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  • Artigo de periodico

    Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing (2012)

    Keizer, J. G; Henriques, André Bohomoletz ; Maia, A D B; Quivy, A. A.; Koenraad, P. M

    Source: APPLIED PHYSICS LETTERS. Unidade: IF

    Subjects: EPITAXIA POR FEIXE MOLECULAR, FÍSICA DA MATÉRIA CONDENSADA

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      KEIZER, J. G et al. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. APPLIED PHYSICS LETTERS, v. 101 24, p. 243113, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4770371. Acesso em: 08 nov. 2025.

    • APA

      Keizer, J. G., Henriques, A. B., Maia, A. D. B., Quivy, A. A., & Koenraad, P. M. (2012). Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. APPLIED PHYSICS LETTERS, 101 24, 243113. doi:10.1063/1.4770371

    • NLM

      Keizer JG, Henriques AB, Maia ADB, Quivy AA, Koenraad PM. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing [Internet]. APPLIED PHYSICS LETTERS. 2012 ;101 24 243113.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4770371

    • Vancouver

      Keizer JG, Henriques AB, Maia ADB, Quivy AA, Koenraad PM. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing [Internet]. APPLIED PHYSICS LETTERS. 2012 ;101 24 243113.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4770371

  • Artigo de periodico

    Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs (2010)

    Morais, R R O; Dias, I F L; Duarte, J L; Laureto, E; Lourenço, S A; Silva, Euzi Conceição Fernandes da; Quivy, A. A.

    Source: Brazilian Journal of Physics. Unidade: IF

    Assunto: SEMICONDUTORES

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      MORAIS, R R O et al. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs. Brazilian Journal of Physics, v. 40, n. 1, p. 15-21, 2010Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332010000100003. Acesso em: 08 nov. 2025.

    • APA

      Morais, R. R. O., Dias, I. F. L., Duarte, J. L., Laureto, E., Lourenço, S. A., Silva, E. C. F. da, & Quivy, A. A. (2010). Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs. Brazilian Journal of Physics, 40( 1), 15-21. doi:10.1590/s0103-97332010000100003

    • NLM

      Morais RRO, Dias IFL, Duarte JL, Laureto E, Lourenço SA, Silva ECF da, Quivy AA. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs [Internet]. Brazilian Journal of Physics. 2010 ; 40( 1): 15-21.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1590/s0103-97332010000100003

    • Vancouver

      Morais RRO, Dias IFL, Duarte JL, Laureto E, Lourenço SA, Silva ECF da, Quivy AA. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs [Internet]. Brazilian Journal of Physics. 2010 ; 40( 1): 15-21.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1590/s0103-97332010000100003

  • Trabalho de evento-anais periodico

    Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction (2009)

    Freitas, Raul de Oliveira; Diaz, Beatriz; Abramof, Eduardo; Quivy, A. A.; Morelhão, Sérgio Luiz

    Source: Physica Status Solidi A - Applications and Materials Science. Conference titles: Biennial Conference on High Resolution X-Ray Diffraction and Imaging. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, DIFRAÇÃO POR RAIOS X

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    • ABNT

      FREITAS, Raul de Oliveira et al. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction. Physica Status Solidi A - Applications and Materials Science. Weinheim: Wiley-VCH Verlag. Disponível em: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART. Acesso em: 08 nov. 2025. , 2009

    • APA

      Freitas, R. de O., Diaz, B., Abramof, E., Quivy, A. A., & Morelhão, S. L. (2009). Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction. Physica Status Solidi A - Applications and Materials Science. Weinheim: Wiley-VCH Verlag. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART

    • NLM

      Freitas R de O, Diaz B, Abramof E, Quivy AA, Morelhão SL. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction [Internet]. Physica Status Solidi A - Applications and Materials Science. 2009 ; 206( 8):[citado 2025 nov. 08 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART

    • Vancouver

      Freitas R de O, Diaz B, Abramof E, Quivy AA, Morelhão SL. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction [Internet]. Physica Status Solidi A - Applications and Materials Science. 2009 ; 206( 8):[citado 2025 nov. 08 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext/122462600/PDFSTART

  • Artigo de periodico

    Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells (2009)

    Morais, R R O; Dias, I F L; Silva, M A T da; Cesar, D F; Duarte, J L; Lourenço, S A; Laureto, E; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA

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    • ABNT

      MORAIS, R R O et al. Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells. Journal of Physics-Condensed Matter, v. 21, n. 15, p. 155601/1-155601/7, 2009Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf. Acesso em: 08 nov. 2025.

