Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots (1996)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- School: IFSC
- DOI: 10.1063/1.116461
- Subject: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Applied Physics Letters
- Volume/Número/Paginação/Ano: v.68, n.2 , p.205-7, jan. 1996
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
LUBYSHEV, D I et al. Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots. Applied Physics Letters, v. 68, n. ja 1996, p. 205-7, 1996Tradução . . Disponível em: http://dx.doi.org/10.1063/1.116461. Acesso em: 29 jun. 2022. -
APA
Lubyshev, D. I., González-Borrero, P. P., Marega Júnior, E., Petitprez, E., La Scala Junior, N., & Basmaji, P. (1996). Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots. Applied Physics Letters, 68( ja 1996), 205-7. doi:10.1063/1.116461 -
NLM
Lubyshev DI, González-Borrero PP, Marega Júnior E, Petitprez E, La Scala Junior N, Basmaji P. Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots [Internet]. Applied Physics Letters. 1996 ;68( ja 1996): 205-7.[citado 2022 jun. 29 ] Available from: http://dx.doi.org/10.1063/1.116461 -
Vancouver
Lubyshev DI, González-Borrero PP, Marega Júnior E, Petitprez E, La Scala Junior N, Basmaji P. Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots [Internet]. Applied Physics Letters. 1996 ;68( ja 1996): 205-7.[citado 2022 jun. 29 ] Available from: http://dx.doi.org/10.1063/1.116461 - Localização excitônica em super-redes de (GaAs)-(AlAs) crescidas em diferentes planos cristalinos
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
- Estudo e caracterização de pontos quânticos semicondutores através de microscopia eletrônica de transmissão
- Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots
- Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs
- Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam epitaxy of self-assembled 'IN''AS' quantum dots on non- (100) oriented 'GA''AS'
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
Informações sobre o DOI: 10.1063/1.116461 (Fonte: oaDOI API)
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