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Artigo de periodico
Backside contact effect on the morphological and optical features of porous silicon photonic crystals (2009)
Huanca, Danilo Roque ; Raimundo, Daniel Scodeler; Salcedo, Walter Jaimes
Source: Microelectronics Journal. Unidade: EP
Subjects: NANOTECNOLOGIA, MICROELETRÔNICA, ELETROQUÍMICA
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ABNT
HUANCA, Danilo Roque e RAIMUNDO, Daniel Scodeler e SALCEDO, Walter Jaimes. Backside contact effect on the morphological and optical features of porous silicon photonic crystals. Microelectronics Journal, v. 40, n. 4-5, p. 744-748, 2009Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2008.11.005. Acesso em: 25 out. 2025.
APA
Huanca, D. R., Raimundo, D. S., & Salcedo, W. J. (2009). Backside contact effect on the morphological and optical features of porous silicon photonic crystals. Microelectronics Journal, 40( 4-5), 744-748. doi:10.1016/j.mejo.2008.11.005
NLM
Huanca DR, Raimundo DS, Salcedo WJ. Backside contact effect on the morphological and optical features of porous silicon photonic crystals [Internet]. Microelectronics Journal. 2009 ; 40( 4-5): 744-748.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2008.11.005
Vancouver
Huanca DR, Raimundo DS, Salcedo WJ. Backside contact effect on the morphological and optical features of porous silicon photonic crystals [Internet]. Microelectronics Journal. 2009 ; 40( 4-5): 744-748.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2008.11.005
Artigo de periodico
Structural and optical properties on thulium-doped LHPG-grown 'Ta IND.2''O IND. 5' fibres (2009)
Macatrão, M.; Peres, M.; Rubinger, Carla Patricia Lacerda; Soares, M. J.; Costa, L. C.; Costa, F. M.; Monteiro, T.; Franco, N.; Alves, E.; Saggioro, Bruno Zaniboni; Andreeta, Marcello Rubens Barsi ; Hernandes, Antônio Carlos
Source: Microelectronics Journal. Unidade: IFSC
Subjects: CRESCIMENTO DE CRISTAIS, FIBRAS (ESTUDO), TÂNTALO, TERRAS RARAS
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ABNT
MACATRÃO, M. et al. Structural and optical properties on thulium-doped LHPG-grown 'Ta IND.2''O IND. 5' fibres. Microelectronics Journal, v. 40, n. 2, p. 309-312, 2009Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2008.07.033. Acesso em: 25 out. 2025.
APA
Macatrão, M., Peres, M., Rubinger, C. P. L., Soares, M. J., Costa, L. C., Costa, F. M., et al. (2009). Structural and optical properties on thulium-doped LHPG-grown 'Ta IND.2''O IND. 5' fibres. Microelectronics Journal, 40( 2), 309-312. doi:10.1016/j.mejo.2008.07.033
NLM
Macatrão M, Peres M, Rubinger CPL, Soares MJ, Costa LC, Costa FM, Monteiro T, Franco N, Alves E, Saggioro BZ, Andreeta MRB, Hernandes AC. Structural and optical properties on thulium-doped LHPG-grown 'Ta IND.2''O IND. 5' fibres [Internet]. Microelectronics Journal. 2009 ; 40( 2): 309-312.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2008.07.033
Vancouver
Macatrão M, Peres M, Rubinger CPL, Soares MJ, Costa LC, Costa FM, Monteiro T, Franco N, Alves E, Saggioro BZ, Andreeta MRB, Hernandes AC. Structural and optical properties on thulium-doped LHPG-grown 'Ta IND.2''O IND. 5' fibres [Internet]. Microelectronics Journal. 2009 ; 40( 2): 309-312.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2008.07.033
Artigo de periodico
Anodic porous alumina structural characteristics study based on SEM image processing and analysis (2009)
Raimundo, Daniel Scodeler; Calíope, Priscila Braga; Huanca, Danilo Roque ; Salcedo, Walter Jaimes
Source: Microelectronics Journal. Unidade: EP
Subjects: NANOTECNOLOGIA, MICROELETRÔNICA
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ABNT
RAIMUNDO, Daniel Scodeler et al. Anodic porous alumina structural characteristics study based on SEM image processing and analysis. Microelectronics Journal, v. 40, n. 4-5, p. 844-847, 2009Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2008.11.024. Acesso em: 25 out. 2025.
