ReP USP - Resultado da busca

Artigo de periodico
Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study (2008)
Boscariol, Michelle Rigamonti; Moreira, Adir José; Mansano, Ronaldo Domingues ; Kikuchi, Irene Satiko ; Pinto, Terezinha de Jesus Andreoli
Source: International Journal of Food Science and Technology. Unidades: EP, FCF
Subjects: PLASMA, OXIGÊNIO, MICROBIOLOGIA
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ABNT
BOSCARIOL, Michelle Rigamonti et al. Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology, v. 43, n. 5, p. 170-175, 2008Tradução . . Acesso em: 05 nov. 2024.
APA
Boscariol, M. R., Moreira, A. J., Mansano, R. D., Kikuchi, I. S., & Pinto, T. de J. A. (2008). Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology, 43( 5), 170-175.
NLM
Boscariol MR, Moreira AJ, Mansano RD, Kikuchi IS, Pinto T de JA. Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology. 2008 ;43( 5): 170-175.[citado 2024 nov. 05 ]
Vancouver
Boscariol MR, Moreira AJ, Mansano RD, Kikuchi IS, Pinto T de JA. Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology. 2008 ;43( 5): 170-175.[citado 2024 nov. 05 ]
Artigo de periodico
Generation and characterization of polymeric tridimensional microstrucutres for micromachine application (2003)
Mousinho, Ana Paula; Mansano, Ronaldo Domingues ; Arruda, Antonio Carlos Santos de
Source: Microelectronics Journal,. Unidade: EP
Assunto: NANOTECNOLOGIA
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MOUSINHO, Ana Paula e MANSANO, Ronaldo Domingues e ARRUDA, Antonio Carlos Santos de. Generation and characterization of polymeric tridimensional microstrucutres for micromachine application. Microelectronics Journal, v. 34, n. 5-8, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00085-5. Acesso em: 05 nov. 2024.
APA
Mousinho, A. P., Mansano, R. D., & Arruda, A. C. S. de. (2003). Generation and characterization of polymeric tridimensional microstrucutres for micromachine application. Microelectronics Journal,, 34( 5-8). doi:10.1016/s0026-2692(03)00085-5
NLM
Mousinho AP, Mansano RD, Arruda ACS de. Generation and characterization of polymeric tridimensional microstrucutres for micromachine application [Internet]. Microelectronics Journal,. 2003 ; 34( 5-8):[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/s0026-2692(03)00085-5
Vancouver
Mousinho AP, Mansano RD, Arruda ACS de. Generation and characterization of polymeric tridimensional microstrucutres for micromachine application [Internet]. Microelectronics Journal,. 2003 ; 34( 5-8):[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/s0026-2692(03)00085-5
Artigo de periodico
High density plasma chemical vapor deposition of diamond-like carbon films (2003)
Mousinho, Ana Paula; Mansano, Ronaldo Domingues ; Massi, Marcos; Zambom, Luís da Silva
Source: Microelectronics Journal. Unidade: EP
Assunto: PLASMA (MICROELETRÔNICA)
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ABNT
MOUSINHO, Ana Paula et al. High density plasma chemical vapor deposition of diamond-like carbon films. Microelectronics Journal, v. 34, n. 5-8, p. 627-629, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00065-x. Acesso em: 05 nov. 2024.
APA
Mousinho, A. P., Mansano, R. D., Massi, M., & Zambom, L. da S. (2003). High density plasma chemical vapor deposition of diamond-like carbon films. Microelectronics Journal, 34( 5-8), 627-629. doi:10.1016/s0026-2692(03)00065-x
NLM
Mousinho AP, Mansano RD, Massi M, Zambom L da S. High density plasma chemical vapor deposition of diamond-like carbon films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 627-629.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/s0026-2692(03)00065-x
Vancouver
Mousinho AP, Mansano RD, Massi M, Zambom L da S. High density plasma chemical vapor deposition of diamond-like carbon films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 627-629.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/s0026-2692(03)00065-x
Artigo de periodico
Plasma etching of DLC films for microfluidic channels (2003)
Massi, Marcos; Jaramillo Ocampo, Juan Manuel; Maciel, Homero Santiago; Grigorov, K.; Otani, C.; Santos, L. V.; Mansano, Ronaldo Domingues
Source: Microelectronics Journal,. Unidade: EP
Assunto: PLASMA (MICROELETRÔNICA)
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ABNT
MASSI, Marcos et al. Plasma etching of DLC films for microfluidic channels. Microelectronics Journal, v. 34, n. 5-8, p. 635-638, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00077-6. Acesso em: 05 nov. 2024.