    • APA

      Morais, R. R. O., Dias, I. F. L., Silva, M. A. T. da, Cesar, D. F., Duarte, J. L., Lourenço, S. A., et al. (2009). Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells. Journal of Physics-Condensed Matter, 21( 15), 155601/1-155601/7. Recuperado de https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf

    • NLM

      Morais RRO, Dias IFL, Silva MAT da, Cesar DF, Duarte JL, Lourenço SA, Laureto E, Silva ECF da, Quivy AA. Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 15): 155601/1-155601/7.[citado 2025 nov. 08 ] Available from: https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf

    • Vancouver

      Morais RRO, Dias IFL, Silva MAT da, Cesar DF, Duarte JL, Lourenço SA, Laureto E, Silva ECF da, Quivy AA. Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 15): 155601/1-155601/7.[citado 2025 nov. 08 ] Available from: https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf

  • Artigo de periodico

    Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction (2009)

    Freitas, Raul de Oliveira; Quivy, A. A.; Morelhão, Sérgio Luiz

    Source: Journal of Applied Physics,. Unidade: IF

    Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, DIFRAÇÃO POR RAIOS X

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    • ABNT

      FREITAS, Raul de Oliveira e QUIVY, A. A. e MORELHÃO, Sérgio Luiz. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction. Journal of Applied Physics, v. 105, n. 3, p. 036104-1/-03104/3, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3074376. Acesso em: 08 nov. 2025.

    • APA

      Freitas, R. de O., Quivy, A. A., & Morelhão, S. L. (2009). Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction. Journal of Applied Physics,, 105( 3), 036104-1/-03104/3. doi:10.1063/1.3074376

    • NLM

      Freitas R de O, Quivy AA, Morelhão SL. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [Internet]. Journal of Applied Physics,. 2009 ; 105( 3): 036104-1/-03104/3.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3074376

    • Vancouver

      Freitas R de O, Quivy AA, Morelhão SL. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [Internet]. Journal of Applied Physics,. 2009 ; 105( 3): 036104-1/-03104/3.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.3074376

  • Artigo de periodico

    Classical and quantum magnetoresistance in a two-subband electron system (2009)

    Mammani, Niko Churata; Gusev, Guennadii Michailovich; Silva, Euzi Conceicao Fernandes da; Raichev, O E; Quivy, A. A.; Bakarov, A K

    Source: Physical Review B. Unidade: IF

    Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES, POÇOS QUÂNTICOS

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      MAMMANI, Niko Churata et al. Classical and quantum magnetoresistance in a two-subband electron system. Physical Review B, v. 80, n. 7, p. 085304-1/085304-5, 2009Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal. Acesso em: 08 nov. 2025.

    • APA

      Mammani, N. C., Gusev, G. M., Silva, E. C. F. da, Raichev, O. E., Quivy, A. A., & Bakarov, A. K. (2009). Classical and quantum magnetoresistance in a two-subband electron system. Physical Review B, 80( 7), 085304-1/085304-5. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal

    • NLM

      Mammani NC, Gusev GM, Silva ECF da, Raichev OE, Quivy AA, Bakarov AK. Classical and quantum magnetoresistance in a two-subband electron system [Internet]. Physical Review B. 2009 ; 80( 7): 085304-1/085304-5.[citado 2025 nov. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal

    • Vancouver

      Mammani NC, Gusev GM, Silva ECF da, Raichev OE, Quivy AA, Bakarov AK. Classical and quantum magnetoresistance in a two-subband electron system [Internet]. Physical Review B. 2009 ; 80( 7): 085304-1/085304-5.[citado 2025 nov. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal

  • Artigo de periodico

    Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems (2009)

    Freitas, R O; Quivy, A. A.; Morelhão, Sérgio Luiz

    Conference titles: Activity Report 2008: LNLS/Brazilian Synchrotron Light Laboratory. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, SISTEMA QUÂNTICO, ESPALHAMENTO

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      FREITAS, R O e QUIVY, A. A. e MORELHÃO, Sérgio Luiz. Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems. 2009Tradução . . Disponível em: http://www.lnls.br/ar2008/web/index.html. Acesso em: 08 nov. 2025.

