Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping

Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping (2000)

Authors:
USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
Unidade: IF
Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
Language: Inglês
Imprenta:
- Publisher: The Institute of Pure and Applied Physics-IPAP
- Publisher place: Tokyo
- Date published: 2000
Source:
- Título do periódico: Proceedings
Conference titles: International Workshop on Nitride Semiconductors

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ABNT

RODRIGUES, S C P; SIPAHI, Guilherme Matos; SCOLFARO, Luisa Maria Ribeiro; LEITE, J. R. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000.
APA

Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2000). Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP.
NLM

Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. Proceedings. 2000 ;
Vancouver

Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. Proceedings. 2000 ;