ReP USP - Resultado da busca

Artigo de periodico
Study of ISFET for KCl sensing (2024)
Duarte, Pedro Henrique; Rangel, Ricardo Cardoso; Sasaki, Kátia Regina Akemi ; Martino, João Antonio
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, PERÓXIDO DE HIDROGÊNIO, SENSORES BIOMÉDICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DUARTE, Pedro Henrique et al. Study of ISFET for KCl sensing. Solid State Electronics, v. 219, p. 1-5, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2024.108974. Acesso em: 02 set. 2024.
APA
Duarte, P. H., Rangel, R. C., Sasaki, K. R. A., & Martino, J. A. (2024). Study of ISFET for KCl sensing. Solid State Electronics, 219, 1-5. doi:10.1016/j.sse.2024.108974
NLM
Duarte PH, Rangel RC, Sasaki KRA, Martino JA. Study of ISFET for KCl sensing [Internet]. Solid State Electronics. 2024 ; 219 1-5.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.sse.2024.108974
Vancouver
Duarte PH, Rangel RC, Sasaki KRA, Martino JA. Study of ISFET for KCl sensing [Internet]. Solid State Electronics. 2024 ; 219 1-5.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.sse.2024.108974
Artigo de periodico
An enzymatic glucose biosensor using the BESOI MOSFET (2024)
Yojo, Leonardo Shimizu; Rangel, R C; Duarte, Pedro Henrique; Sasaki, Kátia Regina Akemi ; Martino, João Antonio
Source: Solid State Electronics. Unidade: EP
Subjects: GLICOSE, DRENAGEM, TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
YOJO, Leonardo Shimizu et al. An enzymatic glucose biosensor using the BESOI MOSFET. Solid State Electronics, v. 211, n. Ja 2024, p. 1-6, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108830. Acesso em: 02 set. 2024.
APA
Yojo, L. S., Rangel, R. C., Duarte, P. H., Sasaki, K. R. A., & Martino, J. A. (2024). An enzymatic glucose biosensor using the BESOI MOSFET. Solid State Electronics, 211( Ja 2024), 1-6. doi:10.1016/j.sse.2023.108830
NLM
Yojo LS, Rangel RC, Duarte PH, Sasaki KRA, Martino JA. An enzymatic glucose biosensor using the BESOI MOSFET [Internet]. Solid State Electronics. 2024 ;211( Ja 2024): 1-6.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.sse.2023.108830
Vancouver
Yojo LS, Rangel RC, Duarte PH, Sasaki KRA, Martino JA. An enzymatic glucose biosensor using the BESOI MOSFET [Internet]. Solid State Electronics. 2024 ;211( Ja 2024): 1-6.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.sse.2023.108830
Artigo de periodico
The Brazilian COVID-19 vaccination campaign: a modelling analysis of sociodemographic factors on uptake (2024)
Li, Sabrina L. ; Prete Junior, Carlos Augusto ; Zarebski, Alexander E . ; Santos, Andreza Aruska de Souza ; Sabino, Ester Cerdeira ; Nascimento, Vítor Heloiz ; Wu, Chieh-Hsi ; Messina, Jane P
Source: BMJ Open. Unidades: EP, FM
Subjects: CAMPANHAS DE VACINAÇÃO, COVID-19, DESIGUALDADES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LI, Sabrina L. et al. The Brazilian COVID-19 vaccination campaign: a modelling analysis of sociodemographic factors on uptake. BMJ Open, v. 14, n. 1, p. 1-9, 2024Tradução . . Disponível em: https://doi.org/10.1136/bmjopen-2023-076354. Acesso em: 02 set. 2024.
APA
Li, S. L., Prete Junior, C. A., Zarebski, A. E. ., Santos, A. A. de S., Sabino, E. C., Nascimento, V. H., et al. (2024). The Brazilian COVID-19 vaccination campaign: a modelling analysis of sociodemographic factors on uptake. BMJ Open, 14( 1), 1-9. doi:10.1136/bmjopen-2023-076354
NLM
Li SL, Prete Junior CA, Zarebski AE ., Santos AA de S, Sabino EC, Nascimento VH, Wu C-H, Messina JP. The Brazilian COVID-19 vaccination campaign: a modelling analysis of sociodemographic factors on uptake [Internet]. BMJ Open. 2024 ; 14( 1): 1-9.[citado 2024 set. 02 ] Available from: https://doi.org/10.1136/bmjopen-2023-076354
Vancouver
Li SL, Prete Junior CA, Zarebski AE ., Santos AA de S, Sabino EC, Nascimento VH, Wu C-H, Messina JP. The Brazilian COVID-19 vaccination campaign: a modelling analysis of sociodemographic factors on uptake [Internet]. BMJ Open. 2024 ; 14( 1): 1-9.[citado 2024 set. 02 ] Available from: https://doi.org/10.1136/bmjopen-2023-076354
Artigo de periodico
Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform (2024)
