Hydrogen passivation of shallow acceptor levels in crystalline silicon (1985)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Source:
- Título do periódico: Proceedings
- Conference titles: Brazilian School on Physics
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ABNT
LEITE, J. R. e ASSALI, L. V. C. Hydrogen passivation of shallow acceptor levels in crystalline silicon. 1985, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 1985. . Acesso em: 28 set. 2024. -
APA
Leite, J. R., & Assali, L. V. C. (1985). Hydrogen passivation of shallow acceptor levels in crystalline silicon. In Proceedings. São Paulo: Instituto de Física, Universidade de São Paulo. -
NLM
Leite JR, Assali LVC. Hydrogen passivation of shallow acceptor levels in crystalline silicon. Proceedings. 1985 ;[citado 2024 set. 28 ] -
Vancouver
Leite JR, Assali LVC. Hydrogen passivation of shallow acceptor levels in crystalline silicon. Proceedings. 1985 ;[citado 2024 set. 28 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
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