Influence of biaxial strain on thermodynamic, structural, and electronic properties on 'In IND.X' 'Ga IND.1-X'N alloys (2000)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- School: IF
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: The Institute of Pure and Applied Physics-IPAP
- Place of publication: Tokyo
- Date published: 2000
- Source:
- Título do periódico: Proceedings
- Conference title: International Workshop on Nitride Semiconductors
-
ABNT
TELES, L. K.; SCOLFARO, Luisa Maria Ribeiro; FURTHMÜLLER, J; LEITE, J. R.; BECHSTEDT, F. Influence of biaxial strain on thermodynamic, structural, and electronic properties on 'In IND.X' 'Ga IND.1-X'N alloys. Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000. -
APA
Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., Leite, J. R., & Bechstedt, F. (2000). Influence of biaxial strain on thermodynamic, structural, and electronic properties on 'In IND.X' 'Ga IND.1-X'N alloys. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP. -
NLM
Teles LK, Scolfaro LMR, Furthmüller J, Leite JR, Bechstedt F. Influence of biaxial strain on thermodynamic, structural, and electronic properties on 'In IND.X' 'Ga IND.1-X'N alloys. Proceedings. 2000 ; -
Vancouver
Teles LK, Scolfaro LMR, Furthmüller J, Leite JR, Bechstedt F. Influence of biaxial strain on thermodynamic, structural, and electronic properties on 'In IND.X' 'Ga IND.1-X'N alloys. Proceedings. 2000 ; - Strained-induced shifts of the zone-center phonons of III-nitrides
- First principles studies of Indium clustering in AlGaInN alloys
- Phase separation and ordering in group-III nitride alloys
- Stability of native defects in cubic boron nitride
- Propriedades estruturais e eletrônicas do GaN em fases cúbica e hexagonal
- Estudo teórico de primeiros princípios de massas efetivas em ligas semicondutoras
- Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.X' 'Ga IND.1-X' N/GaN superlattices
- Níveis de energia de poços quânticos parabólicos submetidos a campos magnéticos in-plane
- Condutividade eletrica de super-redes com dopagem tipo delta paralela a direcao de crescimento
- Comparative studies of photoluminescence from n-and p-'GAMA'-doping wells in 'GA''AS'
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