Verona, Bruno Marinaro; Simionato, Eligia; Palomino, Gustavo; Aldaya, Ivan; Penchel, Rafael Abrantes; Serrano, Ariana Maria da Conceição Lacorte Caniato ; Rehder, Gustavo Pamplona
Source: IEEE Access. Unidade: EP
Subjects: WIRELESS, MICROELETRÔNICA, TELECOMUNICAÇÕES, MATRIZES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VERONA, Bruno Marinaro et al. Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform. IEEE Access, v. 12, n. Ja 2024, p. 22132-22143, 2024Tradução . . Disponível em: https://doi.org/10.1109/ACCESS.2024.3357078. Acesso em: 02 set. 2024.
APA
Verona, B. M., Simionato, E., Palomino, G., Aldaya, I., Penchel, R. A., Serrano, A. M. da C. L. C., & Rehder, G. P. (2024). Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform. IEEE Access, 12( Ja 2024), 22132-22143. doi:10.1109/ACCESS.2024.3357078
NLM
Verona BM, Simionato E, Palomino G, Aldaya I, Penchel RA, Serrano AM da CLC, Rehder GP. Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform [Internet]. IEEE Access. 2024 ; 12( Ja 2024): 22132-22143.[citado 2024 set. 02 ] Available from: https://doi.org/10.1109/ACCESS.2024.3357078
Vancouver
Verona BM, Simionato E, Palomino G, Aldaya I, Penchel RA, Serrano AM da CLC, Rehder GP. Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform [Internet]. IEEE Access. 2024 ; 12( Ja 2024): 22132-22143.[citado 2024 set. 02 ] Available from: https://doi.org/10.1109/ACCESS.2024.3357078
Artigo de periodico
Low-cost laser for fabrication of affordable graphene-induced microband sensors (2024)
Ribeiro, Leonardo Marquez Alves; Feria, Deissy Johanna; Falcoswki, Paula Calli ; Carreño, Marcelo Nelson Paez ; Pereyra, Inés ; Bertotti, Mauro
Source: Journal of Applied Electrochemistry. Unidades: EP, IQ
Subjects: ESPECTROSCOPIA RAMAN, MICROSCOPIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RIBEIRO, Leonardo Marquez Alves et al. Low-cost laser for fabrication of affordable graphene-induced microband sensors. Journal of Applied Electrochemistry, 2024Tradução . . Disponível em: https://dx.doi.org/10.1007/s10800-024-02132-w. Acesso em: 02 set. 2024.
APA
Ribeiro, L. M. A., Feria, D. J., Falcoswki, P. C., Carreño, M. N. P., Pereyra, I., & Bertotti, M. (2024). Low-cost laser for fabrication of affordable graphene-induced microband sensors. Journal of Applied Electrochemistry. doi:10.1007/s10800-024-02132-w
NLM
Ribeiro LMA, Feria DJ, Falcoswki PC, Carreño MNP, Pereyra I, Bertotti M. Low-cost laser for fabrication of affordable graphene-induced microband sensors [Internet]. Journal of Applied Electrochemistry. 2024 ;[citado 2024 set. 02 ] Available from: https://dx.doi.org/10.1007/s10800-024-02132-w
Vancouver
Ribeiro LMA, Feria DJ, Falcoswki PC, Carreño MNP, Pereyra I, Bertotti M. Low-cost laser for fabrication of affordable graphene-induced microband sensors [Internet]. Journal of Applied Electrochemistry. 2024 ;[citado 2024 set. 02 ] Available from: https://dx.doi.org/10.1007/s10800-024-02132-w
Artigo de periodico
Polynomial adaptative synchrosqueezing fourier transform: a method to optimize multiresolution (2024)
Correia, Leonardo B; Justo Filho, João Francisco ; Angélico, Bruno Augusto
Source: Digital Signal Processing. Unidade: EP
Subjects: TRANSFORMADA DE FOURIER, PROCESSAMENTO DE SINAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CORREIA, Leonardo B e JUSTO FILHO, João Francisco e ANGÉLICO, Bruno Augusto. Polynomial adaptative synchrosqueezing fourier transform: a method to optimize multiresolution. Digital Signal Processing, v. 150, p. 1-9, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.dsp.2024.104526. Acesso em: 02 set. 2024.
APA
Correia, L. B., Justo Filho, J. F., & Angélico, B. A. (2024). Polynomial adaptative synchrosqueezing fourier transform: a method to optimize multiresolution. Digital Signal Processing, 150, 1-9. doi:10.1016/j.dsp.2024.104526
NLM
Correia LB, Justo Filho JF, Angélico BA. Polynomial adaptative synchrosqueezing fourier transform: a method to optimize multiresolution [Internet]. Digital Signal Processing. 2024 ;150 1-9.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.dsp.2024.104526
Vancouver
Correia LB, Justo Filho JF, Angélico BA. Polynomial adaptative synchrosqueezing fourier transform: a method to optimize multiresolution [Internet]. Digital Signal Processing. 2024 ;150 1-9.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.dsp.2024.104526
