Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots (1997)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v.27, n.1 , p.11-3, 1997
-
ABNT
LUBYSHEV, D I et al. Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots. Brazilian Journal of Physics, v. 27, n. 1 , p. 11-3, 1997Tradução . . Acesso em: 31 dez. 2025. -
APA
Lubyshev, D. I., Pusep, Y. A., González-Borrero, P. P., Marega Junior, E., Petitprez, E., La Scala Junior, N., & Basmaji, P. (1997). Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots. Brazilian Journal of Physics, 27( 1 ), 11-3. -
NLM
Lubyshev DI, Pusep YA, González-Borrero PP, Marega Junior E, Petitprez E, La Scala Junior N, Basmaji P. Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots. Brazilian Journal of Physics. 1997 ;27( 1 ): 11-3.[citado 2025 dez. 31 ] -
Vancouver
Lubyshev DI, Pusep YA, González-Borrero PP, Marega Junior E, Petitprez E, La Scala Junior N, Basmaji P. Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots. Brazilian Journal of Physics. 1997 ;27( 1 ): 11-3.[citado 2025 dez. 31 ] - Estudo e caracterização de pontos quânticos semicondutores através de microscopia eletrônica de transmissão
- Localização excitônica em super-redes de (GaAs)-(AlAs) crescidas em diferentes planos cristalinos
- Study of 'GA''SB' and 'AL''SB' surface superstructures based on the (100) planes
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations
- Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam epitaxy of self-assembled 'IN''AS' quantum dots on non- (100) oriented 'GA''AS'
- Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots
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