Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS' (1996)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- School: IFSC
- Subjects: MATÉRIA CONDENSADA; CIRCUITOS ELETRÔNICOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Crystal Growth
- Volume/Número/Paginação/Ano: v.169, p.424-8, 1996
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ABNT
GONZÁLEZ-BORRERO, P P et al. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth, v. 169, p. 424-8, 1996Tradução . . Acesso em: 07 jul. 2022. -
APA
González-Borrero, P. P., Lubyshev, D. I., Marega Júnior, E., Petitprez, E., & Basmaji, P. (1996). Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth, 169, 424-8. -
NLM
González-Borrero PP, Lubyshev DI, Marega Júnior E, Petitprez E, Basmaji P. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth. 1996 ;169 424-8.[citado 2022 jul. 07 ] -
Vancouver
González-Borrero PP, Lubyshev DI, Marega Júnior E, Petitprez E, Basmaji P. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth. 1996 ;169 424-8.[citado 2022 jul. 07 ] - Localização excitônica em super-redes de (GaAs)-(AlAs) crescidas em diferentes planos cristalinos
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
- Estudo e caracterização de pontos quânticos semicondutores através de microscopia eletrônica de transmissão
- Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots
- Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs
- Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam epitaxy of self-assembled 'IN''AS' quantum dots on non- (100) oriented 'GA''AS'
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
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