ReP USP - Resultado da busca

Trabalho de evento-resumo
2DEG formed by magnetic field in superlattices (2001)
Pusep, Yuri A ; Gusev, G. M.; Chiquito, A. J.; Bakarov, A. K.; Toropov, A. I.; Leite, J. R.
Source: Proceedings. Conference titles: International Conference on Defects in Semiconductors. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A et al. 2DEG formed by magnetic field in superlattices. 2001, Anais.. Giessen: Instituto de Física de São Carlos, Universidade de São Paulo, 2001. . Acesso em: 10 out. 2024.
APA
Pusep, Y. A., Gusev, G. M., Chiquito, A. J., Bakarov, A. K., Toropov, A. I., & Leite, J. R. (2001). 2DEG formed by magnetic field in superlattices. In Proceedings. Giessen: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Pusep YA, Gusev GM, Chiquito AJ, Bakarov AK, Toropov AI, Leite JR. 2DEG formed by magnetic field in superlattices. Proceedings. 2001 ;[citado 2024 out. 10 ]
Vancouver
Pusep YA, Gusev GM, Chiquito AJ, Bakarov AK, Toropov AI, Leite JR. 2DEG formed by magnetic field in superlattices. Proceedings. 2001 ;[citado 2024 out. 10 ]
Trabalho de evento-resumo
Raman probing of the wave function of collective excitations in the presence of disorder (2001)
Pusep, Yuri A ; Sokolov, S. S.; Galzerani, J C; Leite, J. R.
Source: Proceedings. Conference titles: International Conference on Defects in Semiconductors. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A et al. Raman probing of the wave function of collective excitations in the presence of disorder. 2001, Anais.. Giessen: Instituto de Física de São Carlos, Universidade de São Paulo, 2001. . Acesso em: 10 out. 2024.
APA
Pusep, Y. A., Sokolov, S. S., Galzerani, J. C., & Leite, J. R. (2001). Raman probing of the wave function of collective excitations in the presence of disorder. In Proceedings. Giessen: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Pusep YA, Sokolov SS, Galzerani JC, Leite JR. Raman probing of the wave function of collective excitations in the presence of disorder. Proceedings. 2001 ;[citado 2024 out. 10 ]
Vancouver
Pusep YA, Sokolov SS, Galzerani JC, Leite JR. Raman probing of the wave function of collective excitations in the presence of disorder. Proceedings. 2001 ;[citado 2024 out. 10 ]
Trabalho de evento
Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping (2000)
Rodrigues, S C P; Sipahi, Guilherme Matos ; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Proceedings. Conference titles: International Workshop on Nitride Semiconductors. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
RODRIGUES, S C P et al. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. 2000, Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000. . Acesso em: 10 out. 2024.
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2000). Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP.
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. Proceedings. 2000 ;[citado 2024 out. 10 ]
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. Proceedings. 2000 ;[citado 2024 out. 10 ]
Trabalho de evento
Influence of biaxial strain on thermodynamic, structural, and electronic properties on 'In IND.X' 'Ga IND.1-X'N alloys (2000)
Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Furthmüller, J; Leite, J. R.; Bechstedt, F
Source: Proceedings. Conference titles: International Workshop on Nitride Semiconductors. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
TELES, L. K. et al. Influence of biaxial strain on thermodynamic, structural, and electronic properties on 'In IND.X' 'Ga IND.1-X'N alloys. 2000, Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000. . Acesso em: 10 out. 2024.
APA
Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., Leite, J. R., & Bechstedt, F. (2000). Influence of biaxial strain on thermodynamic, structural, and electronic properties on 'In IND.X' 'Ga IND.1-X'N alloys. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP.
NLM
Teles LK, Scolfaro LMR, Furthmüller J, Leite JR, Bechstedt F. Influence of biaxial strain on thermodynamic, structural, and electronic properties on 'In IND.X' 'Ga IND.1-X'N alloys. Proceedings. 2000 ;[citado 2024 out. 10 ]
Vancouver
Teles LK, Scolfaro LMR, Furthmüller J, Leite JR, Bechstedt F. Influence of biaxial strain on thermodynamic, structural, and electronic properties on 'In IND.X' 'Ga IND.1-X'N alloys. Proceedings. 2000 ;[citado 2024 out. 10 ]
Trabalho de evento
Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy (2000)
Fernandez, J R L; Tabata, A; Chitta, V A; As, D J; Frey, T; Noriega, O C; Silva, M T O; Abramof, E; Schikora, D; Lischka, K; Leite, J. R.