    • APA

      Freitas, R. O., Quivy, A. A., & Morelhão, S. L. (2009). Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems. Recuperado de http://www.lnls.br/ar2008/web/index.html

    • NLM

      Freitas RO, Quivy AA, Morelhão SL. Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems [Internet]. 2009 ;[citado 2025 nov. 08 ] Available from: http://www.lnls.br/ar2008/web/index.html

    • Vancouver

      Freitas RO, Quivy AA, Morelhão SL. Strong CTR-cap-layer coupling for X-ray scattering in InAs/GaAs (001) quantum dots systems [Internet]. 2009 ;[citado 2025 nov. 08 ] Available from: http://www.lnls.br/ar2008/web/index.html

  • Artigo de periodico

    The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells (2008)

    Silva, M A T da; Morais, R R O; Dias, I F L; Lourenço, S A; Duarte, J L; Laureto, E; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Subjects: SEMICONDUTORES, ESPALHAMENTO

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      SILVA, M A T da et al. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells. Journal of Physics-Condensed Matter, v. 20, n. 25, p. 255246/1-255246/9, 2008Tradução . . Disponível em: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d. Acesso em: 08 nov. 2025.

    • APA

      Silva, M. A. T. da, Morais, R. R. O., Dias, I. F. L., Lourenço, S. A., Duarte, J. L., Laureto, E., et al. (2008). The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells. Journal of Physics-Condensed Matter, 20( 25), 255246/1-255246/9. Recuperado de http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d

    • NLM

      Silva MAT da, Morais RRO, Dias IFL, Lourenço SA, Duarte JL, Laureto E, Quivy AA, Silva ECF da. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 25): 255246/1-255246/9.[citado 2025 nov. 08 ] Available from: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d

    • Vancouver

      Silva MAT da, Morais RRO, Dias IFL, Lourenço SA, Duarte JL, Laureto E, Quivy AA, Silva ECF da. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 25): 255246/1-255246/9.[citado 2025 nov. 08 ] Available from: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d

  • Artigo de periodico

    Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots (2008)

    Pagnossin, Ivan Ramos; Meikap, A K; Quivy, A. A.; Gusev, Guennadii Michailovich

    Source: Journal of Applied Physics. Unidade: IF

    Subjects: FILMES FINOS, POÇOS QUÂNTICOS

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      PAGNOSSIN, Ivan Ramos et al. Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots. Journal of Applied Physics, v. 104, n. 7, p. 073723/1-073723/6, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2996034. Acesso em: 08 nov. 2025.

    • APA

      Pagnossin, I. R., Meikap, A. K., Quivy, A. A., & Gusev, G. M. (2008). Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots. Journal of Applied Physics, 104( 7), 073723/1-073723/6. doi:10.1063/1.2996034

    • NLM

      Pagnossin IR, Meikap AK, Quivy AA, Gusev GM. Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots [Internet]. Journal of Applied Physics. 2008 ; 104( 7): 073723/1-073723/6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2996034

    • Vancouver

      Pagnossin IR, Meikap AK, Quivy AA, Gusev GM. Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots [Internet]. Journal of Applied Physics. 2008 ; 104( 7): 073723/1-073723/6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2996034

  • Artigo de periodico

    Landau-level crossing in two-subband systems in a tilted magnetic field (2007)

    Duarte, C A; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Bakarov, A K; Portal, J C

    Source: Physical Review B. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, EFEITO HALL

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      DUARTE, C A et al. Landau-level crossing in two-subband systems in a tilted magnetic field. Physical Review B, v. 76, n. 7, p. 075346/1-075346/8, 2007Tradução . . Disponível em: https://doi.org/10.1103/physrevb.76.075346. Acesso em: 08 nov. 2025.

