Study of 'GA''SB' and 'AL''SB' surface superstructures based on the (100) planes (1995)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS); SUPERFÍCIE FÍSICA
- Language: Inglês
- Imprenta:
- Publisher: Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título: Scientific Program and Abstracts
- Conference titles: Simposio Latino-Americano de Fisica do Estado Solido
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ABNT
LUBYSHEV, D I et al. Study of 'GA''SB' and 'AL''SB' surface superstructures based on the (100) planes. 1995, Anais.. Porto Alegre: Ufrgs, 1995. . Acesso em: 29 dez. 2025. -
APA
Lubyshev, D. I., González-Borrero, P. P., Lubysheva, T. B., Marega Junior, E., La Scala Junior, N., & Basmaji, P. (1995). Study of 'GA''SB' and 'AL''SB' surface superstructures based on the (100) planes. In Scientific Program and Abstracts. Porto Alegre: Ufrgs. -
NLM
Lubyshev DI, González-Borrero PP, Lubysheva TB, Marega Junior E, La Scala Junior N, Basmaji P. Study of 'GA''SB' and 'AL''SB' surface superstructures based on the (100) planes. Scientific Program and Abstracts. 1995 ;[citado 2025 dez. 29 ] -
Vancouver
Lubyshev DI, González-Borrero PP, Lubysheva TB, Marega Junior E, La Scala Junior N, Basmaji P. Study of 'GA''SB' and 'AL''SB' surface superstructures based on the (100) planes. Scientific Program and Abstracts. 1995 ;[citado 2025 dez. 29 ] - Estudo e caracterização de pontos quânticos semicondutores através de microscopia eletrônica de transmissão
- Localização excitônica em super-redes de (GaAs)-(AlAs) crescidas em diferentes planos cristalinos
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations
- Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam epitaxy of self-assembled 'IN''AS' quantum dots on non- (100) oriented 'GA''AS'
- Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots
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