Molecular beam epitaxy of 'IN''AS' self-organized quantum dots on high-index oriented 'GA''AS' (1996)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Berlin
- Date published: 1996
- Source:
- Título do periódico: Proceedings
- Conference titles: International Conference on the Physics of Semiconductors
-
ABNT
GONZÁLEZ-BORRERO, P P et al. Molecular beam epitaxy of 'IN''AS' self-organized quantum dots on high-index oriented 'GA''AS'. 1996, Anais.. Berlin: World Scientific, 1996. . Acesso em: 24 abr. 2024. -
APA
González-Borrero, P. P., Marega Júnior, E., Lubyshev, D. I., Petitprez, E., & Basmaji, P. (1996). Molecular beam epitaxy of 'IN''AS' self-organized quantum dots on high-index oriented 'GA''AS'. In Proceedings. Berlin: World Scientific. -
NLM
González-Borrero PP, Marega Júnior E, Lubyshev DI, Petitprez E, Basmaji P. Molecular beam epitaxy of 'IN''AS' self-organized quantum dots on high-index oriented 'GA''AS'. Proceedings. 1996 ;[citado 2024 abr. 24 ] -
Vancouver
González-Borrero PP, Marega Júnior E, Lubyshev DI, Petitprez E, Basmaji P. Molecular beam epitaxy of 'IN''AS' self-organized quantum dots on high-index oriented 'GA''AS'. Proceedings. 1996 ;[citado 2024 abr. 24 ] - Surface kinetics effects at the mbe growth of iii-v compounds
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Projeto e construcao de um sistema de vacuo para uso em espectroscopia de massa de particulas ionizadas (sims)
- Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'
- Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates
- Caracterização de nanoestruturas semicondutoras através de Técnica de Microscopia por Força Atômica (AFM)
- Análise do perfil gerado por ataque químico úmido em filme de GaAs, crescido sobre várias orientações
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