    • APA

      Duarte, C. A., Gusev, G. M., Quivy, A. A., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2007). Landau-level crossing in two-subband systems in a tilted magnetic field. Physical Review B, 76( 7), 075346/1-075346/8. doi:10.1103/physrevb.76.075346

    • NLM

      Duarte CA, Gusev GM, Quivy AA, Lamas TE, Bakarov AK, Portal JC. Landau-level crossing in two-subband systems in a tilted magnetic field [Internet]. Physical Review B. 2007 ; 76( 7): 075346/1-075346/8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/physrevb.76.075346

    • Vancouver

      Duarte CA, Gusev GM, Quivy AA, Lamas TE, Bakarov AK, Portal JC. Landau-level crossing in two-subband systems in a tilted magnetic field [Internet]. Physical Review B. 2007 ; 76( 7): 075346/1-075346/8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/physrevb.76.075346

  • Artigo de periodico

    Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system (2007)

    Freitas, Raul de Oliveira; Lamas, T. E.; Quivy, A. A.; Morelhão, Sérgio Luiz

    Source: Physica Status Solidi A - Application and Materials Science. Unidade: IF

    Assunto: SUPERFÍCIE FÍSICA

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      FREITAS, Raul de Oliveira et al. Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system. Physica Status Solidi A - Application and Materials Science, v. 204, n. 8, p. 2548-2454, 2007Tradução . . Disponível em: https://doi.org/10.1002/pssa.200675673. Acesso em: 08 nov. 2025.

    • APA

      Freitas, R. de O., Lamas, T. E., Quivy, A. A., & Morelhão, S. L. (2007). Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system. Physica Status Solidi A - Application and Materials Science, 204( 8), 2548-2454. doi:10.1002/pssa.200675673

    • NLM

      Freitas R de O, Lamas TE, Quivy AA, Morelhão SL. Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system [Internet]. Physica Status Solidi A - Application and Materials Science. 2007 ; 204( 8): 2548-2454.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1002/pssa.200675673

    • Vancouver

      Freitas R de O, Lamas TE, Quivy AA, Morelhão SL. Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system [Internet]. Physica Status Solidi A - Application and Materials Science. 2007 ; 204( 8): 2548-2454.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1002/pssa.200675673

  • Trabalho de evento-anais periodico

    In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat (2007)

    Martini, S; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Marques, E B

    Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF

    Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, EPITAXIA POR FEIXE MOLECULAR

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      MARTINI, S et al. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal. Acesso em: 08 nov. 2025. , 2007

    • APA

      Martini, S., Quivy, A. A., Silva, E. C. F. da, & Marques, E. B. (2007). In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal

    • NLM

      Martini S, Quivy AA, Silva ECF da, Marques EB. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat [Internet]. AIP Conference Proceedings. 2007 ; 893 17-18.[citado 2025 nov. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal

    • Vancouver

      Martini S, Quivy AA, Silva ECF da, Marques EB. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat [Internet]. AIP Conference Proceedings. 2007 ; 893 17-18.[citado 2025 nov. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal

  • Artigo de periodico

    Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells (2007)

    Ortiz de Zevallos, Angela M; Cano, Nilo Francisco; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Portal, J C

    Source: Physical Review B. Unidade: IF

    Assunto: POÇOS QUÂNTICOS

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    • ABNT

      ORTIZ DE ZEVALLOS, Angela M et al. Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells. Physical Review B, v. 75, n. 20, p. 205324/1-205324/8, 2007Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal. Acesso em: 08 nov. 2025.

    • APA

      Ortiz de Zevallos, A. M., Cano, N. F., Gusev, G. M., Quivy, A. A., Lamas, T. E., & Portal, J. C. (2007). Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells. Physical Review B, 75( 20), 205324/1-205324/8. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal

    • NLM

      Ortiz de Zevallos AM, Cano NF, Gusev GM, Quivy AA, Lamas TE, Portal JC. Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells [Internet]. Physical Review B. 2007 ; 75( 20): 205324/1-205324/8.[citado 2025 nov. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal

    • Vancouver

      Ortiz de Zevallos AM, Cano NF, Gusev GM, Quivy AA, Lamas TE, Portal JC. Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells [Internet]. Physical Review B. 2007 ; 75( 20): 205324/1-205324/8.[citado 2025 nov. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal

  • Artigo de periodico

    The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy (2007)

    Rudno-Rudziñski, W; Sek, G; Misiewicz, J; Lamas, T. E.; Quivy, A. A.

