Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates (1998)
- Authors:
- USP affiliated authors: MAREGA JUNIOR, EUCLYDES - IFSC ; BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- DOI: 10.1016/s0167-9317(98)00221-4
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Microlectronic Engineering
- Volume/Número/Paginação/Ano: v. 43, p. 59-65, 1998
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
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ABNT
PETITPREZ, E et al. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates. Microlectronic Engineering, v. 43, p. 59-65, 1998Tradução . . Disponível em: https://doi.org/10.1016/s0167-9317(98)00221-4. Acesso em: 25 jan. 2026. -
APA
Petitprez, E., González-Borrero, P. P., Lubyshev, D. I., Marega Junior, E., & Basmaji, P. (1998). Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates. Microlectronic Engineering, 43, 59-65. doi:10.1016/s0167-9317(98)00221-4 -
NLM
Petitprez E, González-Borrero PP, Lubyshev DI, Marega Junior E, Basmaji P. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates [Internet]. Microlectronic Engineering. 1998 ; 43 59-65.[citado 2026 jan. 25 ] Available from: https://doi.org/10.1016/s0167-9317(98)00221-4 -
Vancouver
Petitprez E, González-Borrero PP, Lubyshev DI, Marega Junior E, Basmaji P. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates [Internet]. Microlectronic Engineering. 1998 ; 43 59-65.[citado 2026 jan. 25 ] Available from: https://doi.org/10.1016/s0167-9317(98)00221-4 - Propriedades oticas de super-redes de ('GA''AS') / ('AL''AS') crescidas nas direcoes (100) e (n11) a e b com n =1,2,3,5,7
- Photocurrent properties of 'DELTA-'si'' doped 'IN''GA''AS' multi-quantum well heterostructure
- Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots
- Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Determinacao da polaridade e preparacao quimica das superficies de 'GA''AS' (311) a e b antes do crescimento por mbe
- Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates
- Caracterização de nanoestruturas semicondutoras através de Técnica de Microscopia por Força Atômica (AFM)
- Optical properties of vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311)a / b and (100) 'GA''AS' substrates
- Visible-infrared photodetector based on 'DELTA'-'SI' doped 'IN''GA''AS' quantum well
Informações sobre o DOI: 10.1016/s0167-9317(98)00221-4 (Fonte: oaDOI API)
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