Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
ABNT
VERDONCK, Patrick Bernard et al. Silicon surface roughness induced by SF6-based reactive ion etching process for micromachining applications. Journal of Solid-State Devices and Circuits, v. 6, n. 1, p. 1-6, 1998Tradução . . Acesso em: 26 ago. 2024.APA
Verdonck, P. B., Mansano, R. D., Maciel, H. S., & Salvadori, M. C. B. da S. (1998). Silicon surface roughness induced by SF6-based reactive ion etching process for micromachining applications. Journal of Solid-State Devices and Circuits, 6( 1), 1-6.NLM
Verdonck PB, Mansano RD, Maciel HS, Salvadori MCB da S. Silicon surface roughness induced by SF6-based reactive ion etching process for micromachining applications. Journal of Solid-State Devices and Circuits. 1998 ; 6( 1): 1-6.[citado 2024 ago. 26 ]Vancouver
Verdonck PB, Mansano RD, Maciel HS, Salvadori MCB da S. Silicon surface roughness induced by SF6-based reactive ion etching process for micromachining applications. Journal of Solid-State Devices and Circuits. 1998 ; 6( 1): 1-6.[citado 2024 ago. 26 ]