    Source: Journal of Applied Physics. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, EFEITO MOSSBAUER, LASER

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    • ABNT

      RUDNO-RUDZIÑSKI, W et al. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, v. 101, n. 7, p. 0735018/1-073518/4, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2714686. Acesso em: 08 nov. 2025.

    • APA

      Rudno-Rudziñski, W., Sek, G., Misiewicz, J., Lamas, T. E., & Quivy, A. A. (2007). The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, 101( 7), 0735018/1-073518/4. doi:10.1063/1.2714686

    • NLM

      Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2714686

    • Vancouver

      Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2714686

  • Artigo de periodico

    Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells (2007)

    Cunha, J F R; Silva, S W da; Morais, P C; Lamas, T. E.; Quivy, A. A.

    Source: Journal of Applied Physics. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES

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      CUNHA, J F R et al. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, v. 102, n. 4, p. 0437048/1-043704/6, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2769963. Acesso em: 08 nov. 2025.

    • APA

      Cunha, J. F. R., Silva, S. W. da, Morais, P. C., Lamas, T. E., & Quivy, A. A. (2007). Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, 102( 4), 0437048/1-043704/6. doi:10.1063/1.2769963

    • NLM

      Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2769963

    • Vancouver

      Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2769963

  • Trabalho de evento

    Difusão de portadores em poços quânticos assimétricos (2006)

    Cunha, J F R; Silva, S W; Morais, P C; Quivy, A. A.; Lamas, T. E.; Cunha, J F R

    Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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    • ABNT

      CUNHA, J F R et al. Difusão de portadores em poços quânticos assimétricos. 2006, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 2006. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R1105-1.pdf. Acesso em: 08 nov. 2025.

    • APA

      Cunha, J. F. R., Silva, S. W., Morais, P. C., Quivy, A. A., Lamas, T. E., & Cunha, J. F. R. (2006). Difusão de portadores em poços quânticos assimétricos. In . São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R1105-1.pdf

    • NLM

      Cunha JFR, Silva SW, Morais PC, Quivy AA, Lamas TE, Cunha JFR. Difusão de portadores em poços quânticos assimétricos [Internet]. 2006 ;[citado 2025 nov. 08 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R1105-1.pdf

    • Vancouver

      Cunha JFR, Silva SW, Morais PC, Quivy AA, Lamas TE, Cunha JFR. Difusão de portadores em poços quânticos assimétricos [Internet]. 2006 ;[citado 2025 nov. 08 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxix/sys/resumos/R1105-1.pdf

  • Artigo de periodico

    High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition (2006)

    Szafraniec, J; Tsao, S; Zhang, W; Lim, H; Taguchi, M; Quivy, A. A.; Movaghar, B; Razeghi, M

    Source: Applied Physics Letters. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS

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      SZAFRANIEC, J et al. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition. Applied Physics Letters, v. 88, n. 12, p. 121102/1-121102/3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2188056. Acesso em: 08 nov. 2025.

    • APA

      Szafraniec, J., Tsao, S., Zhang, W., Lim, H., Taguchi, M., Quivy, A. A., et al. (2006). High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition. Applied Physics Letters, 88( 12), 121102/1-121102/3. doi:10.1063/1.2188056

    • NLM

      Szafraniec J, Tsao S, Zhang W, Lim H, Taguchi M, Quivy AA, Movaghar B, Razeghi M. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition [Internet]. Applied Physics Letters. 2006 ; 88( 12): 121102/1-121102/3.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2188056

    • Vancouver

      Szafraniec J, Tsao S, Zhang W, Lim H, Taguchi M, Quivy AA, Movaghar B, Razeghi M. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition [Internet]. Applied Physics Letters. 2006 ; 88( 12): 121102/1-121102/3.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2188056

  • Artigo de periodico

    Electric field controlled g-factor in parabolic well determined by transport measurements (2006)

    Duarte, Cesário Antonio; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Portal, J C

    Source: Physica E-Low-Dimensional Systems & Nanostructures. Unidade: IF

    Assunto: POÇOS QUÂNTICOS

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      DUARTE, Cesário Antonio et al. Electric field controlled g-factor in parabolic well determined by transport measurements. Physica E-Low-Dimensional Systems & Nanostructures, v. 34, n. 1-2, p. 329-332, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2006.03.086. Acesso em: 08 nov. 2025.