APA
Raimundo, D. S., Calíope, P. B., Huanca, D. R., & Salcedo, W. J. (2009). Anodic porous alumina structural characteristics study based on SEM image processing and analysis. Microelectronics Journal, 40( 4-5), 844-847. doi:10.1016/j.mejo.2008.11.024
NLM
Raimundo DS, Calíope PB, Huanca DR, Salcedo WJ. Anodic porous alumina structural characteristics study based on SEM image processing and analysis [Internet]. Microelectronics Journal. 2009 ; 40( 4-5): 844-847.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2008.11.024
Vancouver
Raimundo DS, Calíope PB, Huanca DR, Salcedo WJ. Anodic porous alumina structural characteristics study based on SEM image processing and analysis [Internet]. Microelectronics Journal. 2009 ; 40( 4-5): 844-847.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2008.11.024
Artigo de periodico
Hardness and structure characterization of Ti6Al4V films produced by reactive magnetron sputtering on a conventional austenitic stainless steel (2008)
Garzon, Carlos Mario; Alfonso Jose E; Corredor, Edna C; Recco, Abel André Cândido ; Tschiptschin, André Paulo
Source: Microelectronics Journal. Unidade: EP
Subjects: TITÂNIO, LIGAS NÃO FERROSAS
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ABNT
GARZON, Carlos Mario et al. Hardness and structure characterization of Ti6Al4V films produced by reactive magnetron sputtering on a conventional austenitic stainless steel. Microelectronics Journal, v. 39, p. 1329-1330, 2008Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2008.01.047. Acesso em: 25 out. 2025.
APA
Garzon, C. M., Alfonso Jose E,, Corredor, E. C., Recco, A. A. C., & Tschiptschin, A. P. (2008). Hardness and structure characterization of Ti6Al4V films produced by reactive magnetron sputtering on a conventional austenitic stainless steel. Microelectronics Journal, 39, 1329-1330. doi:10.1016/j.mejo.2008.01.047
NLM
Garzon CM, Alfonso Jose E, Corredor EC, Recco AAC, Tschiptschin AP. Hardness and structure characterization of Ti6Al4V films produced by reactive magnetron sputtering on a conventional austenitic stainless steel [Internet]. Microelectronics Journal. 2008 ; 39 1329-1330.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2008.01.047
Vancouver
Garzon CM, Alfonso Jose E, Corredor EC, Recco AAC, Tschiptschin AP. Hardness and structure characterization of Ti6Al4V films produced by reactive magnetron sputtering on a conventional austenitic stainless steel [Internet]. Microelectronics Journal. 2008 ; 39 1329-1330.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2008.01.047
Artigo de periodico
Roughness and nanoholes in sol-gel thin films (2005)
Antunes, A; Amaral, T; Brito, Giancarlo Esposito de Souza; Abramof, E; Morelhao, Sergio Luiz
Source: Microelectronics Journal. Unidade: IF
Subjects: MICROELETRÔNICA, FILMES FINOS
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ABNT
ANTUNES, A et al. Roughness and nanoholes in sol-gel thin films. Microelectronics Journal, v. 36, n. 3-6, p. 567-569, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2005.02.078. Acesso em: 25 out. 2025.
APA
Antunes, A., Amaral, T., Brito, G. E. de S., Abramof, E., & Morelhao, S. L. (2005). Roughness and nanoholes in sol-gel thin films. Microelectronics Journal, 36( 3-6), 567-569. doi:10.1016/j.mejo.2005.02.078
NLM
Antunes A, Amaral T, Brito GE de S, Abramof E, Morelhao SL. Roughness and nanoholes in sol-gel thin films [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 567-569.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.078
Vancouver
Antunes A, Amaral T, Brito GE de S, Abramof E, Morelhao SL. Roughness and nanoholes in sol-gel thin films [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 567-569.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.078
Artigo de periodico
Negative charged excitons in double barrier diodes (2005)
Camps, I.; Vercik, Andrés; Galvão Gobato, Y.; Brasil, Maria J. S. P.; Marques, G. E.; Makler, Susana S.
