Source: Microlectronic Engineering. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
ABNT
PETITPREZ, E et al. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates. Microlectronic Engineering, v. 43, p. 59-65, 1998Tradução . . Disponível em: https://doi.org/10.1016/s0167-9317(98)00221-4. Acesso em: 05 out. 2024.APA
Petitprez, E., González-Borrero, P. P., Lubyshev, D. I., Marega Júnior, E., & Basmaji, P. (1998). Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates. Microlectronic Engineering, 43, 59-65. doi:10.1016/s0167-9317(98)00221-4NLM
Petitprez E, González-Borrero PP, Lubyshev DI, Marega Júnior E, Basmaji P. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates [Internet]. Microlectronic Engineering. 1998 ; 43 59-65.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/s0167-9317(98)00221-4Vancouver
Petitprez E, González-Borrero PP, Lubyshev DI, Marega Júnior E, Basmaji P. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates [Internet]. Microlectronic Engineering. 1998 ; 43 59-65.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/s0167-9317(98)00221-4