Artigo de periodico
Genetic algorithm based tuning of sliding mode controllers for a boost converter of PV system using internet of things environment (2024)
Inomoto, Roberto Sussumu; Sguarezi Filho, Alfeu Joãozinho; Monteiro, José Roberto Boffino de Almeida ; Costa, Eduardo Coelho Marques da
Source: Results in Control and Optimization. Unidades: EP, EESC
Subjects: INTERNET DAS COISAS, ALGORITMOS GENÉTICOS, ENERGIA SOLAR, ENGENHARIA ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
INOMOTO, Roberto Sussumu et al. Genetic algorithm based tuning of sliding mode controllers for a boost converter of PV system using internet of things environment. Results in Control and Optimization, v. 14, p. 1-15, 2024Tradução . . Disponível em: http://dx.doi.org/10.1016/j.rico.2024.100389. Acesso em: 02 set. 2024.
APA
Inomoto, R. S., Sguarezi Filho, A. J., Monteiro, J. R. B. de A., & Costa, E. C. M. da. (2024). Genetic algorithm based tuning of sliding mode controllers for a boost converter of PV system using internet of things environment. Results in Control and Optimization, 14, 1-15. doi:10.1016/j.rico.2024.100389
NLM
Inomoto RS, Sguarezi Filho AJ, Monteiro JRB de A, Costa ECM da. Genetic algorithm based tuning of sliding mode controllers for a boost converter of PV system using internet of things environment [Internet]. Results in Control and Optimization. 2024 ; 14 1-15.[citado 2024 set. 02 ] Available from: http://dx.doi.org/10.1016/j.rico.2024.100389
Vancouver
Inomoto RS, Sguarezi Filho AJ, Monteiro JRB de A, Costa ECM da. Genetic algorithm based tuning of sliding mode controllers for a boost converter of PV system using internet of things environment [Internet]. Results in Control and Optimization. 2024 ; 14 1-15.[citado 2024 set. 02 ] Available from: http://dx.doi.org/10.1016/j.rico.2024.100389
Artigo de periodico
Estimation of the electrical parameters of overhead transmission lines using Kalman filtering with particle swarm optimization (2023)
Pereira, Ronaldo Francisco Ribeiro ; Albuquerque, Felipe Proença de ; Liboni, Luisa Helena Bartocci ; Costa, Eduardo Coelho Marques da; Monteiro, José Humberto A
Source: IET Generation, Transmission & Distribution. Unidade: EP
Subjects: ENERGIA ELÉTRICA, LINHAS DE TRANSMISSÃO DE ENERGIA ELÉTRICA, MÍNIMOS QUADRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PEREIRA, Ronaldo Francisco Ribeiro et al. Estimation of the electrical parameters of overhead transmission lines using Kalman filtering with particle swarm optimization. IET Generation, Transmission & Distribution, v. 17, p. 27-38, 2023Tradução . . Disponível em: https://doi.org/10.1049/gtd2.12661. Acesso em: 02 set. 2024.
APA
Pereira, R. F. R., Albuquerque, F. P. de, Liboni, L. H. B., Costa, E. C. M. da, & Monteiro, J. H. A. (2023). Estimation of the electrical parameters of overhead transmission lines using Kalman filtering with particle swarm optimization. IET Generation, Transmission & Distribution, 17, 27-38. doi:10.1049/gtd2.12661
NLM
Pereira RFR, Albuquerque FP de, Liboni LHB, Costa ECM da, Monteiro JHA. Estimation of the electrical parameters of overhead transmission lines using Kalman filtering with particle swarm optimization [Internet]. IET Generation, Transmission & Distribution. 2023 ;17 27-38.[citado 2024 set. 02 ] Available from: https://doi.org/10.1049/gtd2.12661
Vancouver
Pereira RFR, Albuquerque FP de, Liboni LHB, Costa ECM da, Monteiro JHA. Estimation of the electrical parameters of overhead transmission lines using Kalman filtering with particle swarm optimization [Internet]. IET Generation, Transmission & Distribution. 2023 ;17 27-38.[citado 2024 set. 02 ] Available from: https://doi.org/10.1049/gtd2.12661
Artigo de periodico
Adapting the GACT-X aligner to accelerate minimap2 in an FPGA cloud instance (2023)
Teng, Carolina; Achjian, Renan Weege; Wang, Jiang Chau ; Fonseca, Fernando Josepetti
Source: Applied Sciences. Unidades: EP, ICB
Subjects: COMPUTAÇÃO EM NUVEM, SISTEMAS HÍBRIDOS, GENÔMICA, BIOINFORMÁTICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TENG, Carolina et al. Adapting the GACT-X aligner to accelerate minimap2 in an FPGA cloud instance. Applied Sciences, v. 13, n. 7, 2023Tradução . . Disponível em: https://doi.org/10.3390/app13074385. Acesso em: 02 set. 2024.
