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Artigo de periodico
Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate (2006)
Pacheco-Salazar, D G; Leite, J. R.; Cerdeira, F; Meneses, E A; Li, S F; As, D J; Lischka, K
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESPALHAMENTO
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ABNT
PACHECO-SALAZAR, D G et al. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, v. 21, n. 7, p. 846-851, 2006Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/21/7/003. Acesso em: 31 out. 2024.
APA
Pacheco-Salazar, D. G., Leite, J. R., Cerdeira, F., Meneses, E. A., Li, S. F., As, D. J., & Lischka, K. (2006). Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, 21( 7), 846-851. doi:10.1088/0268-1242/21/7/003
NLM
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2024 out. 31 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Vancouver
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2024 out. 31 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Artigo de periodico
Growth and characterization of cubic (2005)
Pacheco-Salazar, D G; Li, S F; Cerdeira, F; Meneses, E A; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro; As, D J; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: CRISTALOGRAFIA, DIFRAÇÃO POR RAIOS X
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ABNT
PACHECO-SALAZAR, D G et al. Growth and characterization of cubic. Journal of Crystal Growth, v. 284, n. 3-4, p. 379-387, 2005Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20. Acesso em: 31 out. 2024.
APA
Pacheco-Salazar, D. G., Li, S. F., Cerdeira, F., Meneses, E. A., Leite, J. R., Scolfaro, L. M. R., et al. (2005). Growth and characterization of cubic. Journal of Crystal Growth, 284( 3-4), 379-387. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
NLM
Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K. Growth and characterization of cubic [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 out. 31 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Vancouver
Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K. Growth and characterization of cubic [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 out. 31 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Artigo de periodico
Near band-edge optical properties of cubic GaN with and without carbon doping (2004)
Fernandez, J R L; Cerdeira, F; Meneses, E A; Soares, J A N T; Noriega, O C; Leite, J. R.; As, D J; Salazar, D G P; Schikora, D; Lischka, K
Source: Microelectronics Journal. Unidade: IF
Subjects: MATÉRIA CONDENSADA, FILMES FINOS, FOTOLUMINESCÊNCIA
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ABNT
FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN with and without carbon doping. Microelectronics Journal, 2004Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00226-x. Acesso em: 31 out. 2024.
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Soares, J. A. N. T., Noriega, O. C., Leite, J. R., et al. (2004). Near band-edge optical properties of cubic GaN with and without carbon doping. Microelectronics Journal. doi:10.1016/s0026-2692(03)00226-x
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Noriega OC, Leite JR, As DJ, Salazar DGP, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN with and without carbon doping [Internet]. Microelectronics Journal. 2004 ;[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0026-2692(03)00226-x
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Noriega OC, Leite JR, As DJ, Salazar DGP, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN with and without carbon doping [Internet]. Microelectronics Journal. 2004 ;[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0026-2692(03)00226-x
Trabalho de evento-resumo
Optical properties of cubic GaN with and without carbon doping (2003)
Fernandez, J R L; Cerdeira, F; Meneses, E A; Soares, J A N T; Santos, A M; Noriega, Odille Cue; Leite, J. R.; As, Donat Joseph; Köhler, U; Salazar, D G P; Schikora, D; Lischka, K
Source: Programa e Livro de Resumos. Conference titles: Encontro da Sociedade Brasileira de Pesquisa em Materiais. Unidade: IF
Subjects: MATERIAIS, MATÉRIA CONDENSADA, DIFRAÇÃO POR RAIOS X, FILMES FINOS
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ABNT
FERNANDEZ, J R L et al. Optical properties of cubic GaN with and without carbon doping. 2003, Anais.. Rio de Janeiro: SBPMat, 2003. . Acesso em: 31 out. 2024.
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Soares, J. A. N. T., Santos, A. M., Noriega, O. C., et al. (2003). Optical properties of cubic GaN with and without carbon doping. In Programa e Livro de Resumos. Rio de Janeiro: SBPMat.
