 plasmas by RF electrical measurements. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pisani MB, Verdonck PB. Characterization of SF6 plasmas by RF electrical measurements. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Pisani MB, Verdonck PB. Characterization of SF6 plasmas by RF electrical measurements. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Difference between kink and bipolar parasitic effects in thin film SOI MOSFET (2002)
Hoashi, Paulo Tetsuo; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
HOASHI, Paulo Tetsuo e MARTINO, João Antonio. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Hoashi, P. T., & Martino, J. A. (2002). Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Hoashi PT, Martino JA. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Hoashi PT, Martino JA. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K (2002)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Mercha, A.; Rafi, J.M.; Simoen, Eddy ; Claeys, Cor ; Van Meer, H.; De Meyer, K.
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Mercha, A., Rafi, J. M., Simoen, E., Claeys, C., et al. (2002). Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
The leakage current composition in thin film SOI NMOSFETS at high temperatures (2002)
Bellodi, Marcello; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
BELLODI, Marcello e MARTINO, João Antonio. The leakage current composition in thin film SOI NMOSFETS at high temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (2002). The leakage current composition in thin film SOI NMOSFETS at high temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Bellodi M, Martino JA. The leakage current composition in thin film SOI NMOSFETS at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Bellodi M, Martino JA. The leakage current composition in thin film SOI NMOSFETS at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Analog performance of graded-channel SOI NMOSFETS at low temperatures (2002)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Analog performance of graded-channel SOI NMOSFETS at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2002). Analog performance of graded-channel SOI NMOSFETS at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Flandre D. Analog performance of graded-channel SOI NMOSFETS at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Pavanello MA, Martino JA, Flandre D. Analog performance of graded-channel SOI NMOSFETS at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures (2002)
Páez Carreño, Marcelo Nelson ; Lopes, Alexandre Tavares; Alayo Chávez, Marco Isaías ; Pereyra, Inés
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PÁEZ CARREÑO, Marcelo Nelson et al. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Páez Carreño, M. N., Lopes, A. T., Alayo Chávez, M. I., & Pereyra, I. (2002). 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Phosphorus implantation on near stoichiometric a-SIC:H films (2002)
Oliveira, A. R.; Paez Carreño, Marcelo Nelson
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
OLIVEIRA, A. R. e PAEZ CARREÑO, Marcelo Nelson. Phosphorus implantation on near stoichiometric a-SIC:H films. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Oliveira, A. R., & Paez Carreño, M. N. (2002). Phosphorus implantation on near stoichiometric a-SIC:H films. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Oliveira AR, Paez Carreño MN. Phosphorus implantation on near stoichiometric a-SIC:H films. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Oliveira AR, Paez Carreño MN. Phosphorus implantation on near stoichiometric a-SIC:H films. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Parte de monografia/livro
Highly conductive n-type MC-Si:H films deposited at very low temperature (2002)
Nardes, Alexandre Mantovani; Dirani, Ely Antonio Tadeu ; Andrade, Adnei Melges de ; Fonseca, Fernando Josepetti
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NARDES, Alexandre Mantovani et al. Highly conductive n-type MC-Si:H films deposited at very low temperature. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 nov. 2025.
APA
Nardes, A. M., Dirani, E. A. T., Andrade, A. M. de, & Fonseca, F. J. (2002). Highly conductive n-type MC-Si:H films deposited at very low temperature. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nardes AM, Dirani EAT, Andrade AM de, Fonseca FJ. Highly conductive n-type MC-Si:H films deposited at very low temperature. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]
Vancouver
Nardes AM, Dirani EAT, Andrade AM de, Fonseca FJ. Highly conductive n-type MC-Si:H films deposited at very low temperature. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 28 ]

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