Source: Proceedings. Conference titles: International Workshop on Nitride Semiconductors. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
FERNANDEZ, J R L et al. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. 2000, Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000. . Acesso em: 10 out. 2024.
APA
Fernandez, J. R. L., Tabata, A., Chitta, V. A., As, D. J., Frey, T., Noriega, O. C., et al. (2000). Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP.
NLM
Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;[citado 2024 out. 10 ]
Vancouver
Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;[citado 2024 out. 10 ]
Trabalho de evento
Band structure of holes in p-'DELTA'-doping superlattices (1994)
Sipahi, Guilherme Matos ; Enderlein, R; Scolfaro, L M R; Leite, J. R.
Source: Proceedings. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
SIPAHI, Guilherme Matos et al. Band structure of holes in p-'DELTA'-doping superlattices. 1994, Anais.. Vancouver: World Scientific, 1994. . Acesso em: 10 out. 2024.
APA
Sipahi, G. M., Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1994). Band structure of holes in p-'DELTA'-doping superlattices. In Proceedings. Vancouver: World Scientific.
NLM
Sipahi GM, Enderlein R, Scolfaro LMR, Leite JR. Band structure of holes in p-'DELTA'-doping superlattices. Proceedings. 1994 ;[citado 2024 out. 10 ]
Vancouver
Sipahi GM, Enderlein R, Scolfaro LMR, Leite JR. Band structure of holes in p-'DELTA'-doping superlattices. Proceedings. 1994 ;[citado 2024 out. 10 ]
Trabalho de evento
Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers (1993)
Mendonca, C A C; Scolfaro, L M R; Henriques, André Bohomoletz; Oliveira, J. B. B.; Plentz, F; Shibli, S M; Meneses, E A; Leite, J. R.
Source: Proceedings. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
MENDONCA, C A C et al. Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers. 1993, Anais.. Singapura: World Scientific, 1993. . Acesso em: 10 out. 2024.
APA
Mendonca, C. A. C., Scolfaro, L. M. R., Henriques, A. B., Oliveira, J. B. B., Plentz, F., Shibli, S. M., et al. (1993). Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers. In Proceedings. Singapura: World Scientific.
NLM
Mendonca CAC, Scolfaro LMR, Henriques AB, Oliveira JBB, Plentz F, Shibli SM, Meneses EA, Leite JR. Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers. Proceedings. 1993 ;[citado 2024 out. 10 ]
Vancouver
Mendonca CAC, Scolfaro LMR, Henriques AB, Oliveira JBB, Plentz F, Shibli SM, Meneses EA, Leite JR. Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers. Proceedings. 1993 ;[citado 2024 out. 10 ]
Trabalho de evento-resumo
Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon (1988)
Assali, L. V. C. ; Leite, J. R.
Source: Proceedings. Conference titles: Escola Brasileira de Fisica de Semicondutores. Unidade: IF
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ABNT
ASSALI, L. V. C. e LEITE, J. R. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 10 out. 2024.
APA
Assali, L. V. C., & Leite, J. R. (1988). Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In Proceedings. Singapore: World Scientific.
NLM
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. Proceedings. 1988 ;[citado 2024 out. 10 ]
Vancouver
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. Proceedings. 1988 ;[citado 2024 out. 10 ]
Trabalho de evento-resumo
Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy (1988)
Dal Pino Junior, A; Silva, E C F; Leite, J. R.
Source: Proceedings. Conference titles: Escola Brasileira de Fisica de Semicondutores. Unidade: IF
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ABNT
DAL PINO JUNIOR, A e SILVA, E C F e LEITE, J. R. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 10 out. 2024.
APA
Dal Pino Junior, A., Silva, E. C. F., & Leite, J. R. (1988). Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. In Proceedings. Singapore: World Scientific.
