Optical properties of cubic GaN and InGaN of different doping levels (2003)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: FÍSICA; ESTRUTURA ELETRÔNICA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Book of Abstracts
- Conference titles: International Meeting on Applied Physics
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ABNT
FERNANDEZ, J R L; CERDEIRA, F; MENESES, E A; et al. Optical properties of cubic GaN and InGaN of different doping levels. Anais.. Badajoz: APHYS, 2003. -
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Soares, J. A. N. T., Santos, A. M., Noriega, O. C., & Leite, J. R. (2003). Optical properties of cubic GaN and InGaN of different doping levels. In Book of Abstracts. Badajoz: APHYS. -
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Santos AM, Noriega OC, Leite JR. Optical properties of cubic GaN and InGaN of different doping levels. Book of Abstracts. 2003 ; -
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Santos AM, Noriega OC, Leite JR. Optical properties of cubic GaN and InGaN of different doping levels. Book of Abstracts. 2003 ; - Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
- Native surface defects at low-index reconstructed cubic GaN surfaces
- Investigation of the real semiconductor laser structure by photoreflectance method
- Evidência da formação de fase minoritária com alto teor de In em crescimento MBE de 'In IND. X''Ga IND. 1-X'N
- Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy
- Elementary excitations of 2D gated electron gas
- Photoluminescence of cubic GaN/GaAs (100) grown by RF-MBE
- Raman spectroscopy of n-GaN in cubic phase
- Current research on semiconductor physics
- Estrutura eletronica do semicondutor diamante tipo p
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