    • APA

      Duarte, C. A., Gusev, G. M., Quivy, A. A., Lamas, T. E., & Portal, J. C. (2006). Electric field controlled g-factor in parabolic well determined by transport measurements. Physica E-Low-Dimensional Systems & Nanostructures, 34( 1-2), 329-332. doi:10.1016/j.physe.2006.03.086

    • NLM

      Duarte CA, Gusev GM, Quivy AA, Lamas TE, Portal JC. Electric field controlled g-factor in parabolic well determined by transport measurements [Internet]. Physica E-Low-Dimensional Systems & Nanostructures. 2006 ; 34( 1-2): 329-332.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1016/j.physe.2006.03.086

    • Vancouver

      Duarte CA, Gusev GM, Quivy AA, Lamas TE, Portal JC. Electric field controlled g-factor in parabolic well determined by transport measurements [Internet]. Physica E-Low-Dimensional Systems & Nanostructures. 2006 ; 34( 1-2): 329-332.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1016/j.physe.2006.03.086

  • Artigo de periodico

    InGaAs embedding of large InAs quantum dots obtained by pulsed In deposition for long-wavelength applications (2006)

    Lamas, Tomás Erikson; Quivy, A. A.

    Source: Brazilian Journal of Physics. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS

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    • ABNT

      LAMAS, Tomás Erikson e QUIVY, A. A. InGaAs embedding of large InAs quantum dots obtained by pulsed In deposition for long-wavelength applications. Brazilian Journal of Physics, v. 36, n. 2A, p. 405-407, 2006Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332006000300046. Acesso em: 08 nov. 2025.

    • APA

      Lamas, T. E., & Quivy, A. A. (2006). InGaAs embedding of large InAs quantum dots obtained by pulsed In deposition for long-wavelength applications. Brazilian Journal of Physics, 36( 2A), 405-407. doi:10.1590/s0103-97332006000300046

    • NLM

      Lamas TE, Quivy AA. InGaAs embedding of large InAs quantum dots obtained by pulsed In deposition for long-wavelength applications [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 405-407.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1590/s0103-97332006000300046

    • Vancouver

      Lamas TE, Quivy AA. InGaAs embedding of large InAs quantum dots obtained by pulsed In deposition for long-wavelength applications [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 405-407.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1590/s0103-97332006000300046

  • Artigo de periodico

    Magnetotransport in "Al IND.X" "Ga IND.X-1" As quantum wells with different potential shapes (2006)

    Cano, Nilo Francisco; Duarte, Celso de Araújo; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.

    Source: Brazilian Journal of Physics. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS

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    • ABNT

      CANO, Nilo Francisco et al. Magnetotransport in "Al IND.X" "Ga IND.X-1" As quantum wells with different potential shapes. Brazilian Journal of Physics, v. 36, n. 2A, p. 336-339, 2006Tradução . . Disponível em: http://www.sbfisica.org.br/bjp/files/v36_336.pdf. Acesso em: 08 nov. 2025.

    • APA

      Cano, N. F., Duarte, C. de A., Gusev, G. M., Quivy, A. A., & Lamas, T. E. (2006). Magnetotransport in "Al IND.X" "Ga IND.X-1" As quantum wells with different potential shapes. Brazilian Journal of Physics, 36( 2A), 336-339. Recuperado de http://www.sbfisica.org.br/bjp/files/v36_336.pdf

    • NLM

      Cano NF, Duarte C de A, Gusev GM, Quivy AA, Lamas TE. Magnetotransport in "Al IND.X" "Ga IND.X-1" As quantum wells with different potential shapes [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 336-339.[citado 2025 nov. 08 ] Available from: http://www.sbfisica.org.br/bjp/files/v36_336.pdf

    • Vancouver

      Cano NF, Duarte C de A, Gusev GM, Quivy AA, Lamas TE. Magnetotransport in "Al IND.X" "Ga IND.X-1" As quantum wells with different potential shapes [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 336-339.[citado 2025 nov. 08 ] Available from: http://www.sbfisica.org.br/bjp/files/v36_336.pdf

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