NLM
Dal Pino Junior A, Silva ECF, Leite JR. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. Proceedings. 1988 ;[citado 2024 out. 10 ]
Vancouver
Dal Pino Junior A, Silva ECF, Leite JR. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. Proceedings. 1988 ;[citado 2024 out. 10 ]
Trabalho de evento-resumo
Deep levels induced by 3d transition metal impurities in diamond (1988)
Alves, H W L; Leite, J. R.; Alves, J L A
Source: Proceedings. Conference titles: Escola Brasileira de Fisica de Semicondutores. Unidade: IF
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ABNT
ALVES, H W L e LEITE, J. R. e ALVES, J L A. Deep levels induced by 3d transition metal impurities in diamond. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 10 out. 2024.
APA
Alves, H. W. L., Leite, J. R., & Alves, J. L. A. (1988). Deep levels induced by 3d transition metal impurities in diamond. In Proceedings. Singapore: World Scientific.
NLM
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d transition metal impurities in diamond. Proceedings. 1988 ;[citado 2024 out. 10 ]
Vancouver
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d transition metal impurities in diamond. Proceedings. 1988 ;[citado 2024 out. 10 ]
Trabalho de evento
Hydrogen passivation of isolated impurities in silicon (1987)
Leite, J. R.; Assali, L. V. C.
Source: Proceedings. Conference titles: International Conference Physics Semiconductors. Unidade: IF
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ABNT
LEITE, J. R. e ASSALI, L. V. C. Hydrogen passivation of isolated impurities in silicon. 1987, Anais.. Singapore: World Scientific, 1987. . Acesso em: 10 out. 2024.
APA
Leite, J. R., & Assali, L. V. C. (1987). Hydrogen passivation of isolated impurities in silicon. In Proceedings. Singapore: World Scientific.
NLM
Leite JR, Assali LVC. Hydrogen passivation of isolated impurities in silicon. Proceedings. 1987 ;[citado 2024 out. 10 ]
Vancouver
Leite JR, Assali LVC. Hydrogen passivation of isolated impurities in silicon. Proceedings. 1987 ;[citado 2024 out. 10 ]
Trabalho de evento
Electronic structure of oxygen-related complex defects in silicon (1985)
Gomes, V M S; Leite, J. R.
Source: Proceedings. Conference titles: Brazilian School on Physics. Unidade: IF
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ABNT
GOMES, V M S e LEITE, J. R. Electronic structure of oxygen-related complex defects in silicon. 1985, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 1985. . Acesso em: 10 out. 2024.
APA
Gomes, V. M. S., & Leite, J. R. (1985). Electronic structure of oxygen-related complex defects in silicon. In Proceedings. São Paulo: Instituto de Física, Universidade de São Paulo.
NLM
Gomes VMS, Leite JR. Electronic structure of oxygen-related complex defects in silicon. Proceedings. 1985 ;[citado 2024 out. 10 ]
Vancouver
Gomes VMS, Leite JR. Electronic structure of oxygen-related complex defects in silicon. Proceedings. 1985 ;[citado 2024 out. 10 ]
Trabalho de evento
Deep-levels associated to chalcogen impurities in silicon (1985)
Leite, J. R.
Source: Proceedings. Conference titles: Brazilian School on Physics. Unidade: IF
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ABNT
LEITE, J. R. Deep-levels associated to chalcogen impurities in silicon. 1985, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 1985. . Acesso em: 10 out. 2024.
APA
Leite, J. R. (1985). Deep-levels associated to chalcogen impurities in silicon. In Proceedings. São Paulo: Instituto de Física, Universidade de São Paulo.
NLM
Leite JR. Deep-levels associated to chalcogen impurities in silicon. Proceedings. 1985 ;[citado 2024 out. 10 ]
Vancouver
Leite JR. Deep-levels associated to chalcogen impurities in silicon. Proceedings. 1985 ;[citado 2024 out. 10 ]
Trabalho de evento
Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P' (1985)
Silva, C E T G; Makiuchi, N; Leite, J. R.