APA
Massi, M., Jaramillo Ocampo, J. M., Maciel, H. S., Grigorov, K., Otani, C., Santos, L. V., & Mansano, R. D. (2003). Plasma etching of DLC films for microfluidic channels. Microelectronics Journal,, 34( 5-8), 635-638. doi:10.1016/s0026-2692(03)00077-6
NLM
Massi M, Jaramillo Ocampo JM, Maciel HS, Grigorov K, Otani C, Santos LV, Mansano RD. Plasma etching of DLC films for microfluidic channels [Internet]. Microelectronics Journal,. 2003 ; 34( 5-8): 635-638.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/s0026-2692(03)00077-6
Vancouver
Massi M, Jaramillo Ocampo JM, Maciel HS, Grigorov K, Otani C, Santos LV, Mansano RD. Plasma etching of DLC films for microfluidic channels [Internet]. Microelectronics Journal,. 2003 ; 34( 5-8): 635-638.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/s0026-2692(03)00077-6
Artigo de periodico
Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia (2003)
Zambom, Luís da Silva ; Mansano, Ronaldo Domingues
Source: Vacuum. Unidade: EP
Assunto: PLASMA (MICROELETRÔNICA)
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ABNT
ZAMBOM, Luís da Silva e MANSANO, Ronaldo Domingues. Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia. Vacuum, v. 71, n. 4, p. 439-444, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0042-207x(03)00002-2. Acesso em: 05 nov. 2024.
APA
Zambom, L. da S., & Mansano, R. D. (2003). Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia. Vacuum, 71( 4), 439-444. doi:10.1016/s0042-207x(03)00002-2
NLM
Zambom L da S, Mansano RD. Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia [Internet]. Vacuum. 2003 ; 71( 4): 439-444.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/s0042-207x(03)00002-2
Vancouver
Zambom L da S, Mansano RD. Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia [Internet]. Vacuum. 2003 ; 71( 4): 439-444.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/s0042-207x(03)00002-2
Artigo de periodico
The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films (2003)
Guerino, M.; Massi, Marcos; Maciel, Homero Santiago; Otani, C.; Mansano, Ronaldo Domingues
Source: Microelectronics Journal. Unidade: EP
Assunto: PLASMA (MICROELETRÔNICA)
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ABNT
GUERINO, M. et al. The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films. Microelectronics Journal, v. 34, n. 5-8, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00079-x. Acesso em: 05 nov. 2024.
APA
Guerino, M., Massi, M., Maciel, H. S., Otani, C., & Mansano, R. D. (2003). The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films. Microelectronics Journal, 34( 5-8). doi:10.1016/s0026-2692(03)00079-x
NLM
Guerino M, Massi M, Maciel HS, Otani C, Mansano RD. The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8):[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/s0026-2692(03)00079-x
Vancouver
Guerino M, Massi M, Maciel HS, Otani C, Mansano RD. The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8):[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/s0026-2692(03)00079-x
Artigo de periodico
Electrical and structural characterization of DLC films deposited by magnetron sputtering (2001)
Massi, Marcos; Maciel, Homero Santiago; Otani, C.; Mansano, Ronaldo Domingues ; Verdonck, Patrick Bernard
Source: Journal of Materials Science: Materials in Electronics. Unidade: EP
Assunto: FILMES FINOS
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ABNT
MASSI, Marcos et al. Electrical and structural characterization of DLC films deposited by magnetron sputtering. Journal of Materials Science: Materials in Electronics, v. 12, p. 343-346, 2001Tradução . . Acesso em: 05 nov. 2024.
APA
Massi, M., Maciel, H. S., Otani, C., Mansano, R. D., & Verdonck, P. B. (2001). Electrical and structural characterization of DLC films deposited by magnetron sputtering. Journal of Materials Science: Materials in Electronics, 12, 343-346.