APA
Teng, C., Achjian, R. W., Wang, J. C., & Fonseca, F. J. (2023). Adapting the GACT-X aligner to accelerate minimap2 in an FPGA cloud instance. Applied Sciences, 13( 7). doi:10.3390/app13074385
NLM
Teng C, Achjian RW, Wang JC, Fonseca FJ. Adapting the GACT-X aligner to accelerate minimap2 in an FPGA cloud instance [Internet]. Applied Sciences. 2023 ; 13( 7):[citado 2024 set. 02 ] Available from: https://doi.org/10.3390/app13074385
Vancouver
Teng C, Achjian RW, Wang JC, Fonseca FJ. Adapting the GACT-X aligner to accelerate minimap2 in an FPGA cloud instance [Internet]. Applied Sciences. 2023 ; 13( 7):[citado 2024 set. 02 ] Available from: https://doi.org/10.3390/app13074385
Artigo de periodico
Fractional-order MOS capacitor: experimental results and Monte Carlo analysis (2023)
Fernandes, Lucas Almir dos Santos; Alayo Chávez, Marco Isaías ; Martino, João Antonio
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: FRACTAIS, SIMULAÇÃO, AVALIAÇÃO DE DESEMPENHO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERNANDES, Lucas Almir dos Santos e ALAYO CHÁVEZ, Marco Isaías e MARTINO, João Antonio. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-5, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.660. Acesso em: 02 set. 2024.
APA
Fernandes, L. A. dos S., Alayo Chávez, M. I., & Martino, J. A. (2023). Fractional-order MOS capacitor: experimental results and Monte Carlo analysis. Journal of Integrated Circuits and Systems, 18( 1), 1-5. doi:10.29292/jics.v18i1.660
NLM
Fernandes LA dos S, Alayo Chávez MI, Martino JA. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-5.[citado 2024 set. 02 ] Available from: https://doi.org/10.29292/jics.v18i1.660
Vancouver
Fernandes LA dos S, Alayo Chávez MI, Martino JA. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-5.[citado 2024 set. 02 ] Available from: https://doi.org/10.29292/jics.v18i1.660
Trabalho de evento
Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs (2023)
Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, MICROELETRÔNICA, MATERIAIS NANOESTRUTURADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ARAÚJO, Gustavo Vinicius de e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302603. Acesso em: 02 set. 2024.
APA
Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302603
NLM
Araújo GV de, Martino JA, Agopian PGD. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs [Internet]. SBMicro. 2023 ;[citado 2024 set. 02 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302603
Vancouver
Araújo GV de, Martino JA, Agopian PGD. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs [Internet]. SBMicro. 2023 ;[citado 2024 set. 02 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302603
Artigo de periodico
Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies (2023)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: CIRCUITOS ANALÓGICOS, TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies. Semiconductor Science and Technology, v. 38, n. 9, p. 1-12, 2023Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aceb84. Acesso em: 02 set. 2024.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies. Semiconductor Science and Technology, 38( 9), 1-12. doi:10.1088/1361-6641/aceb84
NLM
Toledo R do N, Martino JA, Agopian PGD. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies [Internet]. Semiconductor Science and Technology. 2023 ; 38( 9): 1-12.[citado 2024 set. 02 ] Available from: https://doi.org/10.1088/1361-6641/aceb84
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies [Internet]. Semiconductor Science and Technology. 2023 ; 38( 9): 1-12.[citado 2024 set. 02 ] Available from: https://doi.org/10.1088/1361-6641/aceb84
Artigo de periodico
Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications (2023)
Silva, V C P; Martino, João Antonio ; Simoen, Eddy ; Veloso, Anabela; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, TEMPERATURA, NANOTECNOLOGIA, CIRCUITOS ANALÓGICOS, CIRCUITOS DIGITAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, V C P et al. Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications. Solid State Electronics, v. 208, p. 1-5, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108729. Acesso em: 02 set. 2024.
