Raman probing of the wave function of collective excitations in the presence of disorder (2001)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Proceedings
- Conference titles: International Conference on Defects in Semiconductors
-
ABNT
PUSEP, Yuri A et al. Raman probing of the wave function of collective excitations in the presence of disorder. 2001, Anais.. Giessen: Instituto de Física de São Carlos, Universidade de São Paulo, 2001. . Acesso em: 09 fev. 2026. -
APA
Pusep, Y. A., Sokolov, S. S., Galzerani, J. C., & Leite, J. R. (2001). Raman probing of the wave function of collective excitations in the presence of disorder. In Proceedings. Giessen: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Pusep YA, Sokolov SS, Galzerani JC, Leite JR. Raman probing of the wave function of collective excitations in the presence of disorder. Proceedings. 2001 ;[citado 2026 fev. 09 ] -
Vancouver
Pusep YA, Sokolov SS, Galzerani JC, Leite JR. Raman probing of the wave function of collective excitations in the presence of disorder. Proceedings. 2001 ;[citado 2026 fev. 09 ] - Interface roughness in InGaAs/InP heterostructures
- Localization in random electron systems: 'Al IND. x''Ga IND. 1-x'As alloys and intentionally disordered GaAs/'Al IND. x''Ga IND. 1-x'As superlattices
- Study of localized states in the valence band tail in intentionally disordered multi-layer system embedded in wide AlGaAs parabolic well
- Delocalization-localization transition of plasmons in disordered superlattices
- Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells
- The Scientific World Journal: condensed matter physics
- The Scientific World Journal: Condensed Matter Physics
- Estudo de super-redes InGaAs/InP / AlGaAs altamente dopadas e intencionalmente desordenadas
- Delocalization-localization transition of plasmons in random '(GaAs) IND.m''('Al IND.0.3''Ga IND.0.7''As) IND.6' superlattices
- Miniband effects in short‐period InGaAs/InP superlattices
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