Source: Microelectronics Journal. Unidade: FZEA
Subjects: MICROELETRÔNICA, DISPOSITIVOS ELETRÔNICOS, DIODOS
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ABNT
CAMPS, I. et al. Negative charged excitons in double barrier diodes. Microelectronics Journal, v. no 2005, n. 11, p. 1038-1040, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2005.04.013. Acesso em: 25 out. 2025.
APA
Camps, I., Vercik, A., Galvão Gobato, Y., Brasil, M. J. S. P., Marques, G. E., & Makler, S. S. (2005). Negative charged excitons in double barrier diodes. Microelectronics Journal, no 2005( 11), 1038-1040. doi:10.1016/j.mejo.2005.04.013
NLM
Camps I, Vercik A, Galvão Gobato Y, Brasil MJSP, Marques GE, Makler SS. Negative charged excitons in double barrier diodes [Internet]. Microelectronics Journal. 2005 ; no 2005( 11): 1038-1040.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2005.04.013
Vancouver
Camps I, Vercik A, Galvão Gobato Y, Brasil MJSP, Marques GE, Makler SS. Negative charged excitons in double barrier diodes [Internet]. Microelectronics Journal. 2005 ; no 2005( 11): 1038-1040.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2005.04.013
Artigo de periodico
Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 (2005)
Monte, A F G; Cunha, J F R; Soler, M A P; Silva, S W; Quivy, A. A.; Morais, P C
Source: Microelectronics Journal. Unidade: IF
Subjects: MICROELETRÔNICA, DISPOSITIVOS ELETRÔNICOS, NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, ESTRUTURA ELETRÔNICA
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ABNT
MONTE, A F G et al. Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3. Microelectronics Journal, v. 36, n. 3-6, p. 194-196, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2005.02.003. Acesso em: 25 out. 2025.
APA
Monte, A. F. G., Cunha, J. F. R., Soler, M. A. P., Silva, S. W., Quivy, A. A., & Morais, P. C. (2005). Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3. Microelectronics Journal, 36( 3-6), 194-196. doi:10.1016/j.mejo.2005.02.003
NLM
Monte AFG, Cunha JFR, Soler MAP, Silva SW, Quivy AA, Morais PC. Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 194-196.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.003
Vancouver
Monte AFG, Cunha JFR, Soler MAP, Silva SW, Quivy AA, Morais PC. Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 194-196.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.003
Artigo de periodico
Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning (2005)
Morelhão, Sérgio Luiz; Avanci, L H; Freitas, R; Quivy, A. A.
Source: Microelectronics Journal. Unidade: IF
Subjects: MICROELETRÔNICA, DISPOSITIVOS ELETRÔNICOS, DIFRAÇÃO POR RAIOS X, NANOTECNOLOGIA
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ABNT
MORELHÃO, Sérgio Luiz et al. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning. Microelectronics Journal, v. 36, n. 3-6, p. 219-222, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2005.02.010. Acesso em: 25 out. 2025.
APA
Morelhão, S. L., Avanci, L. H., Freitas, R., & Quivy, A. A. (2005). Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning. Microelectronics Journal, 36( 3-6), 219-222. doi:10.1016/j.mejo.2005.02.010
NLM
Morelhão SL, Avanci LH, Freitas R, Quivy AA. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 219-222.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.010
Vancouver
Morelhão SL, Avanci LH, Freitas R, Quivy AA. Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray renninger scanning [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 219-222.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.010
Artigo de periodico
Near band-edge optical properties of cubic GaN with and without carbon doping (2004)
Fernandez, J R L; Cerdeira, F; Meneses, E A; Soares, J A N T; Noriega, O C; Leite, J. R.; As, D J; Salazar, D G P; Schikora, D; Lischka, K
Source: Microelectronics Journal. Unidade: IF
Subjects: MATÉRIA CONDENSADA, FILMES FINOS, FOTOLUMINESCÊNCIA
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ABNT
FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN with and without carbon doping. Microelectronics Journal, 2004Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00226-x. Acesso em: 25 out. 2025.
