Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates (1996)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Abstract Book
- Conference titles: International Conference on Molecular Beam Epitaxy
-
ABNT
GONZÁLEZ-BORRERO, P P et al. Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates. 1996, Anais.. Malibu: Instituto de Física de São Carlos, Universidade de São Paulo, 1996. . Acesso em: 18 set. 2024. -
APA
González-Borrero, P. P., Lubyshev, D. I., Marega Júnior, E., & Basmaji, P. (1996). Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates. In Abstract Book. Malibu: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
González-Borrero PP, Lubyshev DI, Marega Júnior E, Basmaji P. Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates. Abstract Book. 1996 ;[citado 2024 set. 18 ] -
Vancouver
González-Borrero PP, Lubyshev DI, Marega Júnior E, Basmaji P. Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates. Abstract Book. 1996 ;[citado 2024 set. 18 ] - Localização excitônica em super-redes de (GaAs)-(AlAs) crescidas em diferentes planos cristalinos
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
- Estudo e caracterização de pontos quânticos semicondutores através de microscopia eletrônica de transmissão
- Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots
- Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam epitaxy of self-assembled 'IN''AS' quantum dots on non- (100) oriented 'GA''AS'
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots
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