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Salazar DGP, Schikora D, Lischka K. Optical properties of cubic GaN with and without carbon doping. Programa e Livro de Resumos. 2003 ;[citado 2024 out. 31 ]
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Salazar DGP, Schikora D, Lischka K. Optical properties of cubic GaN with and without carbon doping. Programa e Livro de Resumos. 2003 ;[citado 2024 out. 31 ]
Trabalho de evento-resumo
Optical properties of cubic GaN and InGaN of different doping levels (2003)
Fernandez, J R L; Cerdeira, F; Meneses, E A; Soares, J A N T; Santos, A M; Noriega, Odille Cue; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Meeting on Applied Physics. Unidade: IF
Subjects: FÍSICA, ESTRUTURA ELETRÔNICA, MATÉRIA CONDENSADA
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ABNT
FERNANDEZ, J R L et al. Optical properties of cubic GaN and InGaN of different doping levels. 2003, Anais.. Badajoz: APHYS, 2003. . Acesso em: 31 out. 2024.
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Soares, J. A. N. T., Santos, A. M., Noriega, O. C., & Leite, J. R. (2003). Optical properties of cubic GaN and InGaN of different doping levels. In Book of Abstracts. Badajoz: APHYS.
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Santos AM, Noriega OC, Leite JR. Optical properties of cubic GaN and InGaN of different doping levels. Book of Abstracts. 2003 ;[citado 2024 out. 31 ]
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Santos AM, Noriega OC, Leite JR. Optical properties of cubic GaN and InGaN of different doping levels. Book of Abstracts. 2003 ;[citado 2024 out. 31 ]
Artigo de periodico
Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN (2003)
Fernandez, J R L; Cerdeira, F; Meneses, E A; Brasil, M J S P; Soares, J A N; Santos, A M; Noriega, O C; Leite, J. R.; As, D J; Köhler, U; Potthast, S; Pacheco Salazar, D G
Source: Physical Review B. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, MATERIAIS
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ABNT
FERNANDEZ, J R L et al. Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN. Physical Review B, 2003Tradução . . Disponível em: https://doi.org/10.1103/physrevb.68.155204. Acesso em: 31 out. 2024.
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Brasil, M. J. S. P., Soares, J. A. N., Santos, A. M., et al. (2003). Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN. Physical Review B. doi:10.1103/physrevb.68.155204
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Brasil MJSP, Soares JAN, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Potthast S, Pacheco Salazar DG. Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN [Internet]. Physical Review B. 2003 ;[citado 2024 out. 31 ] Available from: https://doi.org/10.1103/physrevb.68.155204
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Brasil MJSP, Soares JAN, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Potthast S, Pacheco Salazar DG. Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN [Internet]. Physical Review B. 2003 ;[citado 2024 out. 31 ] Available from: https://doi.org/10.1103/physrevb.68.155204
Trabalho de evento-resumo
Optical properties of cubic GaN with and without carbon doping (2003)
Fernandez, J R L; Cerdeira, F; Meneses, E A; Brasil, M J S P; Soares, J A N T; Santos, A M; Noriega, O C; Leite, J. R.; As, D J; Köhler, U; Salazar, D G P; Schikora, D; Lischka, K
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada 26. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
FERNANDEZ, J R L et al. Optical properties of cubic GaN with and without carbon doping. 2003, Anais.. São Paulo: SBF, 2003. . Acesso em: 31 out. 2024.
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Brasil, M. J. S. P., Soares, J. A. N. T., Santos, A. M., et al. (2003). Optical properties of cubic GaN with and without carbon doping. In Resumos. São Paulo: SBF.
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Brasil MJSP, Soares JANT, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Salazar DGP, Schikora D, Lischka K. Optical properties of cubic GaN with and without carbon doping. Resumos. 2003 ;[citado 2024 out. 31 ]
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Brasil MJSP, Soares JANT, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Salazar DGP, Schikora D, Lischka K. Optical properties of cubic GaN with and without carbon doping. Resumos. 2003 ;[citado 2024 out. 31 ]
Trabalho de evento-resumo
Near band-edge optical properties of cubic GaN (2003)
Fernandez, J R L; Noriega, O C; Soares, J A N T; Tabata, A; Rodrigues, S C P; Cerdeira, F; Meneses, E A; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; As, Donat Joseph; Lischka, K
Source: Book of Abstract. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
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ABNT
FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 31 out. 2024.