APA
Silva, V. C. P., Martino, J. A., Simoen, E., Veloso, A., & Agopian, P. G. D. (2023). Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications. Solid State Electronics, 208, 1-5. doi:10.1016/j.sse.2023.108729
NLM
Silva VCP, Martino JA, Simoen E, Veloso A, Agopian PGD. Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications [Internet]. Solid State Electronics. 2023 ;208 1-5.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.sse.2023.108729
Vancouver
Silva VCP, Martino JA, Simoen E, Veloso A, Agopian PGD. Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications [Internet]. Solid State Electronics. 2023 ;208 1-5.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.sse.2023.108729
Artigo de periodico
Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis (2023)
Silva, Wenita de Lima; Toledo, Rodrigo do Nascimento; Gonçalez Filho, Walter; Nogueira, Alexandro de Moraes; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, Wenita de Lima et al. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis. Solid State Electronics, v. 202, p. 1-8, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108611. Acesso em: 02 set. 2024.
APA
Silva, W. de L., Toledo, R. do N., Gonçalez Filho, W., Nogueira, A. de M., Agopian, P. G. D., & Martino, J. A. (2023). Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis. Solid State Electronics, 202, 1-8. doi:10.1016/j.sse.2023.108611
NLM
Silva W de L, Toledo R do N, Gonçalez Filho W, Nogueira A de M, Agopian PGD, Martino JA. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis [Internet]. Solid State Electronics. 2023 ; 202 1-8.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.sse.2023.108611
Vancouver
Silva W de L, Toledo R do N, Gonçalez Filho W, Nogueira A de M, Agopian PGD, Martino JA. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis [Internet]. Solid State Electronics. 2023 ; 202 1-8.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.sse.2023.108611
Artigo de periodico
Experimental study of MISHEMT from 450k down to 200 k for analog applications (2023)
Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, TEMPERATURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PERINA, Welder Fernandes et al. Experimental study of MISHEMT from 450k down to 200 k for analog applications. Solid State Electronics, v. 208, p. 1-4, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108742. Acesso em: 02 set. 2024.
APA
Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Experimental study of MISHEMT from 450k down to 200 k for analog applications. Solid State Electronics, 208, 1-4. doi:10.1016/j.sse.2023.108742
NLM
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450k down to 200 k for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.sse.2023.108742
Vancouver
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450k down to 200 k for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.sse.2023.108742
Trabalho de evento
Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET (2023)
Ramos, Daniel Augusto; Sasaki, Kátia Regina Akemi ; Rangel, Ricardo Cardoso; Duarte, Pedro Henrique; Martino, João Antonio
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RAMOS, Daniel Augusto et al. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302644. Acesso em: 02 set. 2024.
APA
Ramos, D. A., Sasaki, K. R. A., Rangel, R. C., Duarte, P. H., & Martino, J. A. (2023). Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302644
NLM
Ramos DA, Sasaki KRA, Rangel RC, Duarte PH, Martino JA. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET [Internet]. SBMicro. 2023 ;[citado 2024 set. 02 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302644
Vancouver
Ramos DA, Sasaki KRA, Rangel RC, Duarte PH, Martino JA. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET [Internet]. SBMicro. 2023 ;[citado 2024 set. 02 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302644
Trabalho de evento
Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET (2023)
Ribeiro, Arllen D.R; Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RIBEIRO, Arllen D.R et al. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302575. Acesso em: 02 set. 2024.