NLM
Massi M, Maciel HS, Otani C, Mansano RD, Verdonck PB. Electrical and structural characterization of DLC films deposited by magnetron sputtering. Journal of Materials Science: Materials in Electronics. 2001 ; 12 343-346.[citado 2024 nov. 05 ]
Vancouver
Massi M, Maciel HS, Otani C, Mansano RD, Verdonck PB. Electrical and structural characterization of DLC films deposited by magnetron sputtering. Journal of Materials Science: Materials in Electronics. 2001 ; 12 343-346.[citado 2024 nov. 05 ]
Artigo de periodico
Electrical and structural characterisation of DLC films deposited by magnetron sputtering (2001)
Massi, Marcos; Maciel, Homero Santiago; Otani, C.; Mansano, Ronaldo Domingues ; Verdonck, Patrick Bernard
Source: Journal of Materials Science: Materials in Electronics. Conference titles: International Conference on Materials for Microelectronics. Unidade: EP
Assunto: FILMES
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ABNT
MASSI, Marcos et al. Electrical and structural characterisation of DLC films deposited by magnetron sputtering. Journal of Materials Science: Materials in Electronics, v. 12, p. 343–346, 2001Tradução . . Disponível em: https://doi.org/10.1023/A:1011252629646. Acesso em: 05 nov. 2024.
APA
Massi, M., Maciel, H. S., Otani, C., Mansano, R. D., & Verdonck, P. B. (2001). Electrical and structural characterisation of DLC films deposited by magnetron sputtering. Journal of Materials Science: Materials in Electronics, 12, 343–346. doi:10.1023/A:1011252629646
NLM
Massi M, Maciel HS, Otani C, Mansano RD, Verdonck PB. Electrical and structural characterisation of DLC films deposited by magnetron sputtering [Internet]. Journal of Materials Science: Materials in Electronics. 2001 ; 12 343–346.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1023/A:1011252629646
Vancouver
Massi M, Maciel HS, Otani C, Mansano RD, Verdonck PB. Electrical and structural characterisation of DLC films deposited by magnetron sputtering [Internet]. Journal of Materials Science: Materials in Electronics. 2001 ; 12 343–346.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1023/A:1011252629646
Trabalho de evento-resumo
Deposition of silicon nitride films by LPCVD assisted by high density plasma (1998)
Zambom, Luís da Silva ; Mansano, Ronaldo Domingues ; Furlan, Rogério
Source: IVC-14, ICSS-10, NANO-5, QSA-10: abstract book. Conference titles: International Vacuum Congress. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
ZAMBOM, Luís da Silva e MANSANO, Ronaldo Domingues e FURLAN, Rogério. Deposition of silicon nitride films by LPCVD assisted by high density plasma. 1998, Anais.. Birmingham: Institute of Physics, 1998. . Acesso em: 05 nov. 2024.
APA
Zambom, L. da S., Mansano, R. D., & Furlan, R. (1998). Deposition of silicon nitride films by LPCVD assisted by high density plasma. In IVC-14, ICSS-10, NANO-5, QSA-10: abstract book. Birmingham: Institute of Physics.
NLM
Zambom L da S, Mansano RD, Furlan R. Deposition of silicon nitride films by LPCVD assisted by high density plasma. IVC-14, ICSS-10, NANO-5, QSA-10: abstract book. 1998 ;[citado 2024 nov. 05 ]
Vancouver
Zambom L da S, Mansano RD, Furlan R. Deposition of silicon nitride films by LPCVD assisted by high density plasma. IVC-14, ICSS-10, NANO-5, QSA-10: abstract book. 1998 ;[citado 2024 nov. 05 ]
Artigo de periodico
Mechanisms of surface roughness induced in silicon by fluorine containing plasmas (1997)
Mansano, Ronaldo Domingues ; Verdonck, Patrick Bernard; Maciel, Homero Santiago
Source: Vaccum. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, Homero Santiago. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas. Vaccum, v. 48, n. 7-9, p. 677-679, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0042-207x(97)00067-5. Acesso em: 05 nov. 2024.
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1997). Mechanisms of surface roughness induced in silicon by fluorine containing plasmas. Vaccum, 48( 7-9), 677-679. doi:10.1016/s0042-207x(97)00067-5
NLM
Mansano RD, Verdonck PB, Maciel HS. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas [Internet]. Vaccum. 1997 ; 48( 7-9): 677-679.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/s0042-207x(97)00067-5
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas [Internet]. Vaccum. 1997 ; 48( 7-9): 677-679.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/s0042-207x(97)00067-5

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