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Soares, J. A. N. T., Noriega, O. C., Leite, J. R., et al. (2004). Near band-edge optical properties of cubic GaN with and without carbon doping. Microelectronics Journal. doi:10.1016/s0026-2692(03)00226-x
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Noriega OC, Leite JR, As DJ, Salazar DGP, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN with and without carbon doping [Internet]. Microelectronics Journal. 2004 ;[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00226-x
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Noriega OC, Leite JR, As DJ, Salazar DGP, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN with and without carbon doping [Internet]. Microelectronics Journal. 2004 ;[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00226-x
Artigo de periodico
Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys (2004)
Teles, L K; Marques, M; Ferreira, L G; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DISPOSITIVOS ÓPTICOS, DISPOSITIVOS ELETRÔNICOS, TERMODINÂMICA
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ABNT
TELES, L K et al. Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys. Microelectronics Journal, 2004Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00218-0. Acesso em: 25 out. 2025.
APA
Teles, L. K., Marques, M., Ferreira, L. G., Scolfaro, L. M. R., & Leite, J. R. (2004). Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys. Microelectronics Journal. doi:10.1016/s0026-2692(03)00218-0
NLM
Teles LK, Marques M, Ferreira LG, Scolfaro LMR, Leite JR. Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys [Internet]. Microelectronics Journal. 2004 ;[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00218-0
Vancouver
Teles LK, Marques M, Ferreira LG, Scolfaro LMR, Leite JR. Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys [Internet]. Microelectronics Journal. 2004 ;[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00218-0
Artigo de periodico
Atomic and electronic structures of 'In IND.X' 'Ga IND.1-X' N quantum dots (2003)
Oliveira, C de; Alves, J L A; Alves, H W L; Nogueira, R A; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, ESTRUTURA ATÔMICA (FÍSICA MODERNA)
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ABNT
OLIVEIRA, C de et al. Atomic and electronic structures of 'In IND.X' 'Ga IND.1-X' N quantum dots. Microelectronics Journal, v. 34, n. 5-8, p. 725-727, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1. Acesso em: 25 out. 2025.
APA
Oliveira, C. de, Alves, J. L. A., Alves, H. W. L., Nogueira, R. A., & Leite, J. R. (2003). Atomic and electronic structures of 'In IND.X' 'Ga IND.1-X' N quantum dots. Microelectronics Journal, 34( 5-8), 725-727. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
NLM
Oliveira C de, Alves JLA, Alves HWL, Nogueira RA, Leite JR. Atomic and electronic structures of 'In IND.X' 'Ga IND.1-X' N quantum dots [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 725-727.[citado 2025 out. 25 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
Vancouver
Oliveira C de, Alves JLA, Alves HWL, Nogueira RA, Leite JR. Atomic and electronic structures of 'In IND.X' 'Ga IND.1-X' N quantum dots [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 725-727.[citado 2025 out. 25 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
Artigo de periodico
Dynamical and thermodynamic properties of III-nitrides (2003)
Pereira, L S; Santos, A M; Alves, J L A; Alves, H W L; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Subjects: TERMODINÂMICA, CALOR ESPECÍFICO
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ABNT
PEREIRA, L S et al. Dynamical and thermodynamic properties of III-nitrides. Microelectronics Journal, v. 34, n. 5-8, p. 655-657, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00088-0. Acesso em: 25 out. 2025.
APA
Pereira, L. S., Santos, A. M., Alves, J. L. A., Alves, H. W. L., & Leite, J. R. (2003). Dynamical and thermodynamic properties of III-nitrides. Microelectronics Journal, 34( 5-8), 655-657. doi:10.1016/s0026-2692(03)00088-0
NLM
Pereira LS, Santos AM, Alves JLA, Alves HWL, Leite JR. Dynamical and thermodynamic properties of III-nitrides [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 655-657.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00088-0
Vancouver
Pereira LS, Santos AM, Alves JLA, Alves HWL, Leite JR. Dynamical and thermodynamic properties of III-nitrides [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 655-657.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00088-0
Artigo de periodico
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm (2003)
Silva, M J da; Martini, S; Lamas, T. E.; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
SILVA, M J da et al. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, v. 34, n. 5-8, p. 631-633, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00066-1. Acesso em: 25 out. 2025.