APA
Fernandez, J. R. L., Noriega, O. C., Soares, J. A. N. T., Tabata, A., Rodrigues, S. C. P., Cerdeira, F., et al. (2003). Near band-edge optical properties of cubic GaN. In Book of Abstract. Fortaleza: DF/UFC.
NLM
Fernandez JRL, Noriega OC, Soares JANT, Tabata A, Rodrigues SCP, Cerdeira F, Meneses EA, Scolfaro LMR, Leite JR, As DJ, Lischka K. Near band-edge optical properties of cubic GaN. Book of Abstract. 2003 ;[citado 2024 out. 31 ]
Vancouver
Fernandez JRL, Noriega OC, Soares JANT, Tabata A, Rodrigues SCP, Cerdeira F, Meneses EA, Scolfaro LMR, Leite JR, As DJ, Lischka K. Near band-edge optical properties of cubic GaN. Book of Abstract. 2003 ;[citado 2024 out. 31 ]
Artigo de periodico
Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells (2003)
Cavalheiro, A; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; Takahashi, E K; Martini, S; Silva, M J da; Meneses, E A; Leite, J. R.
Source: Journal of Physics: Condensed Matter. Unidade: IF
Assunto: SUPERCONDUTIVIDADE
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ABNT
CAVALHEIRO, A et al. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells. Journal of Physics: Condensed Matter, v. 15, n. 2, p. 121-132, 2003Tradução . . Disponível em: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf. Acesso em: 31 out. 2024.
APA
Cavalheiro, A., Silva, E. C. F. da, Quivy, A. A., Takahashi, E. K., Martini, S., Silva, M. J. da, et al. (2003). Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells. Journal of Physics: Condensed Matter, 15( 2), 121-132. Recuperado de http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf
NLM
Cavalheiro A, Silva ECF da, Quivy AA, Takahashi EK, Martini S, Silva MJ da, Meneses EA, Leite JR. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells [Internet]. Journal of Physics: Condensed Matter. 2003 ; 15( 2): 121-132.[citado 2024 out. 31 ] Available from: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf
Vancouver
Cavalheiro A, Silva ECF da, Quivy AA, Takahashi EK, Martini S, Silva MJ da, Meneses EA, Leite JR. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells [Internet]. Journal of Physics: Condensed Matter. 2003 ; 15( 2): 121-132.[citado 2024 out. 31 ] Available from: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf
Artigo de periodico
Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates (2003)
Noriega, O C; Tabata, A; Soares, J A N T; Rodrigues, S C P; Leite, J. R.; Ribeiro, E; Fernandez, J R L; Meneses, E A; Cerdeira, F; As, D J; Schikora, D; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
NORIEGA, O C et al. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth, v. 252, n. 1-3, p. 208-212, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(02)02517-4. Acesso em: 31 out. 2024.
APA
Noriega, O. C., Tabata, A., Soares, J. A. N. T., Rodrigues, S. C. P., Leite, J. R., Ribeiro, E., et al. (2003). Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth, 252( 1-3), 208-212. doi:10.1016/s0022-0248(02)02517-4
NLM
Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates [Internet]. Journal of Crystal Growth. 2003 ; 252( 1-3): 208-212.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0022-0248(02)02517-4
Vancouver
Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates [Internet]. Journal of Crystal Growth. 2003 ; 252( 1-3): 208-212.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0022-0248(02)02517-4
Artigo de periodico
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots (2003)
Duarte, C A; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; Silva, M J da; Martini, S; Leite, J. R.; Meneses, E A; Lauretto, E
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIFRAÇÃO POR RAIOS X, ÓPTICA, FOTOLUMINESCÊNCIA
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ABNT
DUARTE, C A et al. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, v. 93, n. 10, p. 6279-6283, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1568538. Acesso em: 31 out. 2024.
APA
Duarte, C. A., Silva, E. C. F. da, Quivy, A. A., Silva, M. J. da, Martini, S., Leite, J. R., et al. (2003). Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, 93( 10), 6279-6283. doi:10.1063/1.1568538
NLM
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.1568538
Vancouver
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.1568538
Artigo de periodico
Near band-edge optical properties of cubic GaN (2003)
Fernandez, J R L; Noriega, O C; Soares, J A N T; Cerdeira, F; Meneses, E A; Leite, J. R.; As, D J; Schikora, D; Lischka, K
Source: Solid State Communications. Unidade: IF
Subjects: FILMES FINOS, ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN. Solid State Communications, v. 125, n. 3-4, p. 205-208, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(02)00768-8. Acesso em: 31 out. 2024.
