Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices (1999)
- Authors:
- USP affiliated authors: MAREGA JUNIOR, EUCLYDES - IFSC ; BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher place: Belo Horizonte
- Date published: 1999
- Source:
- Título: Program and abstracts
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
PETITPREZ, Emmanuel et al. Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices. 1999, Anais.. Belo Horizonte: Instituto de Física de São Carlos, Universidade de São Paulo, 1999. . Acesso em: 29 dez. 2025. -
APA
Petitprez, E., Moshegov, N. T., Marega Junior, E., Basmaji, P., Mazel, A., Dorignac, D., & Formeaux, R. (1999). Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices. In Program and abstracts. Belo Horizonte: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Petitprez E, Moshegov NT, Marega Junior E, Basmaji P, Mazel A, Dorignac D, Formeaux R. Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices. Program and abstracts. 1999 ;[citado 2025 dez. 29 ] -
Vancouver
Petitprez E, Moshegov NT, Marega Junior E, Basmaji P, Mazel A, Dorignac D, Formeaux R. Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices. Program and abstracts. 1999 ;[citado 2025 dez. 29 ] - Estudo e caracterização de pontos quânticos semicondutores através de microscopia eletrônica de transmissão
- Localização excitônica em super-redes de (GaAs)-(AlAs) crescidas em diferentes planos cristalinos
- Study of 'GA''SB' and 'AL''SB' surface superstructures based on the (100) planes
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations
- Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam epitaxy of self-assembled 'IN''AS' quantum dots on non- (100) oriented 'GA''AS'
- Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots
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