Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS' (1996)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; CIRCUITOS ELETRÔNICOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Crystal Growth
- Volume/Número/Paginação/Ano: v.169, p.424-8, 1996
-
ABNT
GONZÁLEZ-BORRERO, P P et al. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth, v. 169, p. 424-8, 1996Tradução . . Acesso em: 25 jan. 2026. -
APA
González-Borrero, P. P., Lubyshev, D. I., Marega Junior, E., Petitprez, E., & Basmaji, P. (1996). Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth, 169, 424-8. -
NLM
González-Borrero PP, Lubyshev DI, Marega Junior E, Petitprez E, Basmaji P. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth. 1996 ;169 424-8.[citado 2026 jan. 25 ] -
Vancouver
González-Borrero PP, Lubyshev DI, Marega Junior E, Petitprez E, Basmaji P. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth. 1996 ;169 424-8.[citado 2026 jan. 25 ] - Propriedades oticas de super-redes de ('GA''AS') / ('AL''AS') crescidas nas direcoes (100) e (n11) a e b com n =1,2,3,5,7
- Photocurrent properties of 'DELTA-'si'' doped 'IN''GA''AS' multi-quantum well heterostructure
- Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Determinacao da polaridade e preparacao quimica das superficies de 'GA''AS' (311) a e b antes do crescimento por mbe
- Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates
- Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates
- Caracterização de nanoestruturas semicondutoras através de Técnica de Microscopia por Força Atômica (AFM)
- Optical properties of vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311)a / b and (100) 'GA''AS' substrates
- Visible-infrared photodetector based on 'DELTA'-'SI' doped 'IN''GA''AS' quantum well
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
