Visible-infrared photodetector based on 'DELTA'-'SI' doped 'IN''GA''AS' quantum well (1995)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Subjects: INTERFACE (MATERIA CONDENSADA); INFRAVERMELHO; EMISSÃO DA LUZ (IDENTIFICAÇÃO); POÇOS QUÂNTICOS
- Language: Inglês
- Imprenta:
- Publisher: Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título: Scientific Program and Abstracts
- Conference titles: Simposio Latino-Americano de Fisica do Estado Solido
-
ABNT
CAMPO JUNIOR, V L et al. Visible-infrared photodetector based on 'DELTA'-'SI' doped 'IN''GA''AS' quantum well. 1995, Anais.. Porto Alegre: Ufrgs, 1995. . Acesso em: 25 jan. 2026. -
APA
Campo Junior, V. L., Marega Junior, E., Rossi, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Visible-infrared photodetector based on 'DELTA'-'SI' doped 'IN''GA''AS' quantum well. In Scientific Program and Abstracts. Porto Alegre: Ufrgs. -
NLM
Campo Junior VL, Marega Junior E, Rossi JC, Lubyshev DI, Basmaji P. Visible-infrared photodetector based on 'DELTA'-'SI' doped 'IN''GA''AS' quantum well. Scientific Program and Abstracts. 1995 ;[citado 2026 jan. 25 ] -
Vancouver
Campo Junior VL, Marega Junior E, Rossi JC, Lubyshev DI, Basmaji P. Visible-infrared photodetector based on 'DELTA'-'SI' doped 'IN''GA''AS' quantum well. Scientific Program and Abstracts. 1995 ;[citado 2026 jan. 25 ] - Propriedades oticas de super-redes de ('GA''AS') / ('AL''AS') crescidas nas direcoes (100) e (n11) a e b com n =1,2,3,5,7
- Photocurrent properties of 'DELTA-'si'' doped 'IN''GA''AS' multi-quantum well heterostructure
- Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots
- Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Determinacao da polaridade e preparacao quimica das superficies de 'GA''AS' (311) a e b antes do crescimento por mbe
- Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates
- Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates
- Caracterização de nanoestruturas semicondutoras através de Técnica de Microscopia por Força Atômica (AFM)
- Optical properties of vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311)a / b and (100) 'GA''AS' substrates
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