APA
Fernandez, J. R. L., Noriega, O. C., Soares, J. A. N. T., Cerdeira, F., Meneses, E. A., Leite, J. R., et al. (2003). Near band-edge optical properties of cubic GaN. Solid State Communications, 125( 3-4), 205-208. doi:10.1016/s0038-1098(02)00768-8
NLM
Fernandez JRL, Noriega OC, Soares JANT, Cerdeira F, Meneses EA, Leite JR, As DJ, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN [Internet]. Solid State Communications. 2003 ; 125( 3-4): 205-208.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0038-1098(02)00768-8
Vancouver
Fernandez JRL, Noriega OC, Soares JANT, Cerdeira F, Meneses EA, Leite JR, As DJ, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN [Internet]. Solid State Communications. 2003 ; 125( 3-4): 205-208.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0038-1098(02)00768-8
Artigo de periodico
Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells (2002)
Laureto, E; Meneses, E A; Carvalho Junior, W; Bernussi, A A; Ribeiro, E; Silva, Euzi Conceicao Fernandes da; Oliveira, J B B de
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
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ABNT
LAURETO, E et al. Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells. Brazilian Journal of Physics, v. 32, n. 2A, p. 314-317, 2002Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332002000200017. Acesso em: 31 out. 2024.
APA
Laureto, E., Meneses, E. A., Carvalho Junior, W., Bernussi, A. A., Ribeiro, E., Silva, E. C. F. da, & Oliveira, J. B. B. de. (2002). Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells. Brazilian Journal of Physics, 32( 2A), 314-317. doi:10.1590/s0103-97332002000200017
NLM
Laureto E, Meneses EA, Carvalho Junior W, Bernussi AA, Ribeiro E, Silva ECF da, Oliveira JBB de. Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 314-317.[citado 2024 out. 31 ] Available from: https://doi.org/10.1590/s0103-97332002000200017
Vancouver
Laureto E, Meneses EA, Carvalho Junior W, Bernussi AA, Ribeiro E, Silva ECF da, Oliveira JBB de. Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 314-317.[citado 2024 out. 31 ] Available from: https://doi.org/10.1590/s0103-97332002000200017
Artigo de periodico
Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well (2002)
Cavalheiro, A; Silva, Euzi Conceicao Fernandes da; Takahashi, E K; Quivy, A. A.; Leite, J. R.; Meneses, E A
Source: Physical Review B. Unidade: IF
Subjects: EFEITO MOSSBAUER, FOTOLUMINESCÊNCIA
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ABNT
CAVALHEIRO, A et al. Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well. Physical Review B, v. 65, n. 7, p. 75320/1-75320/7, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips. Acesso em: 31 out. 2024.
APA
Cavalheiro, A., Silva, E. C. F. da, Takahashi, E. K., Quivy, A. A., Leite, J. R., & Meneses, E. A. (2002). Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well. Physical Review B, 65( 7), 75320/1-75320/7. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips
NLM
Cavalheiro A, Silva ECF da, Takahashi EK, Quivy AA, Leite JR, Meneses EA. Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well [Internet]. Physical Review B. 2002 ; 65( 7): 75320/1-75320/7.[citado 2024 out. 31 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips
Vancouver
Cavalheiro A, Silva ECF da, Takahashi EK, Quivy AA, Leite JR, Meneses EA. Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well [Internet]. Physical Review B. 2002 ; 65( 7): 75320/1-75320/7.[citado 2024 out. 31 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000065000007075320000001&idtype=cvips
Artigo de periodico
Temperature dependence of excitonic transitions in 'Al IND.X''Ga IND.1-X'As/GaAs quantum wells (2001)
Lourenço, S A; Dias, I F L; Duarte, J L; Laureto, E; Iwamoto, H; Meneses, E A; Leite, J. R.
