Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates (1997)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Superlattices and Microstructures
- Volume/Número/Paginação/Ano: v. 22, n. 1 , p. 85-89, 1997
-
ABNT
GONZÁLEZ-BORRERO, P P et al. Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures, v. 22, n. 1 , p. 85-89, 1997Tradução . . Acesso em: 26 jan. 2026. -
APA
González-Borrero, P. P., Marega Junior, E., Lubyshev, D. I., Petitprez, E., & Basmaji, P. (1997). Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures, 22( 1 ), 85-89. -
NLM
González-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures. 1997 ; 22( 1 ): 85-89.[citado 2026 jan. 26 ] -
Vancouver
González-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures. 1997 ; 22( 1 ): 85-89.[citado 2026 jan. 26 ] - Propriedades oticas de super-redes de ('GA''AS') / ('AL''AS') crescidas nas direcoes (100) e (n11) a e b com n =1,2,3,5,7
- Photocurrent properties of 'DELTA-'si'' doped 'IN''GA''AS' multi-quantum well heterostructure
- Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots
- Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'
- Determinacao da polaridade e preparacao quimica das superficies de 'GA''AS' (311) a e b antes do crescimento por mbe
- Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates
- Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates
- Caracterização de nanoestruturas semicondutoras através de Técnica de Microscopia por Força Atômica (AFM)
- Optical properties of vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311)a / b and (100) 'GA''AS' substrates
- Visible-infrared photodetector based on 'DELTA'-'SI' doped 'IN''GA''AS' quantum well
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