Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates (1998)
- Authors:
- USP affiliated authors: MAREGA JUNIOR, EUCLYDES - IFSC ; BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- DOI: 10.1016/s0167-9317(98)00221-4
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Microlectronic Engineering
- Volume/Número/Paginação/Ano: v. 43, p. 59-65, 1998
- Status:
- Nenhuma versão em acesso aberto identificada
-
ABNT
PETITPREZ, E et al. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates. Microlectronic Engineering, v. 43, p. 59-65, 1998Tradução . . Disponível em: https://doi.org/10.1016/s0167-9317(98)00221-4. Acesso em: 19 mar. 2026. -
APA
Petitprez, E., González-Borrero, P. P., Lubyshev, D. I., Marega Junior, E., & Basmaji, P. (1998). Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates. Microlectronic Engineering, 43, 59-65. doi:10.1016/s0167-9317(98)00221-4 -
NLM
Petitprez E, González-Borrero PP, Lubyshev DI, Marega Junior E, Basmaji P. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates [Internet]. Microlectronic Engineering. 1998 ; 43 59-65.[citado 2026 mar. 19 ] Available from: https://doi.org/10.1016/s0167-9317(98)00221-4 -
Vancouver
Petitprez E, González-Borrero PP, Lubyshev DI, Marega Junior E, Basmaji P. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates [Internet]. Microlectronic Engineering. 1998 ; 43 59-65.[citado 2026 mar. 19 ] Available from: https://doi.org/10.1016/s0167-9317(98)00221-4 - Wannier excitons study in self-organised 'IN''GA''AS' quantum dots
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Estudo com poli metil metacrilato (PMMA) e preparação de superfícies semicondutoras voltadas à construção de dispositivos
- Strain fields relaxation effect in vertically stacked InAs quantum dots layers grown on (311)A/B and (001) GaAs substrates
- Localized excitations in GaAs/AlAs superlattices grown on non(100) surfaces
- Study of surface kinetic effects in the mbe growth of iii-v compounds by rheed analysis
- Mbe growth and optical characterisation of self-organized 'IN''GA''AS' quantum dots based on high index planes
- Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces
- Análise do perfil gerado por ataque químico úmido em filme de GaAs, crescido sobre várias orientações
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
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