APA
Ribeiro, A. D. R., Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302575
NLM
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 set. 02 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575
Vancouver
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 set. 02 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575
Trabalho de evento
Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K (2023)
Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PERINA, Welder Fernandes et al. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302604. Acesso em: 02 set. 2024.
APA
Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302604
NLM
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 set. 02 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604
Vancouver
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 set. 02 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604
Trabalho de evento
MIS capacitor as portable oxygen detection sensor (2023)
Mendes, Felipe Soares; Braga, Mauro Sergio; Salcedo, Walter Jaimes ; Jaimes, Ruth Flavia Vera Villamil
Source: INSCIT. Conference titles: International Symposium on Instrumentation Systems, Circuits and Transducers. Unidade: EP
Subjects: SENSOR, FOTOLUMINESCÊNCIA, OXIGÊNIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MENDES, Felipe Soares et al. MIS capacitor as portable oxygen detection sensor. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/INSCIT59673.2023.10258486. Acesso em: 02 set. 2024.
APA
Mendes, F. S., Braga, M. S., Salcedo, W. J., & Jaimes, R. F. V. V. (2023). MIS capacitor as portable oxygen detection sensor. In INSCIT. [Piscataway, N.J.]: IEEE. doi:10.1109/INSCIT59673.2023.10258486
NLM
Mendes FS, Braga MS, Salcedo WJ, Jaimes RFVV. MIS capacitor as portable oxygen detection sensor [Internet]. INSCIT. 2023 ;[citado 2024 set. 02 ] Available from: https://doi.org/10.1109/INSCIT59673.2023.10258486
Vancouver
Mendes FS, Braga MS, Salcedo WJ, Jaimes RFVV. MIS capacitor as portable oxygen detection sensor [Internet]. INSCIT. 2023 ;[citado 2024 set. 02 ] Available from: https://doi.org/10.1109/INSCIT59673.2023.10258486
Artigo de periodico
Inverse design of distributed bragg reflector targeting a sharp reflectivity spectrum (2023)
Abe, Igor Yamamoto ; Mazzeo, Angela; Ferlauto, Andre Santarosa ; Alayo Chávez, Marco Isaías ; Melo, Emerson Gonçalves de
Source: Photonics and Nanostructures: fundamentals and applications. Unidade: EP
Subjects: COMUNICAÇÃO ÓPTICA, FOTÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ABE, Igor Yamamoto et al. Inverse design of distributed bragg reflector targeting a sharp reflectivity spectrum. Photonics and Nanostructures: fundamentals and applications, v. 57, n. Dec. 2023. Article 101183, p. 1-5, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.photonics.2023.101183. Acesso em: 02 set. 2024.
APA
Abe, I. Y., Mazzeo, A., Ferlauto, A. S., Alayo Chávez, M. I., & Melo, E. G. de. (2023). Inverse design of distributed bragg reflector targeting a sharp reflectivity spectrum. Photonics and Nanostructures: fundamentals and applications, 57( Dec. 2023. Article 101183), 1-5. doi:10.1016/j.photonics.2023.101183
NLM
Abe IY, Mazzeo A, Ferlauto AS, Alayo Chávez MI, Melo EG de. Inverse design of distributed bragg reflector targeting a sharp reflectivity spectrum [Internet]. Photonics and Nanostructures: fundamentals and applications. 2023 ;57( Dec. 2023. Article 101183): 1-5.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.photonics.2023.101183
Vancouver
Abe IY, Mazzeo A, Ferlauto AS, Alayo Chávez MI, Melo EG de. Inverse design of distributed bragg reflector targeting a sharp reflectivity spectrum [Internet]. Photonics and Nanostructures: fundamentals and applications. 2023 ;57( Dec. 2023. Article 101183): 1-5.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.photonics.2023.101183

USP Schools

ReP

Filtros

USP Schools

Departament

Authors

USP affiliated authors

Date published

Subjects

Source title

Conference titles

Countries/Territories

Funding Agencies

Indexado em

Normalized affiliation

Non normalized affiliation

Countries of institutions of collaboration