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, 34( 5-8), 631-633. doi:10.1016/s0026-2692(03)00066-1
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1
Artigo de periodico
Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well (2003)
Sérgio, C. S.; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Leite, J. R.; Estibals, O; Portal, J C
Source: Microelectronics Journal. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTIVIDADE
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ABNT
SÉRGIO, C. S. et al. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well. Microelectronics Journal, v. 34, n. 5-8, p. 763-766, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1. Acesso em: 25 out. 2025.
APA
Sérgio, C. S., Gusev, G. M., Quivy, A. A., Lamas, T. E., Leite, J. R., Estibals, O., & Portal, J. C. (2003). Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well. Microelectronics Journal, 34( 5-8), 763-766. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
NLM
Sérgio CS, Gusev GM, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 763-766.[citado 2025 out. 25 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
Vancouver
Sérgio CS, Gusev GM, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 763-766.[citado 2025 out. 25 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
Artigo de periodico
Confined excitons in 'Si/SrTiO IND.3' quantum wells (2003)
Pereira, T A S; Freire, J A K; Freire, V N; Farias, G A; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Silva Junior, E F da
Source: Microelectronics Journal. Unidade: IF
Subjects: LUMINESCÊNCIA, FILMES FINOS, ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PEREIRA, T A S et al. Confined excitons in 'Si/SrTiO IND.3' quantum wells. Microelectronics Journal, v. 34, p. 507-509, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1. Acesso em: 25 out. 2025.
APA
Pereira, T. A. S., Freire, J. A. K., Freire, V. N., Farias, G. A., Scolfaro, L. M. R., Leite, J. R., & Silva Junior, E. F. da. (2003). Confined excitons in 'Si/SrTiO IND.3' quantum wells. Microelectronics Journal, 34, 507-509. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
NLM
Pereira TAS, Freire JAK, Freire VN, Farias GA, Scolfaro LMR, Leite JR, Silva Junior EF da. Confined excitons in 'Si/SrTiO IND.3' quantum wells [Internet]. Microelectronics Journal. 2003 ; 34 507-509.[citado 2025 out. 25 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
Vancouver
Pereira TAS, Freire JAK, Freire VN, Farias GA, Scolfaro LMR, Leite JR, Silva Junior EF da. Confined excitons in 'Si/SrTiO IND.3' quantum wells [Internet]. Microelectronics Journal. 2003 ; 34 507-509.[citado 2025 out. 25 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
Artigo de periodico
High density plasma chemical vapor deposition of diamond-like carbon films (2003)
Mousinho, Ana Paula; Mansano, Ronaldo Domingues ; Massi, Marcos; Zambom, Luís da Silva
Source: Microelectronics Journal. Unidade: EP
Assunto: PLASMA (MICROELETRÔNICA)
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ABNT
MOUSINHO, Ana Paula et al. High density plasma chemical vapor deposition of diamond-like carbon films. Microelectronics Journal, v. 34, n. 5-8, p. 627-629, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00065-x. Acesso em: 25 out. 2025.
APA
Mousinho, A. P., Mansano, R. D., Massi, M., & Zambom, L. da S. (2003). High density plasma chemical vapor deposition of diamond-like carbon films. Microelectronics Journal, 34( 5-8), 627-629. doi:10.1016/s0026-2692(03)00065-x
NLM
Mousinho AP, Mansano RD, Massi M, Zambom L da S. High density plasma chemical vapor deposition of diamond-like carbon films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 627-629.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00065-x
Vancouver
Mousinho AP, Mansano RD, Massi M, Zambom L da S. High density plasma chemical vapor deposition of diamond-like carbon films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 627-629.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00065-x
Artigo de periodico
The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films (2003)
Guerino, M.; Massi, Marcos; Maciel, Homero Santiago; Otani, C.; Mansano, Ronaldo Domingues
Source: Microelectronics Journal. Unidade: EP
Assunto: PLASMA (MICROELETRÔNICA)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUERINO, M. et al. The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films. Microelectronics Journal, v. 34, n. 5-8, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00079-x. Acesso em: 25 out. 2025.