Source: Superlattices and Microstructures. Unidade: IF
Subjects: SEMICONDUTORES, INTERAÇÕES NUCLEARES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LOURENÇO, S A et al. Temperature dependence of excitonic transitions in 'Al IND.X''Ga IND.1-X'As/GaAs quantum wells. Superlattices and Microstructures, v. 29, n. 2, p. 225-231, 2001Tradução . . Disponível em: http://www.idealibrary.com/links/doi/10.1006/spmi.2000.0959/pdf. Acesso em: 31 out. 2024.
APA
Lourenço, S. A., Dias, I. F. L., Duarte, J. L., Laureto, E., Iwamoto, H., Meneses, E. A., & Leite, J. R. (2001). Temperature dependence of excitonic transitions in 'Al IND.X''Ga IND.1-X'As/GaAs quantum wells. Superlattices and Microstructures, 29( 2), 225-231. Recuperado de http://www.idealibrary.com/links/doi/10.1006/spmi.2000.0959/pdf
NLM
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Iwamoto H, Meneses EA, Leite JR. Temperature dependence of excitonic transitions in 'Al IND.X''Ga IND.1-X'As/GaAs quantum wells [Internet]. Superlattices and Microstructures. 2001 ; 29( 2): 225-231.[citado 2024 out. 31 ] Available from: http://www.idealibrary.com/links/doi/10.1006/spmi.2000.0959/pdf
Vancouver
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Iwamoto H, Meneses EA, Leite JR. Temperature dependence of excitonic transitions in 'Al IND.X''Ga IND.1-X'As/GaAs quantum wells [Internet]. Superlattices and Microstructures. 2001 ; 29( 2): 225-231.[citado 2024 out. 31 ] Available from: http://www.idealibrary.com/links/doi/10.1006/spmi.2000.0959/pdf
Trabalho de evento-resumo
Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells (2001)
Noriega, Odille Cue; Tabata, Americo; Chitta, V A; Sotomayor, N M; Fernandez, J R L; Leite, J. R.; Meneses, E A; Ribeiro, E; As, D J; Schikora, D; Lischka, K
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Subjects: MATERIAIS MAGNÉTICOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NORIEGA, Odille Cue et al. Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 31 out. 2024.
APA
Noriega, O. C., Tabata, A., Chitta, V. A., Sotomayor, N. M., Fernandez, J. R. L., Leite, J. R., et al. (2001). Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells. In Resumos. São Paulo: SBF.
NLM
Noriega OC, Tabata A, Chitta VA, Sotomayor NM, Fernandez JRL, Leite JR, Meneses EA, Ribeiro E, As DJ, Schikora D, Lischka K. Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells. Resumos. 2001 ;[citado 2024 out. 31 ]
Vancouver
Noriega OC, Tabata A, Chitta VA, Sotomayor NM, Fernandez JRL, Leite JR, Meneses EA, Ribeiro E, As DJ, Schikora D, Lischka K. Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells. Resumos. 2001 ;[citado 2024 out. 31 ]
Artigo de periodico
Influence of Al content on temperature dependence of excitonic transitions in quantum wells (2001)
Lourenco, S A; Dias, I. F. L.; Laureto, E; Duarte, J L; Toguinho Filho, D O; Meneses, E A; Leite, J. R.
Source: European Physical Journal B. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LOURENCO, S A et al. Influence of Al content on temperature dependence of excitonic transitions in quantum wells. European Physical Journal B, v. 21, n. 1, p. 11-17, 2001Tradução . . Disponível em: http://link.springer.de/link/service/journals/10051/papers/1021001/10210011.pdf. Acesso em: 31 out. 2024.