Source: Proceedings. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IF
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ABNT
SILVA, C E T G e MAKIUCHI, N e LEITE, J. R. Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P'. 1985, Anais.. San Francisco: Springer, 1985. . Acesso em: 10 out. 2024.
APA
Silva, C. E. T. G., Makiuchi, N., & Leite, J. R. (1985). Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P'. In Proceedings. San Francisco: Springer.
NLM
Silva CETG, Makiuchi N, Leite JR. Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P'. Proceedings. 1985 ;[citado 2024 out. 10 ]
Vancouver
Silva CETG, Makiuchi N, Leite JR. Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P'. Proceedings. 1985 ;[citado 2024 out. 10 ]
Trabalho de evento
Current research on semiconductor physics (1985)
Leite, J. R.; Silva, C E T
Source: Proceedings. Conference titles: Brazilian School on Semiconductor Physics. Unidade: IF
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ABNT
LEITE, J. R. e SILVA, C E T. Current research on semiconductor physics. 1985, Anais.. São Paulo: Usp, 1985. . Acesso em: 10 out. 2024.
APA
Leite, J. R., & Silva, C. E. T. (1985). Current research on semiconductor physics. In Proceedings. São Paulo: Usp.
NLM
Leite JR, Silva CET. Current research on semiconductor physics. Proceedings. 1985 ;[citado 2024 out. 10 ]
Vancouver
Leite JR, Silva CET. Current research on semiconductor physics. Proceedings. 1985 ;[citado 2024 out. 10 ]
Trabalho de evento
Hydrogen passivation of shallow acceptor levels in crystalline silicon (1985)
Leite, J. R.; Assali, L. V. C.
Source: Proceedings. Conference titles: Brazilian School on Physics. Unidade: IF
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ABNT
LEITE, J. R. e ASSALI, L. V. C. Hydrogen passivation of shallow acceptor levels in crystalline silicon. 1985, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 1985. . Acesso em: 10 out. 2024.
APA
Leite, J. R., & Assali, L. V. C. (1985). Hydrogen passivation of shallow acceptor levels in crystalline silicon. In Proceedings. São Paulo: Instituto de Física, Universidade de São Paulo.
NLM
Leite JR, Assali LVC. Hydrogen passivation of shallow acceptor levels in crystalline silicon. Proceedings. 1985 ;[citado 2024 out. 10 ]
Vancouver
Leite JR, Assali LVC. Hydrogen passivation of shallow acceptor levels in crystalline silicon. Proceedings. 1985 ;[citado 2024 out. 10 ]
Trabalho de evento
Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy (1985)
Leite, J. R.; Alves, H W L; Alves, J L A
Source: Proceedings. Conference titles: Brazilian School on Physics. Unidade: IF
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ABNT
LEITE, J. R. e ALVES, H W L e ALVES, J L A. Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy. 1985, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 1985. . Acesso em: 10 out. 2024.
APA
Leite, J. R., Alves, H. W. L., & Alves, J. L. A. (1985). Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy. In Proceedings. São Paulo: Instituto de Física, Universidade de São Paulo.
NLM
Leite JR, Alves HWL, Alves JLA. Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy. Proceedings. 1985 ;[citado 2024 out. 10 ]
Vancouver
Leite JR, Alves HWL, Alves JLA. Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy. Proceedings. 1985 ;[citado 2024 out. 10 ]
Trabalho de evento
Self-consistent band structure calculations by the variational cellular method (1985)
Leite, J. R.
Source: Proceedings. Conference titles: Brazilian School on Physics. Unidade: IF
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ABNT
LEITE, J. R. Self-consistent band structure calculations by the variational cellular method. 1985, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 1985. . Acesso em: 10 out. 2024.
APA
Leite, J. R. (1985). Self-consistent band structure calculations by the variational cellular method. In Proceedings. São Paulo: Instituto de Física, Universidade de São Paulo.
NLM
Leite JR. Self-consistent band structure calculations by the variational cellular method. Proceedings. 1985 ;[citado 2024 out. 10 ]
Vancouver
Leite JR. Self-consistent band structure calculations by the variational cellular method. Proceedings. 1985 ;[citado 2024 out. 10 ]

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