APA
Guerino, M., Massi, M., Maciel, H. S., Otani, C., & Mansano, R. D. (2003). The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films. Microelectronics Journal, 34( 5-8). doi:10.1016/s0026-2692(03)00079-x
NLM
Guerino M, Massi M, Maciel HS, Otani C, Mansano RD. The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8):[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00079-x
Vancouver
Guerino M, Massi M, Maciel HS, Otani C, Mansano RD. The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8):[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00079-x
Artigo de periodico
Correlation energy of coupled double electron layers (2003)
Candido, L.; Hai, Guo-Qiang
Source: Microelectronics Journal. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CANDIDO, L. e HAI, Guo-Qiang. Correlation energy of coupled double electron layers. Microelectronics Journal, v. 34, n. 5/8, p. 569-570, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00050-8. Acesso em: 25 out. 2025.
APA
Candido, L., & Hai, G. -Q. (2003). Correlation energy of coupled double electron layers. Microelectronics Journal, 34( 5/8), 569-570. doi:10.1016/s0026-2692(03)00050-8
NLM
Candido L, Hai G-Q. Correlation energy of coupled double electron layers [Internet]. Microelectronics Journal. 2003 ; 34( 5/8): 569-570.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00050-8
Vancouver
Candido L, Hai G-Q. Correlation energy of coupled double electron layers [Internet]. Microelectronics Journal. 2003 ; 34( 5/8): 569-570.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00050-8
Artigo de periodico
Coupled rate equation modeling of self-assembled quantum dot photoluminescence (2003)
Sales, F V de; Cruz, J M R; Silva, S W da; Soler, M A G; Morais, P C; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SALES, F V de et al. Coupled rate equation modeling of self-assembled quantum dot photoluminescence. Microelectronics Journal, v. 34, n. 5-8, p. 705-707, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00107-1. Acesso em: 25 out. 2025.
APA
Sales, F. V. de, Cruz, J. M. R., Silva, S. W. da, Soler, M. A. G., Morais, P. C., Silva, M. J. da, et al. (2003). Coupled rate equation modeling of self-assembled quantum dot photoluminescence. Microelectronics Journal, 34( 5-8), 705-707. doi:10.1016/s0026-2692(03)00107-1
NLM
Sales FV de, Cruz JMR, Silva SW da, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Coupled rate equation modeling of self-assembled quantum dot photoluminescence [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 705-707.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00107-1
Vancouver
Sales FV de, Cruz JMR, Silva SW da, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Coupled rate equation modeling of self-assembled quantum dot photoluminescence [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 705-707.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(03)00107-1
Artigo de periodico
Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si (2002)
Araujo, C. Moyses; Fernandez, J. R. L.; Silva, A. Ferreira da; Pepe, I.; Leite, J. R.; Sernelius, Bo E.; Tabata, A.; Persson, C.; Ahuja, R.; As, D. J.; Schikora, D.; Lischka, K.
Source: Microelectronics Journal. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ARAUJO, C. Moyses et al. Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si. Microelectronics Journal, v. 33, n. 4, p. 365-369, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(01)00133-1. Acesso em: 25 out. 2025.
APA
Araujo, C. M., Fernandez, J. R. L., Silva, A. F. da, Pepe, I., Leite, J. R., Sernelius, B. E., et al. (2002). Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si. Microelectronics Journal, 33( 4), 365-369. doi:10.1016/s0026-2692(01)00133-1
NLM
Araujo CM, Fernandez JRL, Silva AF da, Pepe I, Leite JR, Sernelius BE, Tabata A, Persson C, Ahuja R, As DJ, Schikora D, Lischka K. Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si [Internet]. Microelectronics Journal. 2002 ; 33( 4): 365-369.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(01)00133-1
Vancouver
Araujo CM, Fernandez JRL, Silva AF da, Pepe I, Leite JR, Sernelius BE, Tabata A, Persson C, Ahuja R, As DJ, Schikora D, Lischka K. Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si [Internet]. Microelectronics Journal. 2002 ; 33( 4): 365-369.[citado 2025 out. 25 ] Available from: https://doi.org/10.1016/s0026-2692(01)00133-1

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