APA
Lourenco, S. A., Dias, I. F. L., Laureto, E., Duarte, J. L., Toguinho Filho, D. O., Meneses, E. A., & Leite, J. R. (2001). Influence of Al content on temperature dependence of excitonic transitions in quantum wells. European Physical Journal B, 21( 1), 11-17. Recuperado de http://link.springer.de/link/service/journals/10051/papers/1021001/10210011.pdf
NLM
Lourenco SA, Dias IFL, Laureto E, Duarte JL, Toguinho Filho DO, Meneses EA, Leite JR. Influence of Al content on temperature dependence of excitonic transitions in quantum wells [Internet]. European Physical Journal B. 2001 ; 21( 1): 11-17.[citado 2024 out. 31 ] Available from: http://link.springer.de/link/service/journals/10051/papers/1021001/10210011.pdf
Vancouver
Lourenco SA, Dias IFL, Laureto E, Duarte JL, Toguinho Filho DO, Meneses EA, Leite JR. Influence of Al content on temperature dependence of excitonic transitions in quantum wells [Internet]. European Physical Journal B. 2001 ; 21( 1): 11-17.[citado 2024 out. 31 ] Available from: http://link.springer.de/link/service/journals/10051/papers/1021001/10210011.pdf
Artigo de periodico
Temperature dependence of optical transitions in AlGaAs (2001)
Lourenço, S A; Dias, I F L; Duarte, J L; Laureto, E; Meneses, E A; Leite, J. R.; Mazzaro, I
Source: Journal of Applied Physics. Unidade: IF
Subjects: FOTOLUMINESCÊNCIA, ÓPTICA, SEMICONDUTORES, DIELÉTRICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LOURENÇO, S A et al. Temperature dependence of optical transitions in AlGaAs. Journal of Applied Physics, v. 89, n. 11, p. 6159-6164, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1367875. Acesso em: 31 out. 2024.
APA
Lourenço, S. A., Dias, I. F. L., Duarte, J. L., Laureto, E., Meneses, E. A., Leite, J. R., & Mazzaro, I. (2001). Temperature dependence of optical transitions in AlGaAs. Journal of Applied Physics, 89( 11), 6159-6164. doi:10.1063/1.1367875
NLM
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Meneses EA, Leite JR, Mazzaro I. Temperature dependence of optical transitions in AlGaAs [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6159-6164.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.1367875
Vancouver
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Meneses EA, Leite JR, Mazzaro I. Temperature dependence of optical transitions in AlGaAs [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6159-6164.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.1367875
Artigo de periodico
Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers (2000)
Frizzarini, M; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; cavalheiro, A; Leite, J. R.; Meneses, E A
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FRIZZARINI, M et al. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers. Physical Review B, v. 61, n. 20, p. 13923-13928, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips. Acesso em: 31 out. 2024.
APA
Frizzarini, M., Silva, E. C. F. da, Quivy, A. A., cavalheiro, A., Leite, J. R., & Meneses, E. A. (2000). Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers. Physical Review B, 61( 20), 13923-13928. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips
NLM
Frizzarini M, Silva ECF da, Quivy AA, cavalheiro A, Leite JR, Meneses EA. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers [Internet]. Physical Review B. 2000 ; 61( 20): 13923-13928.[citado 2024 out. 31 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips
Vancouver
Frizzarini M, Silva ECF da, Quivy AA, cavalheiro A, Leite JR, Meneses EA. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers [Internet]. Physical Review B. 2000 ; 61( 20): 13923-13928.[citado 2024 out. 31 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips
Trabalho de evento-resumo
New results in photoluminescence-excitation measurements from Be single delta-doped GaAs layers (1997)
Levine, A; Silva, Euzi Conceição Fernandes da; Dias, I. F. L.; Lauretto, D; Oliveira, J. B. B.; Meneses, E A; Oliveira, A. G.
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEVINE, A et al. New results in photoluminescence-excitation measurements from Be single delta-doped GaAs layers. 1997, Anais.. São Paulo: Sociedade Brasileira de Física, 1997. . Acesso em: 31 out. 2024.
APA
Levine, A., Silva, E. C. F. da, Dias, I. F. L., Lauretto, D., Oliveira, J. B. B., Meneses, E. A., & Oliveira, A. G. (1997). New results in photoluminescence-excitation measurements from Be single delta-doped GaAs layers. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Levine A, Silva ECF da, Dias IFL, Lauretto D, Oliveira JBB, Meneses EA, Oliveira AG. New results in photoluminescence-excitation measurements from Be single delta-doped GaAs layers. Resumos. 1997 ;[citado 2024 out. 31 ]
Vancouver
Levine A, Silva ECF da, Dias IFL, Lauretto D, Oliveira JBB, Meneses EA, Oliveira AG. New results in photoluminescence-excitation measurements from Be single delta-doped GaAs layers. Resumos. 1997 ;[citado 2024 out. 31 ]

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