High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots (1996)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Vacuum Science and Technology B
- Volume/Número/Paginação/Ano: v.14, n.3 , p.2212-5, mai. 1996
-
ABNT
LUBYSHEV, D I et al. High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots. Journal of Vacuum Science and Technology B, v. 14, n. 3 , p. 2212-5, 1996Tradução . . Acesso em: 14 out. 2024. -
APA
Lubyshev, D. I., González-Borrero, P. P., Marega Junior, E., Petitprez, E., & Basmaji, P. (1996). High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots. Journal of Vacuum Science and Technology B, 14( 3 ), 2212-5. -
NLM
Lubyshev DI, González-Borrero PP, Marega Junior E, Petitprez E, Basmaji P. High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots. Journal of Vacuum Science and Technology B. 1996 ;14( 3 ): 2212-5.[citado 2024 out. 14 ] -
Vancouver
Lubyshev DI, González-Borrero PP, Marega Junior E, Petitprez E, Basmaji P. High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots. Journal of Vacuum Science and Technology B. 1996 ;14( 3 ): 2212-5.[citado 2024 out. 14 ] - Estudo e caracterização de pontos quânticos semicondutores através de microscopia eletrônica de transmissão
- Localização excitônica em super-redes de (GaAs)-(AlAs) crescidas em diferentes planos cristalinos
- Study of 'GA''SB' and 'AL''SB' surface superstructures based on the (100) planes
- Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations
- Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
- Molecular-beam epitaxy of self-assembled 'IN''AS' quantum dots on non- (100) oriented 'GA''AS'
- Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas