Correlation energy of coupled double electron layers (2003)
- Authors:
- Autor USP: GUOQIANG, HAI - IFSC
- Unidade: IFSC
- DOI: 10.1016/s0026-2692(03)00050-8
- Assunto: FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Advanced Technology
- Publisher place: Oxford
- Date published: 2003
- Source:
- Título do periódico: Microelectronics Journal
- ISSN: 0026-2692
- Volume/Número/Paginação/Ano: v. 34, n. 5/8, p. 569-570, May/Aug. 2003
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
CANDIDO, L.; HAI, Guo-Qiang. Correlation energy of coupled double electron layers. Microelectronics Journal, Oxford, Elsevier Advanced Technology, v. 34, n. 5/8, p. 569-570, 2003. DOI: 10.1016/s0026-2692(03)00050-8. -
APA
Candido, L., & Hai, G. -Q. (2003). Correlation energy of coupled double electron layers. Microelectronics Journal, 34( 5/8), 569-570. doi:10.1016/s0026-2692(03)00050-8 -
NLM
Candido L, Hai G-Q. Correlation energy of coupled double electron layers. Microelectronics Journal. 2003 ; 34( 5/8): 569-570. -
Vancouver
Candido L, Hai G-Q. Correlation energy of coupled double electron layers. Microelectronics Journal. 2003 ; 34( 5/8): 569-570. - Quantum Monte Carlo study on the structures and energetics of cyclic and linear carbon clusters Cn (n = 1,...,10)
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- Electron mobility in multisubband 2D system determined by exact impurity scattering rate
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- Two-dimensional electron states bound to an off-plane donor in a magnetic field
- Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene
Informações sobre o DOI: 10.1016/s0026-2692(03)00050-8 (Fonte: oaDOI API)
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